PL3886181T3 - Ogniwo słoneczne z krzemu krystalicznego i sposób jego wytwarzania oraz zespół fotowoltaiczny - Google Patents

Ogniwo słoneczne z krzemu krystalicznego i sposób jego wytwarzania oraz zespół fotowoltaiczny

Info

Publication number
PL3886181T3
PL3886181T3 PL19890987.1T PL19890987T PL3886181T3 PL 3886181 T3 PL3886181 T3 PL 3886181T3 PL 19890987 T PL19890987 T PL 19890987T PL 3886181 T3 PL3886181 T3 PL 3886181T3
Authority
PL
Poland
Prior art keywords
preparation
solar cell
crystalline silicon
method therefor
silicon solar
Prior art date
Application number
PL19890987.1T
Other languages
English (en)
Inventor
Haipeng YIN
Wei Shan
Kun TANG
Original Assignee
Jingao Solar Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jingao Solar Co., Ltd. filed Critical Jingao Solar Co., Ltd.
Publication of PL3886181T3 publication Critical patent/PL3886181T3/pl

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/146—Back-junction photovoltaic cells, e.g. having interdigitated base-emitter regions on the back side
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/164—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells
    • H10F10/165—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells
    • H10F10/166—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells the Group IV-IV heterojunctions being heterojunctions of crystalline and amorphous materials, e.g. silicon heterojunction [SHJ] photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
PL19890987.1T 2018-11-27 2019-06-28 Ogniwo słoneczne z krzemu krystalicznego i sposób jego wytwarzania oraz zespół fotowoltaiczny PL3886181T3 (pl)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201821965911.8U CN209389043U (zh) 2018-11-27 2018-11-27 晶体硅太阳能电池及光伏组件
PCT/CN2019/093529 WO2020107887A1 (zh) 2018-11-27 2019-06-28 晶体硅太阳能电池及其制备方法、光伏组件

Publications (1)

Publication Number Publication Date
PL3886181T3 true PL3886181T3 (pl) 2026-05-11

Family

ID=67865654

Family Applications (1)

Application Number Title Priority Date Filing Date
PL19890987.1T PL3886181T3 (pl) 2018-11-27 2019-06-28 Ogniwo słoneczne z krzemu krystalicznego i sposób jego wytwarzania oraz zespół fotowoltaiczny

Country Status (10)

Country Link
US (1) US11961930B2 (pl)
EP (1) EP3886181B1 (pl)
JP (1) JP7068541B2 (pl)
KR (1) KR20210062096A (pl)
CN (2) CN209389043U (pl)
AU (1) AU2019390365B2 (pl)
ES (1) ES3057756T3 (pl)
MY (1) MY200704A (pl)
PL (1) PL3886181T3 (pl)
WO (1) WO2020107887A1 (pl)

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CN209389043U (zh) 2018-11-27 2019-09-13 晶澳（扬州）太阳能科技有限公司 晶体硅太阳能电池及光伏组件
CN114843349B (zh) * 2020-10-30 2023-06-23 浙江晶科能源有限公司 太阳能电池
US12598818B2 (en) 2021-07-22 2026-04-07 Zhejiang Aiko Solar Energy Technology Co., Ltd. Doped region structure and solar cell comprising the same, cell assembly, and photovoltaic system
CN113284967B (zh) * 2021-07-22 2021-10-08 浙江爱旭太阳能科技有限公司 一种太阳能电池及其掺杂区结构、电池组件及光伏系统
US12009440B2 (en) 2021-07-22 2024-06-11 Solarlab Aiko Europe Gmbh Doped region structure and solar cell comprising the same, cell assembly, and photovoltaic system
US11837671B2 (en) * 2021-07-22 2023-12-05 Solarlab Aiko Europe Gmbh Doped region structure and solar cell comprising the same, cell assembly, and photovoltaic system
CN113871495A (zh) * 2021-08-16 2021-12-31 东方日升新能源股份有限公司 异质结电池片及其加工方法以及电池组件
JP7664372B2 (ja) 2022-04-29 2025-04-17 ジョジアン ジンコ ソーラー カンパニー リミテッド 太陽電池および光起電力モジュール
WO2023206980A1 (en) * 2022-04-29 2023-11-02 Zhejiang Jinko Solar Co., Ltd. Solar cell and photovoltaic module
CN116259672B (zh) * 2022-09-06 2024-09-03 隆基绿能科技股份有限公司 一种太阳能电池
CN116722060A (zh) * 2022-09-28 2023-09-08 浙江晶科能源有限公司 太阳能电池及光伏组件
CN115881835B (zh) * 2023-02-08 2024-05-14 浙江晶科能源有限公司 太阳能电池及其制备方法、光伏组件
CN116093207A (zh) * 2023-03-02 2023-05-09 正泰新能科技有限公司 一种背接触太阳能电池及其制作方法
CN121368936A (zh) * 2023-06-20 2026-01-20 国立研究开发法人产业技术综合研究所 太阳能电池元件和太阳能电池元件的制造方法
US20250098365A1 (en) * 2023-09-15 2025-03-20 Jinko Solar Co., Ltd. Solar cell, method for preparing the same, and photovoltaic module
WO2025156038A1 (en) * 2024-01-22 2025-07-31 Motion Composites Inc. Control system for electrically assisted wheelchair
CN119562602B (zh) * 2025-01-21 2025-04-18 浙江爱旭太阳能科技有限公司 一种太阳能电池片、电池组件及光伏系统
CN120051010B (zh) * 2025-01-21 2025-12-05 西安隆基乐叶光伏科技有限公司 一种太阳能电池和光伏组件
CN119855299B (zh) * 2025-03-18 2025-07-22 浙江爱旭太阳能科技有限公司 太阳能电池、电池组件以及光伏系统

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Also Published As

Publication number Publication date
WO2020107887A1 (zh) 2020-06-04
EP3886181A4 (en) 2022-01-19
US20220029040A1 (en) 2022-01-27
JP2021516873A (ja) 2021-07-08
MY200704A (en) 2024-01-11
EP3886181A1 (en) 2021-09-29
JP7068541B2 (ja) 2022-05-16
KR20210062096A (ko) 2021-05-28
US11961930B2 (en) 2024-04-16
AU2019390365B2 (en) 2022-08-04
EP3886181B1 (en) 2025-12-17
EP3886181C0 (en) 2025-12-17
ES3057756T3 (en) 2026-03-04
CN209389043U (zh) 2019-09-13
CN113330583B (zh) 2023-07-07
CN113330583A (zh) 2021-08-31
AU2019390365A1 (en) 2021-06-17

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