PT2763398T - Utilização de um agrupamento de sensores de imagem em formação de imagens de longo alcance sincronizada por laser - Google Patents

Utilização de um agrupamento de sensores de imagem em formação de imagens de longo alcance sincronizada por laser

Info

Publication number
PT2763398T
PT2763398T PT14166529T PT14166529T PT2763398T PT 2763398 T PT2763398 T PT 2763398T PT 14166529 T PT14166529 T PT 14166529T PT 14166529 T PT14166529 T PT 14166529T PT 2763398 T PT2763398 T PT 2763398T
Authority
PT
Portugal
Prior art keywords
image sensor
sensor array
laser range
gated imaging
range gated
Prior art date
Application number
PT14166529T
Other languages
English (en)
Inventor
Willem De Groot Arjan
Jan Hof Albert
Original Assignee
Photonis Netherlands B V
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=39745456&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=PT2763398(T) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Photonis Netherlands B V filed Critical Photonis Netherlands B V
Publication of PT2763398T publication Critical patent/PT2763398T/pt

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/771—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising storage means other than floating diffusion
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
    • G01S17/88—Lidar systems specially adapted for specific applications
    • G01S17/89—Lidar systems specially adapted for specific applications for mapping or imaging
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H04N25/58—Control of the dynamic range involving two or more exposures
    • H04N25/587—Control of the dynamic range involving two or more exposures acquired sequentially, e.g. using the combination of odd and even image fields
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H04N25/59—Control of the dynamic range by controlling the amount of charge storable in the pixel, e.g. modification of the charge conversion ratio of the floating node capacitance
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Physics & Mathematics (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Remote Sensing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
PT14166529T 2007-12-21 2007-12-21 Utilização de um agrupamento de sensores de imagem em formação de imagens de longo alcance sincronizada por laser PT2763398T (pt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
PCT/NL2007/000330 WO2009082193A1 (en) 2007-12-21 2007-12-21 An image sensor array, an intensified image sensor array, an electron bombarded image sensor array device as well as a pixel sensor element for use in such an image sensor array
EP14166529.9A EP2763398B1 (en) 2007-12-21 2007-12-21 Use of an image sensor array in laser range gated imaging

Publications (1)

Publication Number Publication Date
PT2763398T true PT2763398T (pt) 2019-02-06

Family

ID=39745456

Family Applications (1)

Application Number Title Priority Date Filing Date
PT14166529T PT2763398T (pt) 2007-12-21 2007-12-21 Utilização de um agrupamento de sensores de imagem em formação de imagens de longo alcance sincronizada por laser

Country Status (11)

Country Link
US (1) US8384810B2 (pt)
EP (2) EP2763398B1 (pt)
JP (1) JP5410444B2 (pt)
CN (1) CN101904165A (pt)
BR (1) BRPI0722359A2 (pt)
CA (1) CA2709969C (pt)
ES (1) ES2708951T3 (pt)
IL (1) IL206335A (pt)
PL (1) PL2763398T3 (pt)
PT (1) PT2763398T (pt)
WO (1) WO2009082193A1 (pt)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9823339B2 (en) 2010-12-21 2017-11-21 Microsoft Technology Licensing, Llc Plural anode time-of-flight sensor
NL2011905C2 (en) * 2013-12-06 2015-06-09 Photonis Netherlands B V Electron-bombarded image sensor device.
EP3128742B1 (en) * 2015-08-03 2018-05-16 Fundació Institut de Ciències Fotòniques Image sensor with non-local readout circuit and optoelectronic device comprising said image sensor
CN105450948B (zh) * 2015-12-15 2018-06-26 中国科学院西安光学精密机械研究所 一种电子轰击固态光电倍增管式微光数字图像传感器
CN107155073B (zh) * 2017-05-04 2019-06-07 西北核技术研究所 基于图像传感器多帧曝光的瞬态成像动态范围扩展方法
US10827135B2 (en) * 2018-11-26 2020-11-03 Bae Systems Information And Electronic Systems Integration Inc. BDI based pixel for synchronous frame-based and asynchronous event-driven readouts
JP7479859B2 (ja) * 2020-01-31 2024-05-09 浜松ホトニクス株式会社 質量分析装置、及び質量分析方法
CN115361506B (zh) * 2022-08-17 2024-05-24 中科微机电技术（北京）有限公司 有源像素传感器的控制方法、有源像素传感器及电子设备

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JP3684580B2 (ja) * 1992-08-31 2005-08-17 ソニー株式会社 固体撮像装置
JPH08294058A (ja) * 1995-04-24 1996-11-05 Sony Corp 固体撮像装置及びこれを搭載したビデオカメラ
JP4081188B2 (ja) * 1998-09-16 2008-04-23 オリンパス株式会社 増幅型固体撮像素子を用いた撮像装置
EP1515541A3 (en) 1998-09-28 2008-07-23 3DV Systems Ltd. Distance measurement with a camera
EP1166550A4 (en) * 1999-03-04 2005-09-14 Vision Sciences Inc IMAGE SENSOR BASIC PATTERN WITH INDIVIDUALLY ADJUSTABLE ELECTRONIC CONTROL CIRCUIT
US6285018B1 (en) 1999-07-20 2001-09-04 Intevac, Inc. Electron bombarded active pixel sensor
US6657178B2 (en) * 1999-07-20 2003-12-02 Intevac, Inc. Electron bombarded passive pixel sensor imaging
AU6311900A (en) 1999-07-29 2001-02-19 Vision Sciences, Inc. Image-sensor architecture for per-pixel charge-integration control
WO2001081949A2 (en) * 2000-04-26 2001-11-01 Arete Associates Very fast time resolved imaging in multiparameter measurement space
JP3558589B2 (ja) * 2000-06-14 2004-08-25 Ｎｅｃエレクトロニクス株式会社 Ｍｏｓ型イメージセンサ及びその駆動方法
JP2002027303A (ja) * 2000-07-10 2002-01-25 Hamamatsu Photonics Kk 撮像装置
US7315324B2 (en) 2002-08-15 2008-01-01 Dixon Cleveland Motion clutter suppression for image-subtracting cameras
US7277129B1 (en) 2002-10-31 2007-10-02 Sensata Technologies, Inc. Pixel design including in-pixel correlated double sampling circuit
CA2554955C (en) * 2004-02-04 2010-09-14 Elbit Systems Ltd. Gated imaging
US7102117B2 (en) 2004-06-08 2006-09-05 Eastman Kodak Company Active pixel sensor cell with integrating varactor and method for using such cell
KR100597651B1 (ko) 2005-01-24 2006-07-05 한국과학기술원 이미지 센서, 실제 이미지를 전기적 신호로 바꾸는 장치 및 그 방법
US7847847B2 (en) * 2005-01-27 2010-12-07 Taiwan Semiconductor Manufacturing Company, Ltd. Structure for CMOS image sensor with a plurality of capacitors
KR101257526B1 (ko) * 2005-04-07 2013-04-23 고쿠리츠다이가쿠호진 도호쿠다이가쿠 광 센서, 고체 촬상 장치, 및 고체 촬상 장치의 동작 방법
JP2007006049A (ja) * 2005-06-23 2007-01-11 Funai Electric Co Ltd 固体撮像装置
US20070263099A1 (en) 2006-05-09 2007-11-15 Pixim Inc. Ambient Light Rejection In Digital Video Images
US8243103B2 (en) * 2009-05-29 2012-08-14 Exelis, Inc. Laser aiming spot distinguishing methods and apparatus

Also Published As

Publication number Publication date
ES2708951T3 (es) 2019-04-12
EP2763398A3 (en) 2014-12-10
CA2709969C (en) 2015-11-03
US20100328501A1 (en) 2010-12-30
IL206335A (en) 2014-12-31
BRPI0722359A2 (pt) 2014-03-18
EP2220862B1 (en) 2014-07-23
WO2009082193A1 (en) 2009-07-02
PL2763398T3 (pl) 2019-04-30
JP5410444B2 (ja) 2014-02-05
CN101904165A (zh) 2010-12-01
CA2709969A1 (en) 2009-07-02
JP2011508504A (ja) 2011-03-10
EP2763398B1 (en) 2018-10-31
IL206335A0 (en) 2010-12-30
US8384810B2 (en) 2013-02-26
EP2763398A2 (en) 2014-08-06
EP2220862A1 (en) 2010-08-25

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