RO80938B1 - Procedeu de micsorare prin iradiere a timpului de comutatie a dispozitivelor semiconductoare cu siliciu - Google Patents
Procedeu de micsorare prin iradiere a timpului de comutatie a dispozitivelor semiconductoare cu siliciuInfo
- Publication number
- RO80938B1 RO80938B1 RO86599A RO8659976A RO80938B1 RO 80938 B1 RO80938 B1 RO 80938B1 RO 86599 A RO86599 A RO 86599A RO 8659976 A RO8659976 A RO 8659976A RO 80938 B1 RO80938 B1 RO 80938B1
- Authority
- RO
- Romania
- Prior art keywords
- irradiation
- reducing
- rad
- semiconductor devices
- switching time
- Prior art date
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title abstract 2
- 238000000034 method Methods 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 229910052710 silicon Inorganic materials 0.000 title abstract 2
- 239000010703 silicon Substances 0.000 title abstract 2
- 239000000498 cooling water Substances 0.000 abstract 1
- 230000005855 radiation Effects 0.000 abstract 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Silicon Compounds (AREA)
Abstract
Prezenta inventie se refera la un procedeu de micsorare prin iradiere cu electroni, radiatii gama si de frînare, neutroni, a timpilor de comutatiei a dispozitivelor electronice semiconductoare pe baza de siliciu, la care iradierea cu electroni s-a facut în gama de doze de 10 la puterea 4....5.10 la a 8 rad., de preferinta o rata a dozei de 2,5.10 la a 8 rad/h, iar pentru iradierile cu radiatii de frînare o rata de 5.10 la puterea 5 rad/h, suportul probelor fiind racit, temperatura apei de racire nedepasind 15 degree C, iar în cazul temperaturilor joase utilizîndu-se iradieri succesive si reveniri termice între temperaturile cuprinse între 150 si 250 degree C.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| RO7686599A RO80938A2 (ro) | 1976-06-28 | 1976-06-28 | Procedeu de micsorare prin iradiere a timpului de comutatie a dispozitivelor semiconductoare cu siliciu |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| RO7686599A RO80938A2 (ro) | 1976-06-28 | 1976-06-28 | Procedeu de micsorare prin iradiere a timpului de comutatie a dispozitivelor semiconductoare cu siliciu |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| RO80938B1 true RO80938B1 (ro) | 1983-01-30 |
| RO80938A2 RO80938A2 (ro) | 1983-02-01 |
Family
ID=20096419
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| RO7686599A RO80938A2 (ro) | 1976-06-28 | 1976-06-28 | Procedeu de micsorare prin iradiere a timpului de comutatie a dispozitivelor semiconductoare cu siliciu |
Country Status (1)
| Country | Link |
|---|---|
| RO (1) | RO80938A2 (ro) |
-
1976
- 1976-06-28 RO RO7686599A patent/RO80938A2/ro unknown
Also Published As
| Publication number | Publication date |
|---|---|
| RO80938A2 (ro) | 1983-02-01 |
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