PL3231003T3 - Urządzenie mające dwa bloki końcowe, zespół i układ rozpylający zawierający ten zespół, oraz sposób dostarczania energii rf do zespołu tarczy przy użyciu wspomnianego urządzenia lub zespołu - Google Patents

Urządzenie mające dwa bloki końcowe, zespół i układ rozpylający zawierający ten zespół, oraz sposób dostarczania energii rf do zespołu tarczy przy użyciu wspomnianego urządzenia lub zespołu

Info

Publication number
PL3231003T3
PL3231003T3 PL15807874T PL15807874T PL3231003T3 PL 3231003 T3 PL3231003 T3 PL 3231003T3 PL 15807874 T PL15807874 T PL 15807874T PL 15807874 T PL15807874 T PL 15807874T PL 3231003 T3 PL3231003 T3 PL 3231003T3
Authority
PL
Poland
Prior art keywords
assembly
providing
power
same
end blocks
Prior art date
Application number
PL15807874T
Other languages
English (en)
Inventor
Wilmert De Bosscher
Ivan Van De Putte
Original Assignee
Soleras Advanced Coatings Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soleras Advanced Coatings Bv filed Critical Soleras Advanced Coatings Bv
Publication of PL3231003T3 publication Critical patent/PL3231003T3/pl

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3435—Target holders (includes backing plates and endblocks)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3444—Associated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3464—Operating strategies
    • H01J37/347—Thickness uniformity of coated layers or desired profile of target erosion

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
PL15807874T 2014-12-08 2015-12-08 Urządzenie mające dwa bloki końcowe, zespół i układ rozpylający zawierający ten zespół, oraz sposób dostarczania energii rf do zespołu tarczy przy użyciu wspomnianego urządzenia lub zespołu PL3231003T3 (pl)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP14196851.1A EP3032565A1 (en) 2014-12-08 2014-12-08 A device having two end blocks, an assembly and a sputter system comprising same, and a method of providing RF power to a target tube using said device or assembly
PCT/EP2015/079040 WO2016091915A1 (en) 2014-12-08 2015-12-08 A device having two end blocks, an assembly and a sputter system comprising same, and a method of providing rf power to a target assembly using said device or assembly
EP15807874.1A EP3231003B1 (en) 2014-12-08 2015-12-08 A device having two end blocks, an assembly and a sputter system comprising same, and a method of providing rf power to a target assembly using said device or assembly

Publications (1)

Publication Number Publication Date
PL3231003T3 true PL3231003T3 (pl) 2021-07-19

Family

ID=52013935

Family Applications (1)

Application Number Title Priority Date Filing Date
PL15807874T PL3231003T3 (pl) 2014-12-08 2015-12-08 Urządzenie mające dwa bloki końcowe, zespół i układ rozpylający zawierający ten zespół, oraz sposób dostarczania energii rf do zespołu tarczy przy użyciu wspomnianego urządzenia lub zespołu

Country Status (8)

Country Link
US (1) US10163611B2 (pl)
EP (2) EP3032565A1 (pl)
JP (1) JP6629857B2 (pl)
KR (1) KR102249672B1 (pl)
CN (1) CN107004564B (pl)
HU (1) HUE053915T2 (pl)
PL (1) PL3231003T3 (pl)
WO (1) WO2016091915A1 (pl)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016033475A1 (en) * 2014-08-29 2016-03-03 Sputtering Components, Inc. Dual power feed rotary sputtering cathode
GB201505528D0 (en) * 2015-03-31 2015-05-13 Gencoa Ltd Rotational device-III
US10374551B2 (en) 2016-02-12 2019-08-06 Muons, Inc. Subcritical-voltage magnetron RF power source
US10426022B2 (en) 2017-08-28 2019-09-24 Muons, Inc. Pulsed power generation using magnetron RF source with internal modulation
BE1026859B1 (nl) * 2018-10-22 2020-07-14 Soleras Advanced Coatings Bv Magnetron met geïntegreerd circuit voor het monitoren en controle
TWI888573B (zh) * 2020-06-24 2025-07-01 日商東京威力科創股份有限公司 基板處理裝置
CN112281123B (zh) * 2020-10-23 2022-11-11 业成科技（成都）有限公司 溅镀系统
KR102784487B1 (ko) * 2022-01-20 2025-03-21 주식회사 케이씨엠씨 회전형 캐소드 및 이를 구비한 스퍼터 장치
KR102891132B1 (ko) * 2022-01-20 2025-11-26 주식회사 케이씨엠씨 Rf 전원용 회전형 캐소드 및 이를 구비한 스퍼터 장치
JP2024007812A (ja) * 2022-07-06 2024-01-19 パナソニックＩｐマネジメント株式会社 プラズマ処理装置
US12400830B2 (en) 2023-08-07 2025-08-26 Bühler AG RF sputtering of multiple electrodes with optimized plasma coupling through the implementation of capacitive and inductive components
CN117512553B (zh) * 2024-01-03 2024-04-02 上海米蜂激光科技有限公司 一种微晶玻璃真空镀膜方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5096562A (en) 1989-11-08 1992-03-17 The Boc Group, Inc. Rotating cylindrical magnetron structure for large area coating
US5200049A (en) 1990-08-10 1993-04-06 Viratec Thin Films, Inc. Cantilever mount for rotating cylindrical magnetrons
US5620577A (en) 1993-12-30 1997-04-15 Viratec Thin Films, Inc. Spring-loaded mount for a rotatable sputtering cathode
ZA956811B (en) * 1994-09-06 1996-05-14 Boc Group Inc Dual cylindrical target magnetron with multiple anodes
US5589737A (en) 1994-12-06 1996-12-31 Lam Research Corporation Plasma processor for large workpieces
JP4120974B2 (ja) * 1997-06-17 2008-07-16 キヤノンアネルバ株式会社 薄膜作製方法および薄膜作製装置
US6677828B1 (en) 2000-08-17 2004-01-13 Eni Technology, Inc. Method of hot switching a plasma tuner
JP2002173762A (ja) * 2000-09-29 2002-06-21 Sanyo Shinku Kogyo Kk 透明導電膜等の成膜方法とその装置
US6736948B2 (en) 2002-01-18 2004-05-18 Von Ardenne Anlagentechnik Gmbh Cylindrical AC/DC magnetron with compliant drive system and improved electrical and thermal isolation
US20050106873A1 (en) * 2003-08-15 2005-05-19 Hoffman Daniel J. Plasma chamber having multiple RF source frequencies
JP5301340B2 (ja) * 2009-04-16 2013-09-25 住友重機械工業株式会社 スパッタリング装置および成膜方法
CA2791288A1 (en) * 2010-03-31 2011-10-06 Mustang Vacuum Systems, Llc Cylindrical rotating magnetron sputtering cathode device and method of depositing material using radio frequency emissions
GB201200574D0 (en) * 2012-01-13 2012-02-29 Gencoa Ltd In-vacuum rotational device
US9281436B2 (en) 2012-12-28 2016-03-08 Solarcity Corporation Radio-frequency sputtering system with rotary target for fabricating solar cells

Also Published As

Publication number Publication date
EP3231003A1 (en) 2017-10-18
JP2018501404A (ja) 2018-01-18
JP6629857B2 (ja) 2020-01-15
CN107004564B (zh) 2020-01-24
CN107004564A (zh) 2017-08-01
EP3231003B1 (en) 2021-02-03
KR102249672B1 (ko) 2021-05-11
US20170330736A1 (en) 2017-11-16
WO2016091915A1 (en) 2016-06-16
HUE053915T2 (hu) 2021-07-28
EP3032565A1 (en) 2016-06-15
US10163611B2 (en) 2018-12-25
KR20170093910A (ko) 2017-08-16

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