PL407336A1 - Struktura ogniwa fotowoltaicznego oraz sposób wykonania struktury ogniwa fotowoltaicznego - Google Patents

Struktura ogniwa fotowoltaicznego oraz sposób wykonania struktury ogniwa fotowoltaicznego

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Publication number
PL407336A1
PL407336A1 PL407336A PL40733614A PL407336A1 PL 407336 A1 PL407336 A1 PL 407336A1 PL 407336 A PL407336 A PL 407336A PL 40733614 A PL40733614 A PL 40733614A PL 407336 A1 PL407336 A1 PL 407336A1
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PL
Poland
Prior art keywords
layer
photovoltaic cell
zno
electrical contact
substrate
Prior art date
Application number
PL407336A
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English (en)
Inventor
Sylwia Gierałtowska
Marek Godlewski
Grzegorz Łuka
Rafał Pietruszka
Łukasz Wachnicki
Bartłomiej Witkowski
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Instytut Fizyki Polskiej Akademii Nauk
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Application filed by Instytut Fizyki Polskiej Akademii Nauk filed Critical Instytut Fizyki Polskiej Akademii Nauk
Priority to PL407336A priority Critical patent/PL407336A1/pl
Priority to EP15714934.5A priority patent/EP3111486B1/en
Priority to PCT/IB2015/051425 priority patent/WO2015128825A1/en
Priority to US15/121,810 priority patent/US20170069772A1/en
Publication of PL407336A1 publication Critical patent/PL407336A1/pl

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    • HELECTRICITY
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    • H01L31/02Details
    • H01L31/0224Electrodes
    • H01L31/022466Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H01L31/022483Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of zinc oxide [ZnO]
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    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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    • C23C16/30Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
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    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523Pulsed gas flow or change of composition over time
    • C23C16/45525Atomic layer deposition [ALD]
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    • C30B7/00Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
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    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
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    • H01L31/074Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a heterojunction with an element of Group IV of the Periodic Table, e.g. ITO/Si, GaAs/Si or CdTe/Si solar cells
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    • H01L31/1884Manufacture of transparent electrodes, e.g. TCO, ITO
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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  • Chemical & Material Sciences (AREA)
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  • Physics & Mathematics (AREA)
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  • Photovoltaic Devices (AREA)

Abstract

Przedmiotem wynalazku jest struktura ogniwa fotowoltaicznego oraz sposób wykonania struktury ogniwa fotowoltaicznego. Przedstawiona na rysunku struktura ma podłoże o przewodnictwie typu p, ze spodnim kontaktem elektrycznym, na którym znajduje się warstwa aktywna ZnO a na niej przezroczysta elektroda z kontaktem elektrycznym. W strukturze tej warstwę aktywną ZnO pomiędzy podłożem (1), a warstwą przezroczystej elektrody (6), stanowi warstwa nanosłupków ZnO o wysokości co najmniej 50 nm pokrytych warstwą ZnO o grubości co najmniej 1 nm. Sposób wykonania struktury ogniwa fotowoltaicznego, polega na tym, że najpierw podłoże typu p, ze spodnim kontaktem elektrycznym pokrywa się warstwą zarodkującą, następnie podłoże wraz z warstwą zarodkującą, umieszcza w mieszaninie reakcyjnej o wartości pH 6,5 - 12, zawierającej rozpuszczalnik, co najmniej jeden prekursor tlenu, i co najmniej jeden prekursor cynku, podgrzewa się do temperatury 30 - 95°C i utrzymuje w tej temperaturze przez co najmniej 1 sekundę. Później, z podłoża i wykrystalizowanych nanosłupków warstwy aktywnej usuwa się zanieczyszczenia, i pokrywa nanosłupki warstwą ZnO. Następnie warstwę aktywną pokrywa się warstwą przezroczystej elektrody, na której wykonuje się górny kontakt elektryczny.
PL407336A 2014-02-27 2014-02-27 Struktura ogniwa fotowoltaicznego oraz sposób wykonania struktury ogniwa fotowoltaicznego PL407336A1 (pl)

Priority Applications (4)

Application Number Priority Date Filing Date Title
PL407336A PL407336A1 (pl) 2014-02-27 2014-02-27 Struktura ogniwa fotowoltaicznego oraz sposób wykonania struktury ogniwa fotowoltaicznego
EP15714934.5A EP3111486B1 (en) 2014-02-27 2015-02-26 Photovoltaic cell structure and method of manufacturing a photovoltaic cell
PCT/IB2015/051425 WO2015128825A1 (en) 2014-02-27 2015-02-26 Photovoltaic cell structure and method of manufacturing a photovoltaic cell
US15/121,810 US20170069772A1 (en) 2014-02-27 2015-02-26 Photovoltaic cell structure and method of manufacturing a photovoltaic cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PL407336A PL407336A1 (pl) 2014-02-27 2014-02-27 Struktura ogniwa fotowoltaicznego oraz sposób wykonania struktury ogniwa fotowoltaicznego

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PL407336A1 true PL407336A1 (pl) 2015-08-31

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PL407336A PL407336A1 (pl) 2014-02-27 2014-02-27 Struktura ogniwa fotowoltaicznego oraz sposób wykonania struktury ogniwa fotowoltaicznego

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US (1) US20170069772A1 (pl)
EP (1) EP3111486B1 (pl)
PL (1) PL407336A1 (pl)
WO (1) WO2015128825A1 (pl)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016182465A1 (en) 2015-05-08 2016-11-17 Instytut Fizyki Pan Photovoltaic cell structure and method to produce the same
PL425218A1 (pl) * 2018-04-13 2019-10-21 Centrum Badań I Rozwoju Technologii Dla Przemysłu Spółka Akcyjna Krzemowe ogniwo fotowoltaiczne i sposób wytwarzania krzemowych ogniw fotowoltaicznych

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
PL3553829T3 (pl) * 2018-04-13 2022-11-21 Centrum Badań I Rozwoju Technologii Dla Przemysłu Spółka Akcyjna Krzemowe ogniwo fotowoltaiczne i sposób wytwarzania krzemowych ogniw fotowoltaicznych

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100180950A1 (en) * 2008-11-14 2010-07-22 University Of Connecticut Low-temperature surface doping/alloying/coating of large scale semiconductor nanowire arrays
FR2972852B1 (fr) * 2011-03-17 2013-04-12 Commissariat Energie Atomique Dispositif a base de nano/microfils stabilise mecaniquement et aux proprietes optiques ameliorees et son procede de realisation

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016182465A1 (en) 2015-05-08 2016-11-17 Instytut Fizyki Pan Photovoltaic cell structure and method to produce the same
PL425218A1 (pl) * 2018-04-13 2019-10-21 Centrum Badań I Rozwoju Technologii Dla Przemysłu Spółka Akcyjna Krzemowe ogniwo fotowoltaiczne i sposób wytwarzania krzemowych ogniw fotowoltaicznych

Also Published As

Publication number Publication date
EP3111486A1 (en) 2017-01-04
WO2015128825A1 (en) 2015-09-03
EP3111486B1 (en) 2024-05-01
US20170069772A1 (en) 2017-03-09

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