RO102870A2 - Procedeu de realizare a structurii diodei planar-epitaxiale pentru tensiuni de strapungere mari - Google Patents
Procedeu de realizare a structurii diodei planar-epitaxiale pentru tensiuni de strapungere mariInfo
- Publication number
- RO102870A2 RO102870A2 RO138938A RO13893889A RO102870A2 RO 102870 A2 RO102870 A2 RO 102870A2 RO 138938 A RO138938 A RO 138938A RO 13893889 A RO13893889 A RO 13893889A RO 102870 A2 RO102870 A2 RO 102870A2
- Authority
- RO
- Romania
- Prior art keywords
- guard
- ring
- volume
- diffusion
- procedure
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 238000009792 diffusion process Methods 0.000 abstract 3
- 238000000034 method Methods 0.000 abstract 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 abstract 3
- 238000002513 implantation Methods 0.000 abstract 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 2
- 229920005591 polysilicon Polymers 0.000 abstract 2
- 230000005855 radiation Effects 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
- 239000007943 implant Substances 0.000 abstract 1
- 230000005693 optoelectronics Effects 0.000 abstract 1
- 238000002161 passivation Methods 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 abstract 1
- 230000010287 polarization Effects 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Landscapes
- Light Receiving Elements (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| RO138938A RO102870B1 (ro) | 1989-03-27 | 1989-03-27 | Procedeu de realizare a structurii diodei planar-epitaxiale pentru tensiuni de strapungere mari |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| RO138938A RO102870B1 (ro) | 1989-03-27 | 1989-03-27 | Procedeu de realizare a structurii diodei planar-epitaxiale pentru tensiuni de strapungere mari |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| RO102870A2 true RO102870A2 (ro) | 1991-10-08 |
| RO102870B1 RO102870B1 (ro) | 1991-12-30 |
Family
ID=20124333
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| RO138938A RO102870B1 (ro) | 1989-03-27 | 1989-03-27 | Procedeu de realizare a structurii diodei planar-epitaxiale pentru tensiuni de strapungere mari |
Country Status (1)
| Country | Link |
|---|---|
| RO (1) | RO102870B1 (ro) |
-
1989
- 1989-03-27 RO RO138938A patent/RO102870B1/ro unknown
Also Published As
| Publication number | Publication date |
|---|---|
| RO102870B1 (ro) | 1991-12-30 |
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