PL3584667T3 - Obwód napięcia odniesienia o niskim dryfie temperaturowym - Google Patents

Obwód napięcia odniesienia o niskim dryfie temperaturowym

Info

Publication number
PL3584667T3
PL3584667T3 PL17896753.5T PL17896753T PL3584667T3 PL 3584667 T3 PL3584667 T3 PL 3584667T3 PL 17896753 T PL17896753 T PL 17896753T PL 3584667 T3 PL3584667 T3 PL 3584667T3
Authority
PL
Poland
Prior art keywords
reference voltage
low temperature
voltage circuit
temperature drift
drift reference
Prior art date
Application number
PL17896753.5T
Other languages
English (en)
Inventor
Yuming Feng
Liang Zhang
Xinchao Peng
Yijun Xu
Jianxun Li
Yuhua Xie
Shirong Fan
Jia Zhou
Wenjie Yang
Original Assignee
Gree Electric Appliances, Inc. Of Zhuhai
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gree Electric Appliances, Inc. Of Zhuhai filed Critical Gree Electric Appliances, Inc. Of Zhuhai
Publication of PL3584667T3 publication Critical patent/PL3584667T3/pl

Links

Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/26—Current mirrors
    • G05F3/262—Current mirrors using field-effect transistors only
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/22—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the bipolar type only
    • G05F3/222—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the bipolar type only with compensation for device parameters, e.g. Early effect, gain, manufacturing process, or external variations, e.g. temperature, loading, supply voltage
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10—Regulating voltage or current 
    • G05F1/46—Regulating voltage or current  wherein the variable actually regulated by the final control device is DC
    • G05F1/56—Regulating voltage or current  wherein the variable actually regulated by the final control device is DC using semiconductor devices in series with the load as final control devices
    • G05F1/565—Regulating voltage or current  wherein the variable actually regulated by the final control device is DC using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor
    • G05F1/567—Regulating voltage or current  wherein the variable actually regulated by the final control device is DC using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor for temperature compensation
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • G05F3/242—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Nonlinear Science (AREA)
  • Control Of Electrical Variables (AREA)
  • Amplifiers (AREA)
PL17896753.5T 2017-02-16 2017-10-19 Obwód napięcia odniesienia o niskim dryfie temperaturowym PL3584667T3 (pl)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201710083188.4A CN106774594B (zh) 2017-02-16 2017-02-16 低温漂基准电压电路
PCT/CN2017/106875 WO2018149166A1 (zh) 2017-02-16 2017-10-19 低温漂基准电压电路

Publications (1)

Publication Number Publication Date
PL3584667T3 true PL3584667T3 (pl) 2024-02-05

Family

ID=58958641

Family Applications (1)

Application Number Title Priority Date Filing Date
PL17896753.5T PL3584667T3 (pl) 2017-02-16 2017-10-19 Obwód napięcia odniesienia o niskim dryfie temperaturowym

Country Status (8)

Country Link
US (1) US10831227B2 (pl)
EP (1) EP3584667B1 (pl)
CN (1) CN106774594B (pl)
ES (1) ES2959784T3 (pl)
FI (1) FI3584667T3 (pl)
PL (1) PL3584667T3 (pl)
PT (1) PT3584667T (pl)
WO (1) WO2018149166A1 (pl)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106774594B (zh) * 2017-02-16 2018-02-16 珠海格力电器股份有限公司 低温漂基准电压电路
CN114690842B (zh) * 2020-12-29 2024-07-02 圣邦微电子（北京）股份有限公司 一种用于偏置双极型晶体管的电流源电路
CN112817362B (zh) * 2020-12-31 2022-05-24 广东大普通信技术股份有限公司 一种低温度系数参考电流及电压产生电路
CN115220517B (zh) * 2021-04-19 2024-01-16 中国科学院微电子研究所 基于pmos温度补偿特性基准电压产生电路及设计方法和装置
CN115220518B (zh) * 2021-04-19 2024-03-12 中国科学院微电子研究所 基于nmos温度补偿特性基准电压产生电路及设计方法和装置
CN114546019B (zh) * 2021-08-24 2022-12-23 南京航空航天大学 一种温度系数可调的基准电压源
CN115877908B (zh) * 2023-03-02 2023-04-28 盈力半导体(上海)有限公司 一种带隙电压基准电路及其二阶非线性校正电路和芯片
CN116559522B (zh) * 2023-07-11 2023-09-15 苏州锴威特半导体股份有限公司 一种低温漂的低压检测电路
CN118051088B (zh) * 2024-04-16 2024-06-21 成都电科星拓科技有限公司 一种电压电流复用带隙基准源
US12608032B2 (en) 2024-05-09 2026-04-21 Macronix International Co., Ltd. Complementary metal-oxide-semiconductor (CMOS) voltage reference generator
CN120973171A (zh) * 2024-07-29 2025-11-18 伏达半导体(合肥)股份有限公司 带隙基准电路、基准电压源和基准电压生成方法

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US6441680B1 (en) * 2001-03-29 2002-08-27 The Hong Kong University Of Science And Technology CMOS voltage reference
JP2008015925A (ja) * 2006-07-07 2008-01-24 Matsushita Electric Ind Co Ltd 基準電圧発生回路
US7586357B2 (en) * 2007-01-12 2009-09-08 Texas Instruments Incorporated Systems for providing a constant resistance
TWI351590B (en) * 2007-12-05 2011-11-01 Ind Tech Res Inst Voltage generate apparatus
TW200928648A (en) * 2007-12-20 2009-07-01 Airoha Tech Corp Voltage reference circuit
TW201003356A (en) * 2008-07-10 2010-01-16 Mobien Corp Resistor device and circuit using the same
JP2010219486A (ja) * 2009-03-19 2010-09-30 Renesas Electronics Corp 中間電位発生回路
CN101598954B (zh) 2009-05-09 2012-01-18 南京微盟电子有限公司 一种增强型mos管基准电压源电路
CN102253684B (zh) * 2010-06-30 2013-06-26 中国科学院电子学研究所 一种采用电流相减技术的带隙基准电路
KR20120051442A (ko) 2010-11-12 2012-05-22 삼성전기주식회사 선택적 온도 계수를 가지는 전류원 회로
CN102279611B (zh) * 2011-05-11 2013-06-12 电子科技大学 一种可变曲率补偿的带隙电压基准源
TWI459173B (zh) * 2012-01-31 2014-11-01 Fsp Technology Inc 參考電壓產生電路及參考電壓產生方法
CN103246310B (zh) * 2013-05-07 2015-07-22 上海华力微电子有限公司 Cmos带隙基准源电路
JP6215652B2 (ja) * 2013-10-28 2017-10-18 エスアイアイ・セミコンダクタ株式会社 基準電圧発生装置
CN105892548B (zh) 2014-05-07 2017-04-26 北京同方微电子有限公司 一种具有温度补偿功能的基准电压产生电路
EP2977849B8 (en) * 2014-07-24 2025-08-06 Renesas Design (UK) Limited High-voltage to low-voltage low dropout regulator with self contained voltage reference
CN104793689A (zh) 2015-04-10 2015-07-22 无锡中星微电子有限公司 基准电压源电路
CN104977970A (zh) 2015-07-08 2015-10-14 北京兆易创新科技股份有限公司 一种无运放高电源抑制比带隙基准源电路
CN204808102U (zh) 2015-07-08 2015-11-25 北京兆易创新科技股份有限公司 一种无运放高电源抑制比带隙基准源电路
CN205405320U (zh) * 2016-03-02 2016-07-27 上海南麟电子股份有限公司 一种带阻抗调节的耗尽管基准电路
CN206479868U (zh) * 2017-02-16 2017-09-08 珠海格力电器股份有限公司 低温漂基准电压电路
CN106774594B (zh) 2017-02-16 2018-02-16 珠海格力电器股份有限公司 低温漂基准电压电路

Also Published As

Publication number Publication date
EP3584667B1 (en) 2023-08-30
CN106774594B (zh) 2018-02-16
FI3584667T3 (fi) 2023-10-18
PT3584667T (pt) 2023-10-24
WO2018149166A1 (zh) 2018-08-23
US20190361476A1 (en) 2019-11-28
CN106774594A (zh) 2017-05-31
EP3584667A4 (en) 2020-08-19
ES2959784T3 (es) 2024-02-28
US10831227B2 (en) 2020-11-10
EP3584667A1 (en) 2019-12-25

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