PL3481160T3 - Urządzenie w postaci źródła zasilania wysokiej częstotliwości i sposób sterowania urządzeniem w postaci źródła zasilania wysokiej częstotliwości - Google Patents
Urządzenie w postaci źródła zasilania wysokiej częstotliwości i sposób sterowania urządzeniem w postaci źródła zasilania wysokiej częstotliwościInfo
- Publication number
- PL3481160T3 PL3481160T3 PL16908208T PL16908208T PL3481160T3 PL 3481160 T3 PL3481160 T3 PL 3481160T3 PL 16908208 T PL16908208 T PL 16908208T PL 16908208 T PL16908208 T PL 16908208T PL 3481160 T3 PL3481160 T3 PL 3481160T3
- Authority
- PL
- Poland
- Prior art keywords
- power supply
- high frequency
- frequency power
- controlling
- supply
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
- H01J37/32183—Matching circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
- H01J37/32155—Frequency modulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32266—Means for controlling power transmitted to the plasma
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
- H03H7/30—Time-delay networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
- H03H7/38—Impedance-matching networks
- H03H7/40—Automatic matching of load impedance to source impedance
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
- H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H2242/00—Auxiliary systems
- H05H2242/20—Power circuits
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016136058A JP6157036B1 (ja) | 2016-07-08 | 2016-07-08 | 高周波電源装置、及び高周波電源装置の制御方法 |
| EP16908208.8A EP3481160B1 (en) | 2016-07-08 | 2016-09-07 | High-frequency power supply device, and control method for high-frequency power supply device |
| PCT/JP2016/076299 WO2018008164A1 (ja) | 2016-07-08 | 2016-09-07 | 高周波電源装置、及び高周波電源装置の制御方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| PL3481160T3 true PL3481160T3 (pl) | 2021-04-19 |
Family
ID=59273040
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PL16908208T PL3481160T3 (pl) | 2016-07-08 | 2016-09-07 | Urządzenie w postaci źródła zasilania wysokiej częstotliwości i sposób sterowania urządzeniem w postaci źródła zasilania wysokiej częstotliwości |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US10475624B2 (pl) |
| EP (1) | EP3481160B1 (pl) |
| JP (1) | JP6157036B1 (pl) |
| KR (1) | KR101921457B1 (pl) |
| CN (1) | CN108476583B (pl) |
| PL (1) | PL3481160T3 (pl) |
| TW (1) | TWI643529B (pl) |
| WO (1) | WO2018008164A1 (pl) |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019003345A1 (ja) * | 2017-06-28 | 2019-01-03 | 株式会社日立国際電気 | 高周波電源装置及びそれを用いたプラズマ処理装置 |
| WO2019103134A1 (ja) * | 2017-11-27 | 2019-05-31 | アダマンド並木精密宝石株式会社 | インピーダンス整合回路 |
| KR102126937B1 (ko) * | 2018-12-03 | 2020-06-25 | 주식회사 뉴파워 프라즈마 | 역방향 전력 저감 방법 및 이를 이용한 플라즈마 전력 장치 |
| JP2020158814A (ja) * | 2019-03-26 | 2020-10-01 | 東京エレクトロン株式会社 | 成膜装置および成膜方法 |
| CN114424319B (zh) | 2019-08-19 | 2024-04-30 | 应用材料公司 | 用于在多个频率下控制rf参数的方法及装置 |
| US10741363B1 (en) * | 2019-10-08 | 2020-08-11 | Mks Instruments, Inc. | Extremum seeking control apparatus and method for automatic frequency tuning for RF impedance matching |
| JP7485329B2 (ja) * | 2019-12-06 | 2024-05-16 | 学校法人 龍谷大学 | マイクロ波増幅回路とインピーダンス整合回路を有する回路、及びそれを用いたマイクロ波加熱装置 |
| JP7140853B2 (ja) * | 2020-01-30 | 2022-09-21 | 株式会社日立ハイテク | プラズマ処理装置、およびプラズマ処理方法 |
| DE102020104090A1 (de) * | 2020-02-17 | 2021-08-19 | Comet Ag | Hochfrequenzverstärker-Anordnung für einen Hochfrequenzgenerator |
| US12131886B2 (en) | 2020-07-08 | 2024-10-29 | Lam Research Corporation | Systems and methods for extracting process control information from radiofrequency supply system of plasma processing system |
| WO2022025115A1 (ja) | 2020-07-30 | 2022-02-03 | ゼネラルソリューションズ株式会社 | 電磁波加熱装置 |
| DE102021129565A1 (de) * | 2021-11-12 | 2023-05-17 | TRUMPF Hüttinger GmbH + Co. KG | Verfahren und vorrichtung zum erhitzen eines mediums unter verwendung eines hf-signals |
| CN118043910A (zh) * | 2021-11-16 | 2024-05-14 | 法国甫托尼公司 | 具有重水减速的中子源及在热中子成像中的应用 |
| JP7808746B2 (ja) * | 2022-02-16 | 2026-01-30 | パナソニックＩｐマネジメント株式会社 | 高周波処理装置 |
| CN120188575B (zh) * | 2022-11-22 | 2025-11-11 | 东京毅力科创株式会社 | 等离子体处理装置、电源系统和控制生成源频率的方法 |
| TWI842301B (zh) * | 2022-12-28 | 2024-05-11 | 瑞昱半導體股份有限公司 | 阻抗轉換電路和射頻功率可靠度測試系統 |
| CN116075031B (zh) * | 2023-02-13 | 2025-10-31 | 天津大学 | 一种基于反射系数测量的自动阻抗匹配系统及方法及应用 |
| CN116759284A (zh) * | 2023-06-30 | 2023-09-15 | 北京北方华创微电子装备有限公司 | 半导体工艺设备及最优阻抗值获取方法、扫频匹配方法 |
| CN120164771B (zh) * | 2023-12-15 | 2025-12-12 | 北京北方华创微电子装备有限公司 | 射频源装置及其阻抗匹配方法、半导体工艺设备 |
| CN117478164B (zh) * | 2023-12-22 | 2024-04-09 | 深圳市瀚强科技股份有限公司 | 射频保护电路及相关装置 |
| CN119920667B (zh) * | 2025-01-20 | 2025-10-28 | 青岛思锐智能科技股份有限公司 | 一种功率调节方法、装置、电子设备及存储介质 |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3977114B2 (ja) * | 2002-03-25 | 2007-09-19 | 株式会社ルネサステクノロジ | プラズマ処理装置 |
| JP4799947B2 (ja) | 2005-02-25 | 2011-10-26 | 株式会社ダイヘン | 高周波電源装置および高周波電源の制御方法 |
| JP4739793B2 (ja) * | 2005-03-31 | 2011-08-03 | 株式会社ダイヘン | 高周波電源装置 |
| US7839223B2 (en) * | 2008-03-23 | 2010-11-23 | Advanced Energy Industries, Inc. | Method and apparatus for advanced frequency tuning |
| JP2010027587A (ja) | 2008-07-18 | 2010-02-04 | Kohnan Electronic Corp | 高周波応用装置 |
| PL2416629T3 (pl) * | 2009-08-07 | 2021-11-02 | Kyosan Electric Mfg. Co., Ltd. | Sposób sterowania impulsowego mocą o wysokiej częstotliwości oraz urządzenie w postaci zasilacza impulsowego o wysokiej częstotliwości |
| WO2012094416A1 (en) | 2011-01-04 | 2012-07-12 | Advanced Energy Industries, Inc. | System level power delivery to a plasma processing load |
| US8576013B2 (en) | 2011-12-29 | 2013-11-05 | Mks Instruments, Inc. | Power distortion-based servo control systems for frequency tuning RF power sources |
| GB2500708B (en) * | 2012-03-30 | 2016-04-13 | Nujira Ltd | Determination of envelope shaping and signal path predistortion of an ET amplification stage using device characterisation data |
| JP5534365B2 (ja) * | 2012-06-18 | 2014-06-25 | 株式会社京三製作所 | 高周波電力供給装置、及び反射波電力制御方法 |
| US8781415B1 (en) * | 2013-02-07 | 2014-07-15 | Mks Instruments, Inc. | Distortion correction based feedforward control systems and methods for radio frequency power sources |
| CN105393432B (zh) * | 2013-07-31 | 2018-12-28 | 松下电器产业株式会社 | 无线电力传输系统以及送电装置 |
| CN103632927B (zh) | 2013-12-19 | 2016-03-16 | 中微半导体设备(上海)有限公司 | 等离子体刻蚀系统的阻抗匹配方法 |
| CN105826154B (zh) * | 2015-01-06 | 2017-12-19 | 北京北方华创微电子装备有限公司 | 针对脉冲射频电源的阻抗匹配方法及装置 |
-
2016
- 2016-07-08 JP JP2016136058A patent/JP6157036B1/ja active Active
- 2016-09-07 KR KR1020187013981A patent/KR101921457B1/ko active Active
- 2016-09-07 EP EP16908208.8A patent/EP3481160B1/en active Active
- 2016-09-07 WO PCT/JP2016/076299 patent/WO2018008164A1/ja not_active Ceased
- 2016-09-07 CN CN201680072892.3A patent/CN108476583B/zh active Active
- 2016-09-07 US US16/314,967 patent/US10475624B2/en active Active
- 2016-09-07 PL PL16908208T patent/PL3481160T3/pl unknown
-
2017
- 2017-04-18 TW TW106112937A patent/TWI643529B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| CN108476583A (zh) | 2018-08-31 |
| US10475624B2 (en) | 2019-11-12 |
| EP3481160A4 (en) | 2020-02-26 |
| JP2018006294A (ja) | 2018-01-11 |
| EP3481160A1 (en) | 2019-05-08 |
| KR20180067670A (ko) | 2018-06-20 |
| TW201822594A (zh) | 2018-06-16 |
| EP3481160B1 (en) | 2020-11-25 |
| CN108476583B (zh) | 2019-05-21 |
| KR101921457B1 (ko) | 2018-11-22 |
| WO2018008164A1 (ja) | 2018-01-11 |
| TWI643529B (zh) | 2018-12-01 |
| US20190311885A1 (en) | 2019-10-10 |
| JP6157036B1 (ja) | 2017-07-05 |
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