RO85809B1 - Process for making silicon magnetic diodes - Google Patents
Process for making silicon magnetic diodesInfo
- Publication number
- RO85809B1 RO85809B1 RO112417A RO11241783A RO85809B1 RO 85809 B1 RO85809 B1 RO 85809B1 RO 112417 A RO112417 A RO 112417A RO 11241783 A RO11241783 A RO 11241783A RO 85809 B1 RO85809 B1 RO 85809B1
- Authority
- RO
- Romania
- Prior art keywords
- realization
- magnetic field
- trichlorethylene
- well
- recombination
- Prior art date
Links
- 238000000034 method Methods 0.000 title abstract 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title abstract 2
- 229910052710 silicon Inorganic materials 0.000 title abstract 2
- 239000010703 silicon Substances 0.000 title abstract 2
- XSTXAVWGXDQKEL-UHFFFAOYSA-N Trichloroethylene Chemical group ClC=C(Cl)Cl XSTXAVWGXDQKEL-UHFFFAOYSA-N 0.000 abstract 2
- 230000003647 oxidation Effects 0.000 abstract 2
- 238000007254 oxidation reaction Methods 0.000 abstract 2
- 238000005215 recombination Methods 0.000 abstract 2
- 230000006798 recombination Effects 0.000 abstract 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
- 238000011109 contamination Methods 0.000 abstract 1
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 230000000694 effects Effects 0.000 abstract 1
- 238000002513 implantation Methods 0.000 abstract 1
- 238000005259 measurement Methods 0.000 abstract 1
- 230000001590 oxidative effect Effects 0.000 abstract 1
- 230000003071 parasitic effect Effects 0.000 abstract 1
- 229910052698 phosphorus Inorganic materials 0.000 abstract 1
- 239000011574 phosphorus Substances 0.000 abstract 1
- 230000035945 sensitivity Effects 0.000 abstract 1
Landscapes
- Hall/Mr Elements (AREA)
Abstract
Prezenta inventie se refra la un procedeu de realizare a magnetodiodelor planare cu siliciu, ce pot fi utilizate în aparatura de masura si control a cîmpului magnetic ca si la obtinerea unor contacte nemecanice de fiabilitate foarte mare la motoare electrice. Procedeul, conform inventiei, în scopul obtinerii unei sensibilitati, mari în cîmp magnetic, prevede oxidarea initiala la temperatura joasa în atmosfera oxidanta cu vapori de tricloretilena, implantare ionica pentru realizarea zonelor de plusare cu evitarea contaminarii din sursa lor de bor, difuzie de fosfor în mediu oxidant cu tricloretilena pentru conservarea timpuliu de viata în volum si scaderea vitezei de recombinare la suprafata, lepuirea grosiera pe spatele plachetei pentru cr esterea vitezei de recombinare a purtatorilor, în aceasta zona, realizarea contactelor de anod si catod pe aceeasi suprafata, precum si realizarea unui inel de garda în scopul scaderii efectelor de margine (strapungeri parazite).The present invention relates to a process for making planar silicon magnetodiodes, which can be used in the field of measurement and control of the magnetic field, as well as to obtain non-mechanical contacts of high reliability in electric motors. The process according to the invention in order to obtain a high sensitivity in the magnetic field provides for initial oxidation at low temperature in the oxidative atmosphere with trichlorethylene vapors, ionic implantation for the realization of the rebound zones with avoidance of contamination from their boron source, phosphorus diffusion in the oxidation medium with trichlorethylene for preserving the lifetime in volume and decreasing the recombination velocity at the surface, the coat thickness on the back of the plate for the speed of recombination of the wearers in this area, the realization of the anode and cathode contacts on the same surface as well as the realization a guard ring to reduce edge effects (parasitic straps).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| RO112417A RO85809B1 (en) | 1983-10-26 | 1983-10-26 | Process for making silicon magnetic diodes |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| RO112417A RO85809B1 (en) | 1983-10-26 | 1983-10-26 | Process for making silicon magnetic diodes |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| RO85809B1 true RO85809B1 (en) | 1985-01-31 |
Family
ID=40903557
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| RO112417A RO85809B1 (en) | 1983-10-26 | 1983-10-26 | Process for making silicon magnetic diodes |
Country Status (1)
| Country | Link |
|---|---|
| RO (1) | RO85809B1 (en) |
-
1983
- 1983-10-26 RO RO112417A patent/RO85809B1/en unknown
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