PL3605616T3 - Struktura piksela oraz sposób wytwarzania - Google Patents

Struktura piksela oraz sposób wytwarzania

Info

Publication number
PL3605616T3
PL3605616T3 PL17904056T PL17904056T PL3605616T3 PL 3605616 T3 PL3605616 T3 PL 3605616T3 PL 17904056 T PL17904056 T PL 17904056T PL 17904056 T PL17904056 T PL 17904056T PL 3605616 T3 PL3605616 T3 PL 3605616T3
Authority
PL
Poland
Prior art keywords
manufacturing
pixel structure
pixel
Prior art date
Application number
PL17904056T
Other languages
English (en)
Inventor
Dongze LI
Lixuan CHEN
Original Assignee
Shenzhen China Star Optoelectronics Technology Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shenzhen China Star Optoelectronics Technology Co., Ltd. filed Critical Shenzhen China Star Optoelectronics Technology Co., Ltd.
Publication of PL3605616T3 publication Critical patent/PL3605616T3/pl

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00
    • H01L25/0753—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0363—Manufacture or treatment of packages of optical field-shaping means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0364—Manufacture or treatment of packages of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/814—Bodies having reflecting means, e.g. semiconductor Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)
  • Led Devices (AREA)
  • Led Device Packages (AREA)
PL17904056T 2017-03-31 2017-05-10 Struktura piksela oraz sposób wytwarzania PL3605616T3 (pl)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
CN201710207848.5A CN106784203B (zh) 2017-03-31 2017-03-31 一种像素结构及制造方法
EP17904056.3A EP3605616B1 (en) 2017-03-31 2017-05-10 Pixel structure and manufacturing method
PCT/CN2017/083689 WO2018176583A1 (zh) 2017-03-31 2017-05-10 一种像素结构及制造方法

Publications (1)

Publication Number Publication Date
PL3605616T3 true PL3605616T3 (pl) 2022-06-20

Family

ID=58966004

Family Applications (1)

Application Number Title Priority Date Filing Date
PL17904056T PL3605616T3 (pl) 2017-03-31 2017-05-10 Struktura piksela oraz sposób wytwarzania

Country Status (7)

Country Link
US (1) US10367128B2 (pl)
EP (1) EP3605616B1 (pl)
JP (1) JP6899917B2 (pl)
KR (1) KR102245587B1 (pl)
CN (1) CN106784203B (pl)
PL (1) PL3605616T3 (pl)
WO (1) WO2018176583A1 (pl)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107978665B (zh) * 2017-11-16 2019-09-17 歌尔股份有限公司 Micro LED制备方法
KR102422091B1 (ko) * 2017-12-07 2022-07-18 엘지디스플레이 주식회사 발광 소자 및 이를 이용한 표시 장치
CN108461651A (zh) * 2018-03-28 2018-08-28 京东方科技集团股份有限公司 像素结构及其制备方法、显示面板
CN108428771A (zh) * 2018-05-16 2018-08-21 青岛海信电器股份有限公司 一种微型发光二极管显示屏的制作方法和装置
CN108538877B (zh) * 2018-05-17 2020-09-01 深圳市华星光电技术有限公司 Micro LED显示面板的制作方法
CN108878626B (zh) 2018-06-29 2020-02-18 京东方科技集团股份有限公司 一种显示面板及制作方法、显示装置
TWI721308B (zh) * 2018-08-17 2021-03-11 英屬開曼群島商錼創科技股份有限公司 微型發光二極體顯示裝置
CN110265522B (zh) * 2019-06-28 2021-01-08 上海天马微电子有限公司 显示面板、显示装置和显示面板的制造方法
WO2021104494A1 (zh) * 2019-11-29 2021-06-03 海信视像科技股份有限公司 一种显示装置
CN111063268A (zh) * 2019-12-12 2020-04-24 深圳市华星光电半导体显示技术有限公司 微发光二极管显示面板及其制备方法、显示装置
WO2021119881A1 (zh) * 2019-12-16 2021-06-24 重庆康佳光电技术研究院有限公司 一种micro LED芯片制程方法及micro LED外延片
KR102765516B1 (ko) 2020-05-14 2025-02-12 삼성전자주식회사 디스플레이 모듈 및 디스플레이 모듈의 제조 방법
CN112968079B (zh) * 2020-07-08 2022-05-13 重庆康佳光电技术研究院有限公司 发光单元、显示背板及其制作方法和芯片及其转移方法
CN114420716B (zh) * 2022-01-11 2024-10-25 Tcl华星光电技术有限公司 微型发光二极管背板及其制备方法
KR20250010239A (ko) * 2023-07-12 2025-01-21 엘지디스플레이 주식회사 표시패널용 모기판과 이를 이용한 표시패널

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04163455A (ja) * 1990-10-26 1992-06-09 Nec Kyushu Ltd フォトマスク
CN100418242C (zh) * 2006-05-17 2008-09-10 广州南科集成电子有限公司 Led制造方法
CN101866075A (zh) 2010-04-30 2010-10-20 汕头超声显示器（二厂）有限公司 反射型tft液晶显示器及其制造方法
JP5940775B2 (ja) * 2010-08-27 2016-06-29 ローム株式会社 液晶表示装置バックライト用ｌｅｄ光源装置および液晶表示装置
KR101806550B1 (ko) * 2011-06-14 2017-12-07 엘지이노텍 주식회사 발광소자 패키지
US9111464B2 (en) * 2013-06-18 2015-08-18 LuxVue Technology Corporation LED display with wavelength conversion layer
US9035279B2 (en) * 2013-07-08 2015-05-19 LuxVue Technology Corporation Micro device with stabilization post
US9657903B2 (en) * 2013-08-20 2017-05-23 Nthdegree Technologies Worldwide Inc. Geometrical light extraction structures for printed LEDs
JP2015187635A (ja) * 2014-03-26 2015-10-29 株式会社Ｊｏｌｅｄ 色変化部材、光装置、表示装置および電子機器
TWI665800B (zh) 2015-06-16 2019-07-11 友達光電股份有限公司 發光二極體顯示器及其製造方法
KR20170026958A (ko) * 2015-08-31 2017-03-09 삼성디스플레이 주식회사 표시장치
CN105976725B (zh) * 2016-06-20 2019-04-02 深圳市华星光电技术有限公司 微发光二极管显示面板
CN106229394B (zh) * 2016-10-19 2019-06-07 武汉华星光电技术有限公司 微发光二极管及其制造方法和显示器

Also Published As

Publication number Publication date
WO2018176583A1 (zh) 2018-10-04
US20180315909A1 (en) 2018-11-01
KR102245587B1 (ko) 2021-04-27
JP6899917B2 (ja) 2021-07-07
US10367128B2 (en) 2019-07-30
EP3605616A4 (en) 2020-11-18
EP3605616B1 (en) 2022-01-26
CN106784203B (zh) 2019-01-04
EP3605616A1 (en) 2020-02-05
JP2020511008A (ja) 2020-04-09
KR20190131546A (ko) 2019-11-26
CN106784203A (zh) 2017-05-31

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