PT3644097T - Detetor ótico e dispositivo de deteção ótica - Google Patents
Detetor ótico e dispositivo de deteção óticaInfo
- Publication number
- PT3644097T PT3644097T PT188197362T PT18819736T PT3644097T PT 3644097 T PT3644097 T PT 3644097T PT 188197362 T PT188197362 T PT 188197362T PT 18819736 T PT18819736 T PT 18819736T PT 3644097 T PT3644097 T PT 3644097T
- Authority
- PT
- Portugal
- Prior art keywords
- optical
- detection device
- detector
- optical detection
- optical detector
- Prior art date
Links
- 230000003287 optical effect Effects 0.000 title 2
- 238000001514 detection method Methods 0.000 title 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/20—Measuring radiation intensity with scintillation detectors
- G01T1/2018—Scintillation-photodiode combinations
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/20—Measuring radiation intensity with scintillation detectors
- G01T1/208—Circuits specially adapted for scintillation detectors, e.g. for the photo-multiplier section
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
- A61B6/00—Apparatus for radiation diagnosis, e.g. combined with radiation therapy equipment
- A61B6/02—Devices for diagnosis sequentially in different planes; Stereoscopic radiation diagnosis
- A61B6/03—Computerised tomographs
- A61B6/037—Emission tomography
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/1446—Devices controlled by radiation in a repetitive configuration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14658—X-ray, gamma-ray or corpuscular radiation imagers
- H01L27/14663—Indirect radiation imagers, e.g. using luminescent members
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02016—Circuit arrangements of general character for the devices
- H01L31/02019—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02027—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier for devices working in avalanche mode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02322—Optical elements or arrangements associated with the device comprising luminescent members, e.g. fluorescent sheets upon the device
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/702—SSIS architectures characterised by non-identical, non-equidistant or non-planar pixel layout
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
- H04N25/772—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017123011A JP6938239B2 (ja) | 2017-06-23 | 2017-06-23 | 光検出器及び光検出装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
PT3644097T true PT3644097T (pt) | 2022-04-05 |
Family
ID=64737057
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PT188197362T PT3644097T (pt) | 2017-06-23 | 2018-06-19 | Detetor ótico e dispositivo de deteção ótica |
Country Status (6)
Country | Link |
---|---|
US (1) | US11194061B2 (pt) |
EP (1) | EP3644097B1 (pt) |
JP (1) | JP6938239B2 (pt) |
CN (1) | CN110785679B (pt) |
PT (1) | PT3644097T (pt) |
WO (1) | WO2018235810A1 (pt) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113037221A (zh) * | 2021-01-28 | 2021-06-25 | 明峰医疗系统股份有限公司 | 用于SiPM读出系统的共基极前置放大网络电路及其读出方法 |
Family Cites Families (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5531021B2 (pt) | 1973-11-30 | 1980-08-15 | ||
JPS5830628A (ja) * | 1981-08-15 | 1983-02-23 | Machida Oputo Giken:Kk | 温度測定方法及びその装置 |
IT1316794B1 (it) * | 2000-03-09 | 2003-05-12 | Milano Politecnico | Circuito per rilevare con elevata precisione il tempo di arrivo deifotoni incidenti su fotodiodi a valanga a singolo fotone |
JP4146647B2 (ja) * | 2002-02-13 | 2008-09-10 | 日置電機株式会社 | 単一光子の検出方法および単一光子の検出装置 |
JPWO2007043137A1 (ja) * | 2005-10-04 | 2009-04-16 | 株式会社島津製作所 | 核医学診断装置 |
JP2009025308A (ja) * | 2007-07-20 | 2009-02-05 | Siemens Ag | 放射線検出器モジュール、放射線検出器および画像化用断層撮影装置 |
GB2451678A (en) * | 2007-08-10 | 2009-02-11 | Sensl Technologies Ltd | Silicon photomultiplier circuitry for minimal onset and recovery times |
JP2010169516A (ja) | 2009-01-22 | 2010-08-05 | Tohoku Univ | 放射線検出装置および飛来放射線の消滅位置特定方法 |
US8981307B2 (en) | 2009-10-01 | 2015-03-17 | Shimadzu Corporation | Pulse height analyzer and nuclear medicine diagnosis apparatus provided with the same |
JP5644294B2 (ja) * | 2010-09-10 | 2014-12-24 | 株式会社豊田中央研究所 | 光検出器 |
JP5869293B2 (ja) * | 2011-10-19 | 2016-02-24 | 浜松ホトニクス株式会社 | 放射線検出装置 |
JP5791461B2 (ja) * | 2011-10-21 | 2015-10-07 | 浜松ホトニクス株式会社 | 光検出装置 |
JP5832852B2 (ja) * | 2011-10-21 | 2015-12-16 | 浜松ホトニクス株式会社 | 光検出装置 |
JP5963642B2 (ja) * | 2012-10-29 | 2016-08-03 | 浜松ホトニクス株式会社 | フォトダイオードアレイ |
KR102026737B1 (ko) * | 2013-01-25 | 2019-09-30 | 삼성전자주식회사 | 영상 생성 장치 및 방법 |
JP5925711B2 (ja) * | 2013-02-20 | 2016-05-25 | 浜松ホトニクス株式会社 | 検出器、pet装置及びx線ct装置 |
JP5753551B2 (ja) * | 2013-04-25 | 2015-07-22 | 日立アロカメディカル株式会社 | 放射線測定装置 |
JP6257916B2 (ja) * | 2013-04-26 | 2018-01-10 | 東芝メディカルシステムズ株式会社 | 光検出装置、放射線検出装置、放射線分析装置及び光検出方法 |
JP2014241543A (ja) * | 2013-06-12 | 2014-12-25 | 株式会社東芝 | 光検出装置およびct装置 |
JP6414830B2 (ja) * | 2014-02-28 | 2018-10-31 | 株式会社ANSeeN | 波形弁別装置、波形弁別方法及び波形弁別プログラム |
JP6352084B2 (ja) * | 2014-07-08 | 2018-07-04 | キヤノンメディカルシステムズ株式会社 | フォトンカウンティングct装置 |
JP6508343B2 (ja) * | 2015-09-04 | 2019-05-08 | 株式会社島津製作所 | 放射線検出器および検出器モジュール |
JP6602652B2 (ja) * | 2015-12-01 | 2019-11-06 | キヤノンメディカルシステムズ株式会社 | フォトンカウンティング撮像装置及びx線検出装置 |
JP6543565B2 (ja) * | 2015-12-21 | 2019-07-10 | 浜松ホトニクス株式会社 | 光電変換素子及び光電変換モジュール |
-
2017
- 2017-06-23 JP JP2017123011A patent/JP6938239B2/ja active Active
-
2018
- 2018-06-19 EP EP18819736.2A patent/EP3644097B1/en active Active
- 2018-06-19 PT PT188197362T patent/PT3644097T/pt unknown
- 2018-06-19 CN CN201880041442.7A patent/CN110785679B/zh active Active
- 2018-06-19 US US16/623,032 patent/US11194061B2/en active Active
- 2018-06-19 WO PCT/JP2018/023272 patent/WO2018235810A1/ja active Application Filing
Also Published As
Publication number | Publication date |
---|---|
EP3644097A1 (en) | 2020-04-29 |
JP2019009253A (ja) | 2019-01-17 |
EP3644097B1 (en) | 2022-03-09 |
EP3644097A4 (en) | 2020-12-16 |
JP6938239B2 (ja) | 2021-09-22 |
WO2018235810A1 (ja) | 2018-12-27 |
CN110785679A (zh) | 2020-02-11 |
US11194061B2 (en) | 2021-12-07 |
CN110785679B (zh) | 2023-11-07 |
US20210116586A1 (en) | 2021-04-22 |
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