EP3644097A4 - Optical detector and optical detection device - Google Patents

Optical detector and optical detection device Download PDF

Info

Publication number
EP3644097A4
EP3644097A4 EP18819736.2A EP18819736A EP3644097A4 EP 3644097 A4 EP3644097 A4 EP 3644097A4 EP 18819736 A EP18819736 A EP 18819736A EP 3644097 A4 EP3644097 A4 EP 3644097A4
Authority
EP
European Patent Office
Prior art keywords
optical
detection device
detector
optical detection
optical detector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP18819736.2A
Other languages
German (de)
French (fr)
Other versions
EP3644097B1 (en
EP3644097A1 (en
Inventor
Ryosuke OTA
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hamamatsu Photonics KK
Original Assignee
Hamamatsu Photonics KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hamamatsu Photonics KK filed Critical Hamamatsu Photonics KK
Publication of EP3644097A1 publication Critical patent/EP3644097A1/en
Publication of EP3644097A4 publication Critical patent/EP3644097A4/en
Application granted granted Critical
Publication of EP3644097B1 publication Critical patent/EP3644097B1/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/20—Measuring radiation intensity with scintillation detectors
    • G01T1/2018—Scintillation-photodiode combinations
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/20—Measuring radiation intensity with scintillation detectors
    • G01T1/208—Circuits specially adapted for scintillation detectors, e.g. for the photo-multiplier section
    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
    • A61B6/00—Apparatus or devices for radiation diagnosis; Apparatus or devices for radiation diagnosis combined with radiation therapy equipment
    • A61B6/02—Arrangements for diagnosis sequentially in different planes; Stereoscopic radiation diagnosis
    • A61B6/03—Computed tomography [CT]
    • A61B6/037—Emission tomography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/1446—Devices controlled by radiation in a repetitive configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14658—X-ray, gamma-ray or corpuscular radiation imagers
    • H01L27/14663—Indirect radiation imagers, e.g. using luminescent members
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/02016—Circuit arrangements of general character for the devices
    • H01L31/02019—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02027—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier for devices working in avalanche mode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H01L31/02322—Optical elements or arrangements associated with the device comprising luminescent members, e.g. fluorescent sheets upon the device
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/703—SSIS architectures incorporating pixels for producing signals other than image signals
    • H04N25/706—Pixels for exposure or ambient light measuring
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/772—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/772—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters
    • H04N25/773—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters comprising photon counting circuits, e.g. single photon detection [SPD] or single photon avalanche diodes [SPAD]

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Power Engineering (AREA)
  • Molecular Biology (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Medical Informatics (AREA)
  • Veterinary Medicine (AREA)
  • Biomedical Technology (AREA)
  • Surgery (AREA)
  • Animal Behavior & Ethology (AREA)
  • General Health & Medical Sciences (AREA)
  • Public Health (AREA)
  • Pathology (AREA)
  • Optics & Photonics (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Heart & Thoracic Surgery (AREA)
  • Biophysics (AREA)
  • Radiology & Medical Imaging (AREA)
  • Toxicology (AREA)
  • Measurement Of Radiation (AREA)
  • Light Receiving Elements (AREA)
  • Nuclear Medicine (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
EP18819736.2A 2017-06-23 2018-06-19 Optical detector and optical detection device Active EP3644097B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017123011A JP6938239B2 (en) 2017-06-23 2017-06-23 Photodetector and photodetector
PCT/JP2018/023272 WO2018235810A1 (en) 2017-06-23 2018-06-19 Optical detector and optical detection device

Publications (3)

Publication Number Publication Date
EP3644097A1 EP3644097A1 (en) 2020-04-29
EP3644097A4 true EP3644097A4 (en) 2020-12-16
EP3644097B1 EP3644097B1 (en) 2022-03-09

Family

ID=64737057

Family Applications (1)

Application Number Title Priority Date Filing Date
EP18819736.2A Active EP3644097B1 (en) 2017-06-23 2018-06-19 Optical detector and optical detection device

Country Status (6)

Country Link
US (1) US11194061B2 (en)
EP (1) EP3644097B1 (en)
JP (1) JP6938239B2 (en)
CN (1) CN110785679B (en)
PT (1) PT3644097T (en)
WO (1) WO2018235810A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113037221A (en) * 2021-01-28 2021-06-25 明峰医疗系统股份有限公司 Common base pre-amplification network circuit for SiPM reading system and reading method thereof

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017038133A1 (en) * 2015-09-04 2017-03-09 株式会社島津製作所 Radiation detector and detector module

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JPS5531021B2 (en) 1973-11-30 1980-08-15
JPS5830628A (en) * 1981-08-15 1983-02-23 Machida Oputo Giken:Kk Method and device for measuring temperature
IT1316794B1 (en) * 2000-03-09 2003-05-12 Milano Politecnico CIRCUIT FOR DETECTING WITH HIGH PRECISION THE ARRIVAL TIME OF ACCIDENT DEFOTONS ON SINGLE PHOTON AVALANCHE PHOTODIODS
JP4146647B2 (en) * 2002-02-13 2008-09-10 日置電機株式会社 Single photon detection method and single photon detection apparatus
US7709801B2 (en) * 2005-10-04 2010-05-04 Shimadzu Corporation Nuclear medicine diagnosis equipment
JP2009025308A (en) * 2007-07-20 2009-02-05 Siemens Ag Radiation detector module, radiation detector, and imaging tomographic device
GB2451678A (en) * 2007-08-10 2009-02-11 Sensl Technologies Ltd Silicon photomultiplier circuitry for minimal onset and recovery times
JP2010169516A (en) * 2009-01-22 2010-08-05 Tohoku Univ Radiation detection apparatus and method for identifying position of extinction of in-coming radiation
US8981307B2 (en) 2009-10-01 2015-03-17 Shimadzu Corporation Pulse height analyzer and nuclear medicine diagnosis apparatus provided with the same
JP5644294B2 (en) * 2010-09-10 2014-12-24 株式会社豊田中央研究所 Photodetector
JP5869293B2 (en) * 2011-10-19 2016-02-24 浜松ホトニクス株式会社 Radiation detector
JP5832852B2 (en) * 2011-10-21 2015-12-16 浜松ホトニクス株式会社 Photodetector
JP5791461B2 (en) * 2011-10-21 2015-10-07 浜松ホトニクス株式会社 Photodetector
JP5963642B2 (en) * 2012-10-29 2016-08-03 浜松ホトニクス株式会社 Photodiode array
KR102026737B1 (en) * 2013-01-25 2019-09-30 삼성전자주식회사 Apparatus and method for generating image
JP5925711B2 (en) 2013-02-20 2016-05-25 浜松ホトニクス株式会社 Detector, PET apparatus and X-ray CT apparatus
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JP6257916B2 (en) * 2013-04-26 2018-01-10 東芝メディカルシステムズ株式会社 Photodetection device, radiation detection device, radiation analysis device, and photodetection method
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US20160356897A1 (en) 2014-02-28 2016-12-08 ANSeeN, INC. Waveform discrimination device, waveform discrimination method, and waveform discrimination program
JP6352084B2 (en) 2014-07-08 2018-07-04 キヤノンメディカルシステムズ株式会社 Photon counting CT system
JP6602652B2 (en) * 2015-12-01 2019-11-06 キヤノンメディカルシステムズ株式会社 Photon counting imaging apparatus and X-ray detection apparatus
JP6543565B2 (en) 2015-12-21 2019-07-10 浜松ホトニクス株式会社 PHOTOELECTRIC CONVERSION ELEMENT AND PHOTOELECTRIC CONVERSION MODULE

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WO2017038133A1 (en) * 2015-09-04 2017-03-09 株式会社島津製作所 Radiation detector and detector module

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
ALEXANDER M GRANT ET AL: "A new dual threshold time-over-threshold circuit for fast timing in PET", PHYSICS IN MEDICINE AND BIOLOGY, INSTITUTE OF PHYSICS PUBLISHING, BRISTOL GB, vol. 59, no. 13, 3 June 2014 (2014-06-03), pages 3421 - 3430, XP020266468, ISSN: 0031-9155, [retrieved on 20140603], DOI: 10.1088/0031-9155/59/13/3421 *

Also Published As

Publication number Publication date
PT3644097T (en) 2022-04-05
EP3644097B1 (en) 2022-03-09
WO2018235810A1 (en) 2018-12-27
US20210116586A1 (en) 2021-04-22
CN110785679A (en) 2020-02-11
CN110785679B (en) 2023-11-07
JP6938239B2 (en) 2021-09-22
US11194061B2 (en) 2021-12-07
EP3644097A1 (en) 2020-04-29
JP2019009253A (en) 2019-01-17

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