PL2928075T3 - Wzmacniacz klasy d - Google Patents

Wzmacniacz klasy d

Info

Publication number
PL2928075T3
PL2928075T3 PL13891690T PL13891690T PL2928075T3 PL 2928075 T3 PL2928075 T3 PL 2928075T3 PL 13891690 T PL13891690 T PL 13891690T PL 13891690 T PL13891690 T PL 13891690T PL 2928075 T3 PL2928075 T3 PL 2928075T3
Authority
PL
Poland
Prior art keywords
amplifier
class
Prior art date
Application number
PL13891690T
Other languages
English (en)
Inventor
Itsuo Yuzurihara
Satoshi Aikawa
Ryosuke OHMA
Original Assignee
Kyosan Electric Mfg. Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyosan Electric Mfg. Co., Ltd. filed Critical Kyosan Electric Mfg. Co., Ltd.
Publication of PL2928075T3 publication Critical patent/PL2928075T3/pl

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
    • H03F1/083—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements in transistor amplifiers
    • H03F1/086—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements in transistor amplifiers with FET's
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • H03F1/307—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in push-pull amplifiers
    • H03F1/308—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in push-pull amplifiers using MOSFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/52—Circuit arrangements for protecting such amplifiers
    • H03F1/523—Circuit arrangements for protecting such amplifiers for amplifiers using field-effect devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/211—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/217—Class D power amplifiers; Switching amplifiers
    • H03F3/2171—Class D power amplifiers; Switching amplifiers with field-effect devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/217—Class D power amplifiers; Switching amplifiers
    • H03F3/2173—Class D power amplifiers; Switching amplifiers of the bridge type
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/30—Single-ended push-pull [SEPP] amplifiers; Phase-splitters therefor
    • H03F3/3001—Single-ended push-pull [SEPP] amplifiers; Phase-splitters therefor with field-effect transistors
    • H03F3/3061—Bridge type, i.e. two complementary controlled SEPP output stages
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/26—Plasma torches
    • H05H1/32—Plasma torches using an arc
    • H05H1/34—Details, e.g. electrodes, nozzles
    • H05H1/36—Circuit arrangements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/33—Bridge form coupled amplifiers; H-form coupled amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/351—Pulse width modulation being used in an amplifying circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/459—Ripple reduction circuitry being used in an amplifying circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/20—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F2203/21—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F2203/211—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
    • H03F2203/21106—An input signal being distributed in parallel over the inputs of a plurality of power amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/20—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F2203/21—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F2203/211—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
    • H03F2203/21112—A filter circuit being added at the input of a power amplifier stage
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/217—Class D power amplifiers; Switching amplifiers

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Amplifiers (AREA)
PL13891690T 2013-08-22 2013-12-26 Wzmacniacz klasy d PL2928075T3 (pl)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2013172073A JP5578745B1 (ja) 2013-08-22 2013-08-22 Ｄ級増幅器
EP13891690.3A EP2928075B1 (en) 2013-08-22 2013-12-26 Class-d amplifier
PCT/JP2013/084819 WO2015025440A1 (ja) 2013-08-22 2013-12-26 Ｄ級増幅器

Publications (1)

Publication Number Publication Date
PL2928075T3 true PL2928075T3 (pl) 2022-01-31

Family

ID=51579111

Family Applications (1)

Application Number Title Priority Date Filing Date
PL13891690T PL2928075T3 (pl) 2013-08-22 2013-12-26 Wzmacniacz klasy d

Country Status (9)

Country Link
US (1) US9590565B2 (pl)
EP (1) EP2928075B1 (pl)
JP (1) JP5578745B1 (pl)
KR (1) KR101615080B1 (pl)
CN (1) CN105144577B (pl)
DE (1) DE13891690T1 (pl)
PL (1) PL2928075T3 (pl)
TW (1) TWI491170B (pl)
WO (1) WO2015025440A1 (pl)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5788616B1 (ja) * 2015-02-04 2015-10-07 株式会社京三製作所 高周波電源装置、及びデュアルカソード用電源
WO2017190133A1 (en) * 2016-04-29 2017-11-02 Weather Detection Systems, Inc. Fast switched pulsed radio frequency amplifiers
US11038477B2 (en) * 2017-06-30 2021-06-15 Airily Technologies, LLC High gain resonant amplifier for resistive output impedance
US10992265B2 (en) * 2019-03-29 2021-04-27 Eta Wireless, Inc. Multi-stage pulse shaping network
JP6826165B1 (ja) * 2019-08-06 2021-02-03 株式会社京三製作所 パルス化高周波モニタ
JP6953566B2 (ja) * 2020-02-14 2021-10-27 株式会社京三製作所 高周波電源装置及びその出力制御方法
US11159124B2 (en) 2020-03-09 2021-10-26 Biosense Webster (Israel) Ltd. Sine-wave generation using pulsed D-class amplifier
WO2021200166A1 (ja) * 2020-03-30 2021-10-07 ローム株式会社 半導体装置
KR102349542B1 (ko) * 2021-08-23 2022-01-11 도안파비스(주) 디지털 파워 앰프 출력 회로 및 디지털 파워 앰프 출력 회로를 기반으로 신호 증폭 방법
CN114665701B (zh) * 2022-03-30 2025-07-11 西北工业大学 获取桥式变换器的吸收电路参数的方法、装置和电路
US12573993B2 (en) 2022-10-06 2026-03-10 Murata Manufacturing Co., Ltd. Pulse-shaping networks with coupled magnetics

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5479134A (en) 1993-09-20 1995-12-26 Rohm Co., Ltd. Power amplifier circuit for audio signal and audio device using the same
TW324347U (en) 1997-08-26 1998-01-01 Treco Internat Co Ltd Foldable single-wheel carrier
WO1999059241A2 (en) * 1998-05-11 1999-11-18 Toccata Technology Aps A method of reducing distortion and noise of square-wave pulses, a circuit for generating minimally distorted pulses and use of method and circuit
YU49125B (sh) * 1999-06-29 2004-03-12 Milan Dr. Prokin Mostni pojačivač sa podizačem napona
YU49097B (sh) 1999-11-23 2003-12-31 dr. Milan Prokin Polumostni pojačavač sa podizačem napona
JP3702162B2 (ja) 2000-09-25 2005-10-05 三洋電機株式会社 半導体装置の製造方法
JP2002223132A (ja) * 2001-01-29 2002-08-09 Niigata Seimitsu Kk 音声再生装置および方法
US6778012B2 (en) * 2002-05-13 2004-08-17 Jam Technologies, Llc Polyphase impedance transformation amplifier
JP2006262121A (ja) * 2005-03-17 2006-09-28 Taiyo Yuden Co Ltd デジタルアンプ
EP1968188B1 (de) 2007-03-09 2012-08-08 HÜTTINGER Elektronik GmbH + Co. KG Klasse-D Verstärkeranordnung
TWM324347U (en) * 2007-04-09 2007-12-21 Inventec Besta Co Ltd Audio output circuit with noise suppression
CN102204076A (zh) * 2008-10-27 2011-09-28 莫斯科技株式会社 电力逆转换装置
JP5202354B2 (ja) * 2009-01-22 2013-06-05 キヤノン株式会社 Ｄ級増幅装置
US7994857B2 (en) * 2009-12-23 2011-08-09 Rockford Corporation Dynamic constant power amplifier
EP2562930B1 (en) * 2011-08-25 2015-04-01 Nxp B.V. Class D amplifier and control method

Also Published As

Publication number Publication date
JP5578745B1 (ja) 2014-08-27
KR20150105491A (ko) 2015-09-16
TW201509121A (zh) 2015-03-01
US9590565B2 (en) 2017-03-07
EP2928075B1 (en) 2021-11-10
WO2015025440A1 (ja) 2015-02-26
CN105144577B (zh) 2016-08-31
EP2928075A1 (en) 2015-10-07
US20150333708A1 (en) 2015-11-19
EP2928075A4 (en) 2016-11-09
JP2015041894A (ja) 2015-03-02
DE13891690T1 (de) 2016-01-21
TWI491170B (zh) 2015-07-01
CN105144577A (zh) 2015-12-09
KR101615080B1 (ko) 2016-04-25

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