PL2216424T3 - Metody nanoszenia powłok z przezroczystych tlenków przewodzących z użyciem urządzeń do rozpylania jonowego dual c-mag - Google Patents

Metody nanoszenia powłok z przezroczystych tlenków przewodzących z użyciem urządzeń do rozpylania jonowego dual c-mag

Info

Publication number
PL2216424T3
PL2216424T3 PL10152525T PL10152525T PL2216424T3 PL 2216424 T3 PL2216424 T3 PL 2216424T3 PL 10152525 T PL10152525 T PL 10152525T PL 10152525 T PL10152525 T PL 10152525T PL 2216424 T3 PL2216424 T3 PL 2216424T3
Authority
PL
Poland
Prior art keywords
mag
dual
techniques
transparent conductive
conductive oxide
Prior art date
Application number
PL10152525T
Other languages
English (en)
Inventor
Anton Dietrich
Yiwei Lu
Bryce Corsner
Original Assignee
Guardian Europe S.À.R.L.
Guardian Glass, LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Guardian Europe S.À.R.L., Guardian Glass, LLC filed Critical Guardian Europe S.À.R.L.
Publication of PL2216424T3 publication Critical patent/PL2216424T3/pl

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C23C14/0042—Controlling partial pressure or flow rate of reactive or inert gases with feedback of measurements
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/342—Hollow targets

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Fluid Mechanics (AREA)
  • Physical Vapour Deposition (AREA)
PL10152525T 2009-02-06 2010-02-03 Metody nanoszenia powłok z przezroczystych tlenków przewodzących z użyciem urządzeń do rozpylania jonowego dual c-mag PL2216424T3 (pl)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/320,904 US20100200395A1 (en) 2009-02-06 2009-02-06 Techniques for depositing transparent conductive oxide coatings using dual C-MAG sputter apparatuses
EP10152525.1A EP2216424B1 (en) 2009-02-06 2010-02-03 Techniques for depositing transparent conductive oxide coatings using dual C-MAG sputter apparatuses

Publications (1)

Publication Number Publication Date
PL2216424T3 true PL2216424T3 (pl) 2018-04-30

Family

ID=42173162

Family Applications (1)

Application Number Title Priority Date Filing Date
PL10152525T PL2216424T3 (pl) 2009-02-06 2010-02-03 Metody nanoszenia powłok z przezroczystych tlenków przewodzących z użyciem urządzeń do rozpylania jonowego dual c-mag

Country Status (4)

Country Link
US (1) US20100200395A1 (pl)
EP (2) EP3293282A1 (pl)
ES (1) ES2656429T3 (pl)
PL (1) PL2216424T3 (pl)

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DE102009015737B4 (de) * 2009-03-31 2013-12-12 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Magnetron-Beschichtungsmodul sowie Magnetron-Beschichtungsverfahren
DE102009061065A1 (de) * 2009-06-26 2011-09-29 Von Ardenne Anlagentechnik Gmbh Verfahren zur Beschichtung eines Subtrates in einer Vakuumkammer mit einem rotierenden Magnetron
EP2661514B1 (en) 2011-01-06 2020-06-17 Bühler AG Magnetron assembly and sputtering system comprising the same
DE102011012034A1 (de) * 2011-02-22 2012-08-23 Heraeus Materials Technology Gmbh & Co. Kg Rohrförmiges Sputtertarget
JP6244103B2 (ja) 2012-05-04 2017-12-06 ヴァイアヴィ・ソリューションズ・インコーポレイテッドＶｉａｖｉ Ｓｏｌｕｔｉｏｎｓ Ｉｎｃ． 反応性スパッタ堆積のための方法および反応性スパッタ堆積システム
WO2014031156A1 (en) * 2012-08-24 2014-02-27 Cardinal Cg Company Apparatus for cylindrical magnetron sputtering
US10138541B2 (en) * 2012-08-31 2018-11-27 Kaneka Corporation Method for producing substrate with transparent electrode, and substrate with transparent electrode
KR102101720B1 (ko) * 2012-09-04 2020-04-21 뷔홀러 아게 스퍼터링 장치
DE102014103740B4 (de) * 2014-01-09 2018-11-15 VON ARDENNE Asset GmbH & Co. KG Sputteranordnung und Sputter-Verfahren
WO2016185714A1 (ja) * 2015-05-19 2016-11-24 株式会社アルバック マグネトロンスパッタリング装置用の回転式カソードユニット
CN106595161A (zh) * 2016-10-24 2017-04-26 杨瑞鹏 一种新型pvd旋转靶制造用冷却背管
CN111155062B (zh) * 2019-12-31 2021-12-03 中山市博顿光电科技有限公司 靶材旋转结构、靶材安装结构以及离子源溅射系统
CN114277348B (zh) * 2021-12-27 2023-06-30 晋能清洁能源科技股份公司 Hjt电池生产中操控磁控溅射设备的方法

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US3639151A (en) * 1969-03-13 1972-02-01 United Aircraft Corp Vapor randomization in vacuum deposition of coatings
DE3331707A1 (de) * 1983-09-02 1985-03-21 Leybold-Heraeus GmbH, 5000 Köln Verfahren und vorrichtung zum reaktiven aufstaeuben von verbindungen von metallen und halbleitern
US5317006A (en) * 1989-06-15 1994-05-31 Microelectronics And Computer Technology Corporation Cylindrical magnetron sputtering system
WO1992001081A1 (en) * 1990-07-06 1992-01-23 The Boc Group, Inc. Method and apparatus for co-sputtering and cross-sputtering homogeneous films
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Also Published As

Publication number Publication date
EP2216424A1 (en) 2010-08-11
ES2656429T3 (es) 2018-02-27
EP3293282A1 (en) 2018-03-14
US20100200395A1 (en) 2010-08-12
EP2216424B1 (en) 2017-11-08

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