PL3857615T3 - Element półprzewodnikowy i sposób oddzielania elementu półprzewodnikowego ze złączem pn - Google Patents

Element półprzewodnikowy i sposób oddzielania elementu półprzewodnikowego ze złączem pn

Info

Publication number
PL3857615T3
PL3857615T3 PL19778933.2T PL19778933T PL3857615T3 PL 3857615 T3 PL3857615 T3 PL 3857615T3 PL 19778933 T PL19778933 T PL 19778933T PL 3857615 T3 PL3857615 T3 PL 3857615T3
Authority
PL
Poland
Prior art keywords
semiconductor component
singulating
junction
semiconductor
component
Prior art date
Application number
PL19778933.2T
Other languages
English (en)
Inventor
Elmar LOHMÜLLER
Ralf Preu
Puzant Baliozian
Tobias Fellmeth
Nico Wöhrle
Pierre Saint-Cast
Armin RICHTER
Original Assignee
Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. filed Critical Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V.
Publication of PL3857615T3 publication Critical patent/PL3857615T3/pl

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00Individual photovoltaic cells, e.g. solar cells
    • H10F10/10Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14Photovoltaic cells having only PN homojunction potential barriers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157Partial encapsulation or coating
    • H01L23/3171Partial encapsulation or coating the coating being directly applied to the semiconductor body, e.g. passivation layer
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157Partial encapsulation or coating
    • H01L23/3185Partial encapsulation or coating the coating covering also the sidewalls of the semiconductor body
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00Manufacture or treatment of devices covered by this subclass
    • H10F71/121The active layers comprising only Group IV materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00Manufacture or treatment of devices covered by this subclass
    • H10F71/129Passivating
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/30Coatings
    • H10F77/306Coatings for devices having potential barriers
    • H10F77/311Coatings for devices having potential barriers for photovoltaic cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/547Monocrystalline silicon PV cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Photovoltaic Devices (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Sustainable Energy (AREA)
  • Bipolar Transistors (AREA)
PL19778933.2T 2018-09-24 2019-09-24 Element półprzewodnikowy i sposób oddzielania elementu półprzewodnikowego ze złączem pn PL3857615T3 (pl)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102018123485.6A DE102018123485B4 (de) 2018-09-24 2018-09-24 Verfahren zum Auftrennen eines Halbleiterbauelements mit einem pn-Übergang
PCT/EP2019/075603 WO2020064670A1 (de) 2018-09-24 2019-09-24 Halbleiterbauelement und verfahren zum vereinzeln eines halbleiterbauelements mit einem pn-übergang

Publications (1)

Publication Number Publication Date
PL3857615T3 true PL3857615T3 (pl) 2025-05-12

Family

ID=68072378

Family Applications (1)

Application Number Title Priority Date Filing Date
PL19778933.2T PL3857615T3 (pl) 2018-09-24 2019-09-24 Element półprzewodnikowy i sposób oddzielania elementu półprzewodnikowego ze złączem pn

Country Status (9)

Country Link
US (1) US11508863B2 (pl)
EP (1) EP3857615B1 (pl)
CN (1) CN113169242B (pl)
DE (1) DE102018123485B4 (pl)
ES (1) ES3024135T3 (pl)
HR (1) HRP20250458T1 (pl)
HU (1) HUE071416T2 (pl)
PL (1) PL3857615T3 (pl)
WO (1) WO2020064670A1 (pl)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3143856B1 (fr) * 2022-12-16 2025-11-21 Commissariat Energie Atomique Procédé de fabrication d’une cellule photovoltaïque
DE102023112827A1 (de) 2023-05-16 2024-11-21 Singulus Technologies Aktiengesellschaft Carrier für die Kantenpassivierung

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008115814A2 (en) * 2007-03-16 2008-09-25 Bp Corporation North America Inc. Solar cells
EP2071632B1 (en) * 2007-12-14 2013-02-27 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Thin-film solar cell and process for its manufacture
US8481953B2 (en) * 2008-08-21 2013-07-09 The United States Of America, As Represented By The Secretary Of The Navy Methods and systems of isolating segmented radiation detectors using alumina
DE102009026410A1 (de) * 2009-05-20 2011-03-17 Carl Baasel Lasertechnik Gmbh & Co. Kg Verfahren zum Vereinzeln von Silizium-Solarzellen
US8841170B2 (en) 2010-10-27 2014-09-23 The Regents Of The University Of California Methods for scribing of semiconductor devices with improved sidewall passivation
KR101258938B1 (ko) * 2011-07-25 2013-05-07 엘지전자 주식회사 태양 전지

Also Published As

Publication number Publication date
WO2020064670A1 (de) 2020-04-02
EP3857615C0 (de) 2025-03-26
DE102018123485B4 (de) 2021-04-08
HRP20250458T1 (hr) 2025-06-06
CN113169242B (zh) 2024-10-11
EP3857615B1 (de) 2025-03-26
US11508863B2 (en) 2022-11-22
US20220005964A1 (en) 2022-01-06
EP3857615A1 (de) 2021-08-04
HUE071416T2 (hu) 2025-08-28
DE102018123485A1 (de) 2020-03-26
ES3024135T3 (en) 2025-06-03
CN113169242A (zh) 2021-07-23

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