PL3220522T3 - Obwód sterownika bramkowego z separacją galwaniczną wysokiej częstotliwości oraz sposób sterowania obwodem bramkowym - Google Patents

Obwód sterownika bramkowego z separacją galwaniczną wysokiej częstotliwości oraz sposób sterowania obwodem bramkowym

Info

Publication number
PL3220522T3
PL3220522T3 PL15880026T PL15880026T PL3220522T3 PL 3220522 T3 PL3220522 T3 PL 3220522T3 PL 15880026 T PL15880026 T PL 15880026T PL 15880026 T PL15880026 T PL 15880026T PL 3220522 T3 PL3220522 T3 PL 3220522T3
Authority
PL
Poland
Prior art keywords
frequency
driving method
gate
circuit
driver circuit
Prior art date
Application number
PL15880026T
Other languages
English (en)
Inventor
Itsuo Yuzurihara
Hiroshi KUNITAMA
Original Assignee
Kyosan Electric Mfg. Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyosan Electric Mfg. Co., Ltd. filed Critical Kyosan Electric Mfg. Co., Ltd.
Publication of PL3220522T3 publication Critical patent/PL3220522T3/pl

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16Modifications for eliminating interference voltages or currents
    • H03K17/161Modifications for eliminating interference voltages or currents in field-effect transistor switches
    • H03K17/162Modifications for eliminating interference voltages or currents in field-effect transistor switches without feedback from the output circuit to the control circuit
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00Details of apparatus for conversion
    • H02M1/08Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/567Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6871Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K7/00Modulating pulses with a continuously-variable modulating signal
    • H03K7/08Duration or width modulation ; Duty cycle modulation

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Power Conversion In General (AREA)
  • Electronic Switches (AREA)
PL15880026T 2015-01-30 2015-02-20 Obwód sterownika bramkowego z separacją galwaniczną wysokiej częstotliwości oraz sposób sterowania obwodem bramkowym PL3220522T3 (pl)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2015016741A JP5930560B1 (ja) 2015-01-30 2015-01-30 高周波絶縁ゲートドライバ回路、及びゲート回路駆動方法
PCT/JP2015/054726 WO2016121131A1 (ja) 2015-01-30 2015-02-20 高周波絶縁ゲートドライバ回路、及びゲート回路駆動方法
EP15880026.8A EP3220522B1 (en) 2015-01-30 2015-02-20 High-frequency-isolation gate driver circuit and gate circuit driving method

Publications (1)

Publication Number Publication Date
PL3220522T3 true PL3220522T3 (pl) 2019-08-30

Family

ID=56102904

Family Applications (1)

Application Number Title Priority Date Filing Date
PL15880026T PL3220522T3 (pl) 2015-01-30 2015-02-20 Obwód sterownika bramkowego z separacją galwaniczną wysokiej częstotliwości oraz sposób sterowania obwodem bramkowym

Country Status (8)

Country Link
US (1) US10038435B2 (pl)
EP (1) EP3220522B1 (pl)
JP (1) JP5930560B1 (pl)
KR (1) KR101860693B1 (pl)
CN (1) CN107210667B (pl)
PL (1) PL3220522T3 (pl)
TW (1) TWI597942B (pl)
WO (1) WO2016121131A1 (pl)

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US10720913B1 (en) 2019-05-28 2020-07-21 Infineon Technologies Austria Ag Integrated failsafe pulldown circuit for GaN switch
TWI692194B (zh) * 2019-06-27 2020-04-21 朋程科技股份有限公司 交流發電機以及整流裝置
CN110545611B (zh) * 2019-08-09 2021-01-08 北京纳米维景科技有限公司 一种实现栅控隔离的方法及栅极控制电路
US10958268B1 (en) * 2019-09-04 2021-03-23 Infineon Technologies Austria Ag Transformer-based driver for power switches
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US10979032B1 (en) 2020-01-08 2021-04-13 Infineon Technologies Austria Ag Time-programmable failsafe pulldown circuit for GaN switch
CN111509954A (zh) * 2020-05-26 2020-08-07 深圳市雷能混合集成电路有限公司 一种脉宽调制信号的修正控制方法、装置和开关电源
US20220140826A1 (en) * 2020-10-29 2022-05-05 Texas Instruments Incorporated Temperature control for power devices
WO2022096907A1 (ja) * 2020-11-06 2022-05-12 日産自動車株式会社 共振型電力変換装置
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TWI792175B (zh) * 2021-02-04 2023-02-11 康舒科技股份有限公司 電源供應裝置及其控制方法
US11264985B1 (en) * 2021-03-04 2022-03-01 Aes Global Holdings Pte Ltd. Bipolar pulsed-voltage gate driver
CN113098458B (zh) * 2021-03-31 2024-06-25 黄山学院 用于高压栅驱动芯片的高共模瞬态抑制差分信号接收电路
KR102853299B1 (ko) * 2021-08-10 2025-08-29 한국전기연구원 전력용 반도체 소자 고속 구동 회로 및 시스템
CN113794469B (zh) * 2021-09-03 2023-09-22 中国科学院电工研究所 一种倍频栅极驱动电路及其倍频控制方法
GB2612851B (en) 2021-11-16 2024-08-21 Iceye Oy Radio frequency switch driver
DE102022103550B4 (de) * 2022-02-15 2024-01-04 Woco Gmbh & Co. Kg Ansteuerschaltung für einen Elektroabscheider
US11990898B2 (en) * 2022-02-23 2024-05-21 Hamilton Sundstrand Corporation Parasitic immune isolated drive
US12176887B2 (en) 2022-10-17 2024-12-24 Infineon Technologies Austria Ag Transformer-based drive for GaN devices
US12368383B2 (en) 2023-03-13 2025-07-22 Infineon Technologies Austria Ag Isolated DC/DC converter and power electronics system
JPWO2025022733A1 (pl) * 2023-07-25 2025-01-30
TWI873935B (zh) 2023-10-24 2025-02-21 能創半導體股份有限公司 訊號延遲設定電路、隔離式積體電路及電源轉換電路系統
CN117559780A (zh) * 2023-11-23 2024-02-13 深圳市恒运昌真空技术有限公司 一种推挽式隔离逆变驱动电路
CN118300387B (zh) * 2024-02-23 2025-07-04 东莞市晟鼎精密仪器有限公司 一种用于远程等离子源的隔离驱动电路

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Also Published As

Publication number Publication date
EP3220522A4 (en) 2018-09-26
TWI597942B (zh) 2017-09-01
JP5930560B1 (ja) 2016-06-08
CN107210667B (zh) 2018-05-04
JP2016144258A (ja) 2016-08-08
CN107210667A (zh) 2017-09-26
EP3220522B1 (en) 2019-05-01
WO2016121131A1 (ja) 2016-08-04
KR20170097216A (ko) 2017-08-25
KR101860693B1 (ko) 2018-05-23
EP3220522A1 (en) 2017-09-20
TW201628338A (zh) 2016-08-01
US20170331471A1 (en) 2017-11-16
US10038435B2 (en) 2018-07-31

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