PL3891886T3 - Tranzystor mocy wysokiej częstotliwości i wzmacniacz mocy wysokiej częstotliwości - Google Patents
Tranzystor mocy wysokiej częstotliwości i wzmacniacz mocy wysokiej częstotliwościInfo
- Publication number
- PL3891886T3 PL3891886T3 PL19808709.0T PL19808709T PL3891886T3 PL 3891886 T3 PL3891886 T3 PL 3891886T3 PL 19808709 T PL19808709 T PL 19808709T PL 3891886 T3 PL3891886 T3 PL 3891886T3
- Authority
- PL
- Poland
- Prior art keywords
- frequency power
- power amplifier
- power transistor
- transistor
- amplifier
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
- H03F1/0211—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the supply voltage or current
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/56—Modifications of input or output impedances, not otherwise provided for
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/195—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W44/00—Electrical arrangements for controlling or matching impedance
- H10W44/20—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W44/00—Electrical arrangements for controlling or matching impedance
- H10W44/20—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
- H10W44/203—Electrical connections
- H10W44/206—Wires
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W44/00—Electrical arrangements for controlling or matching impedance
- H10W44/20—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
- H10W44/226—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF] for HF amplifiers
- H10W44/234—Arrangements for impedance matching
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W44/00—Electrical arrangements for controlling or matching impedance
- H10W44/20—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
- H10W44/251—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF] for monolithic microwave integrated circuits [MMIC]
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Amplifiers (AREA)
- Microwave Amplifiers (AREA)
- Inverter Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102018131040.4A DE102018131040B4 (de) | 2018-12-05 | 2018-12-05 | Hochfrequenz-Leistungstransistor und Hochfrequenz-Leistungsverstärker |
| PCT/EP2019/081064 WO2020114731A1 (de) | 2018-12-05 | 2019-11-12 | Hochfrequenz-leistungstransistor und hochfrequenz-leistungsverstärker |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| PL3891886T3 true PL3891886T3 (pl) | 2024-06-17 |
Family
ID=68654441
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PL19808709.0T PL3891886T3 (pl) | 2018-12-05 | 2019-11-12 | Tranzystor mocy wysokiej częstotliwości i wzmacniacz mocy wysokiej częstotliwości |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US11984413B2 (pl) |
| EP (1) | EP3891886B1 (pl) |
| JP (2) | JP2022512148A (pl) |
| KR (1) | KR102795974B1 (pl) |
| CN (1) | CN113261200B (pl) |
| CA (1) | CA3122012A1 (pl) |
| DE (1) | DE102018131040B4 (pl) |
| PL (1) | PL3891886T3 (pl) |
| WO (1) | WO2020114731A1 (pl) |
Family Cites Families (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53132249A (en) * | 1977-04-22 | 1978-11-17 | Nec Corp | Integrated circuit for microwave transistor amplifier |
| EP0015709B1 (en) * | 1979-03-10 | 1984-05-23 | Fujitsu Limited | Constructional arrangement for semiconductor devices |
| JPS55140251A (en) * | 1979-04-12 | 1980-11-01 | Fujitsu Ltd | Semiconductor device |
| JPH01165149A (ja) | 1987-12-21 | 1989-06-29 | Mitsubishi Electric Corp | 半導体装置 |
| JPH09121127A (ja) * | 1995-10-26 | 1997-05-06 | Murata Mfg Co Ltd | 高周波増幅集積回路装置 |
| JPH1165149A (ja) * | 1997-08-14 | 1999-03-05 | Canon Inc | 電子写真感光体、該電子写真感光体を有するプロセスカ−トリッジ及び電子写真装置 |
| US5841184A (en) * | 1997-09-19 | 1998-11-24 | The Whitaker Corporation | Integrated emitter drain bypass capacitor for microwave/RF power device applications |
| WO1999040629A1 (en) * | 1998-02-07 | 1999-08-12 | Xemod, Inc. | Quasi-mesh gate structure including plugs connecting source regions with backside for lateral rf mos devices |
| US6046641A (en) * | 1998-07-22 | 2000-04-04 | Eni Technologies, Inc. | Parallel HV MOSFET high power stable amplifier |
| US6147455A (en) | 1999-06-02 | 2000-11-14 | General Electric Company | Gas discharge lamp ballast circuit with electronic starter |
| JP2001068877A (ja) * | 1999-08-30 | 2001-03-16 | Sharp Corp | 電子回路装置 |
| JP4094239B2 (ja) * | 2001-02-19 | 2008-06-04 | 富士通株式会社 | 増幅器 |
| US6593797B1 (en) * | 2002-06-18 | 2003-07-15 | Koninklijke Philips Electronics N.V. | High-frequency integrated transistor module |
| US6734728B1 (en) * | 2002-12-19 | 2004-05-11 | Infineon Technologies North America Corp. | RF power transistor with internal bias feed |
| US7564303B2 (en) * | 2005-07-26 | 2009-07-21 | Infineon Technologies Ag | Semiconductor power device and RF signal amplifier |
| JP2007228094A (ja) | 2006-02-21 | 2007-09-06 | Toshiba Corp | 増幅器 |
| JP4770518B2 (ja) * | 2006-03-01 | 2011-09-14 | 日本電気株式会社 | 高出力増幅器 |
| JP2011058836A (ja) | 2009-09-07 | 2011-03-24 | Alps Electric Co Ltd | 無線センサ装置 |
| JP5189576B2 (ja) * | 2009-10-05 | 2013-04-24 | 日本電波工業株式会社 | 電圧制御発振器 |
| JP2011193191A (ja) | 2010-03-15 | 2011-09-29 | Renesas Electronics Corp | 半導体集積回路およびそれを内蔵した高周波モジュール |
| US8890611B2 (en) * | 2012-02-08 | 2014-11-18 | Mediatek Inc. | Operational amplifier circuits |
| US9654055B2 (en) * | 2013-04-15 | 2017-05-16 | Agence Spatiale Europeenne | Radio-frequency high power amplifier with broadband envelope tracking by means of reversed buck converter |
| US9985592B2 (en) * | 2015-05-13 | 2018-05-29 | Skyworks Solutions, Inc. | High gain RF power amplifier with negative capacitor |
| WO2017170710A1 (ja) | 2016-03-31 | 2017-10-05 | 三菱電機株式会社 | 輝度調整装置及び方法、並びに画像表示システム、並びにプログラム及び記録媒体 |
| KR101910896B1 (ko) * | 2017-06-27 | 2018-10-23 | 성균관대학교 산학협력단 | 피킹 증폭기의 출력 정합회로에 공진회로를 사용하는 광대역 도허티 전력증폭기 |
-
2018
- 2018-12-05 DE DE102018131040.4A patent/DE102018131040B4/de active Active
-
2019
- 2019-11-12 PL PL19808709.0T patent/PL3891886T3/pl unknown
- 2019-11-12 CN CN201980080753.9A patent/CN113261200B/zh active Active
- 2019-11-12 US US17/299,835 patent/US11984413B2/en active Active
- 2019-11-12 KR KR1020217018187A patent/KR102795974B1/ko active Active
- 2019-11-12 EP EP19808709.0A patent/EP3891886B1/de active Active
- 2019-11-12 CA CA3122012A patent/CA3122012A1/en active Pending
- 2019-11-12 JP JP2021532411A patent/JP2022512148A/ja active Pending
- 2019-11-12 WO PCT/EP2019/081064 patent/WO2020114731A1/de not_active Ceased
-
2024
- 2024-02-14 JP JP2024020005A patent/JP2024056865A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| US20220028807A1 (en) | 2022-01-27 |
| EP3891886A1 (de) | 2021-10-13 |
| KR102795974B1 (ko) | 2025-04-14 |
| DE102018131040B4 (de) | 2022-02-24 |
| US11984413B2 (en) | 2024-05-14 |
| CN113261200B (zh) | 2024-05-24 |
| EP3891886B1 (de) | 2023-12-27 |
| EP3891886C0 (de) | 2023-12-27 |
| DE102018131040A1 (de) | 2020-06-10 |
| JP2024056865A (ja) | 2024-04-23 |
| WO2020114731A1 (de) | 2020-06-11 |
| KR20210096623A (ko) | 2021-08-05 |
| CN113261200A (zh) | 2021-08-13 |
| CA3122012A1 (en) | 2020-06-11 |
| JP2022512148A (ja) | 2022-02-02 |
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