PL1871928T3 - Sposób wytwarzania warstwy III-N, podłoża zawierające warstwy III-N i zastosowanie takich podłoży w urządzeniach półprzewodnikowych - Google Patents
Sposób wytwarzania warstwy III-N, podłoża zawierające warstwy III-N i zastosowanie takich podłoży w urządzeniach półprzewodnikowychInfo
- Publication number
- PL1871928T3 PL1871928T3 PL06753501T PL06753501T PL1871928T3 PL 1871928 T3 PL1871928 T3 PL 1871928T3 PL 06753501 T PL06753501 T PL 06753501T PL 06753501 T PL06753501 T PL 06753501T PL 1871928 T3 PL1871928 T3 PL 1871928T3
- Authority
- PL
- Poland
- Prior art keywords
- substrates
- layers
- iii
- semiconductor devices
- producing
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
- C30B29/406—Gallium nitride
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/0242—Crystalline insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/02433—Crystal orientation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/915—Separating from substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24355—Continuous and nonuniform or irregular surface on layer or component [e.g., roofing, etc.]
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
- Recrystallisation Techniques (AREA)
- Led Devices (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102005021099A DE102005021099A1 (de) | 2005-05-06 | 2005-05-06 | GaN-Schichten |
| EP06753501.3A EP1871928B1 (en) | 2005-05-06 | 2006-05-05 | Method for producing iii-n layers, substrates comprising iii-n layers and use of such substrates in semiconductor devices |
| PCT/EP2006/004233 WO2006119927A1 (en) | 2005-05-06 | 2006-05-05 | Method for producing iii-n layers, and iii-n layers or iii-n substrates, and devices based thereon |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| PL1871928T3 true PL1871928T3 (pl) | 2014-03-31 |
Family
ID=36764393
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PL06753501T PL1871928T3 (pl) | 2005-05-06 | 2006-05-05 | Sposób wytwarzania warstwy III-N, podłoża zawierające warstwy III-N i zastosowanie takich podłoży w urządzeniach półprzewodnikowych |
| PL11157196T PL2322699T3 (pl) | 2005-05-06 | 2006-05-05 | Sposób wytwarzania podłoży III-N i wolnych warstw III-N |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PL11157196T PL2322699T3 (pl) | 2005-05-06 | 2006-05-05 | Sposób wytwarzania podłoży III-N i wolnych warstw III-N |
Country Status (9)
| Country | Link |
|---|---|
| US (2) | US7998273B2 (pl) |
| EP (2) | EP2322699B1 (pl) |
| JP (2) | JP5258555B2 (pl) |
| KR (2) | KR101472832B1 (pl) |
| CN (2) | CN102268737B (pl) |
| DE (1) | DE102005021099A1 (pl) |
| PL (2) | PL1871928T3 (pl) |
| TW (1) | TWI475598B (pl) |
| WO (1) | WO2006119927A1 (pl) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7723154B1 (en) | 2005-10-19 | 2010-05-25 | North Carolina State University | Methods of forming zinc oxide based II-VI compound semiconductor layers with shallow acceptor conductivities |
| US8740670B2 (en) | 2006-12-28 | 2014-06-03 | Saint-Gobain Ceramics & Plastics, Inc. | Sapphire substrates and methods of making same |
| EP2099955B1 (en) | 2006-12-28 | 2015-09-23 | Saint-Gobain Ceramics and Plastics, Inc. | Sapphire substrates |
| JP5226695B2 (ja) | 2006-12-28 | 2013-07-03 | サン−ゴバン セラミックス アンド プラスティクス，インコーポレイティド | サファイア基板及びその製造方法 |
| KR101159658B1 (ko) | 2006-12-28 | 2012-06-25 | 생-고뱅 세라믹스 앤드 플라스틱스, 인코포레이티드 | 사파이어 기판 연마 방법 |
| EP2304780A1 (en) | 2008-05-21 | 2011-04-06 | Lumenz, Inc. | Zinc-oxide based epitaxial layers and devices |
| US7829376B1 (en) | 2010-04-07 | 2010-11-09 | Lumenz, Inc. | Methods of forming zinc oxide based II-VI compound semiconductor layers with shallow acceptor conductivities |
| US9336989B2 (en) * | 2012-02-13 | 2016-05-10 | Silicon Genesis Corporation | Method of cleaving a thin sapphire layer from a bulk material by implanting a plurality of particles and performing a controlled cleaving process |
| CN104364879B (zh) | 2012-03-21 | 2017-06-06 | 弗赖贝格化合物原料有限公司 | 用于制备iii‑n模板及其继续加工的方法和iii‑n模板 |
| CN103374754A (zh) * | 2012-04-17 | 2013-10-30 | 鑫晶钻科技股份有限公司 | 蓝宝石材料及其制造方法 |
| US9368582B2 (en) | 2013-11-04 | 2016-06-14 | Avogy, Inc. | High power gallium nitride electronics using miscut substrates |
| CN106784181B (zh) * | 2016-12-14 | 2020-06-23 | 中国科学院苏州纳米技术与纳米仿生研究所 | 提高绿光或更长波长InGaN量子阱发光效率的方法及结构 |
| JP6991043B2 (ja) * | 2017-11-22 | 2022-02-03 | 東京エレクトロン株式会社 | 基板載置台 |
Family Cites Families (33)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3083812A (en) | 1959-12-23 | 1963-04-02 | Int Harvester Co | Wagon elevator for corn pickers |
| US6083812A (en) * | 1993-02-02 | 2000-07-04 | Texas Instruments Incorporated | Heteroepitaxy by large surface steps |
| PL173917B1 (pl) | 1993-08-10 | 1998-05-29 | Ct Badan Wysokocisnieniowych P | Sposób wytwarzania krystalicznej struktury wielowarstwowej |
| JPH10335750A (ja) | 1997-06-03 | 1998-12-18 | Sony Corp | 半導体基板および半導体装置 |
| GB9813192D0 (en) | 1998-06-18 | 1998-08-19 | Imi Cornelius Uk Ltd | Dispensing means |
| JP3669848B2 (ja) * | 1998-09-16 | 2005-07-13 | 日亜化学工業株式会社 | 窒化物半導体レーザ素子 |
| JP3668031B2 (ja) * | 1999-01-29 | 2005-07-06 | 三洋電機株式会社 | 窒化物系半導体発光素子の製造方法 |
| JP4691631B2 (ja) * | 1999-11-29 | 2011-06-01 | 並木精密宝石株式会社 | サファイヤ基板 |
| JP3929008B2 (ja) | 2000-01-14 | 2007-06-13 | シャープ株式会社 | 窒化物系化合物半導体発光素子およびその製造方法 |
| US6447604B1 (en) | 2000-03-13 | 2002-09-10 | Advanced Technology Materials, Inc. | Method for achieving improved epitaxy quality (surface texture and defect density) on free-standing (aluminum, indium, gallium) nitride ((al,in,ga)n) substrates for opto-electronic and electronic devices |
| US6586819B2 (en) * | 2000-08-14 | 2003-07-01 | Nippon Telegraph And Telephone Corporation | Sapphire substrate, semiconductor device, electronic component, and crystal growing method |
| JP2002145700A (ja) | 2000-08-14 | 2002-05-22 | Nippon Telegr & Teleph Corp <Ntt> | サファイア基板および半導体素子ならびに電子部品および結晶成長方法 |
| JP3785566B2 (ja) | 2001-03-19 | 2006-06-14 | 株式会社日鉱マテリアルズ | ＧａＮ系化合物半導体結晶の製造方法 |
| US6635904B2 (en) * | 2001-03-29 | 2003-10-21 | Lumileds Lighting U.S., Llc | Indium gallium nitride smoothing structures for III-nitride devices |
| JP3696182B2 (ja) * | 2001-06-06 | 2005-09-14 | 松下電器産業株式会社 | 半導体レーザ素子 |
| US6734530B2 (en) * | 2001-06-06 | 2004-05-11 | Matsushita Electric Industries Co., Ltd. | GaN-based compound semiconductor EPI-wafer and semiconductor element using the same |
| US6488767B1 (en) * | 2001-06-08 | 2002-12-03 | Advanced Technology Materials, Inc. | High surface quality GaN wafer and method of fabricating same |
| JP4892142B2 (ja) | 2001-06-20 | 2012-03-07 | サムソン エルイーディー カンパニーリミテッド． | 有機金属気相化学蒸着法による高品位ｉｉｉ−族窒化物薄膜の成長方法 |
| US20040014430A1 (en) * | 2001-07-11 | 2004-01-22 | Raviv Melamed | Multiple antenna system for wireless communication |
| US6648966B2 (en) * | 2001-08-01 | 2003-11-18 | Crystal Photonics, Incorporated | Wafer produced thereby, and associated methods and devices using the wafer |
| WO2004061909A1 (en) | 2002-12-16 | 2004-07-22 | The Regents Of The University Of California | Growth of reduced dislocation density non-polar gallium nitride by hydride vapor phase epitaxy |
| JP2003347226A (ja) | 2002-05-30 | 2003-12-05 | Sumitomo Chem Co Ltd | ３−５族化合物半導体の製造方法及び化合物半導体素子 |
| JP4781599B2 (ja) | 2002-09-05 | 2011-09-28 | 日本碍子株式会社 | エピタキシャル基板、及び多層膜構造 |
| JP3826096B2 (ja) * | 2002-11-11 | 2006-09-27 | 株式会社クラレ | 変性エチレン−ビニルアルコール共重合体からなる繊維及び複合繊維 |
| DE10258518C1 (de) * | 2002-12-14 | 2003-11-20 | Braun Gmbh | Aufsatz für ein Epiliergerät |
| US7221037B2 (en) * | 2003-01-20 | 2007-05-22 | Matsushita Electric Industrial Co., Ltd. | Method of manufacturing group III nitride substrate and semiconductor device |
| JP4457609B2 (ja) | 2003-08-26 | 2010-04-28 | 豊田合成株式会社 | 窒化ガリウム（ＧａＮ）の製造方法 |
| JP2005101475A (ja) | 2003-08-28 | 2005-04-14 | Hitachi Cable Ltd | Ｉｉｉ−ｖ族窒化物系半導体基板及びその製造方法 |
| JP2005150287A (ja) * | 2003-11-13 | 2005-06-09 | Hitachi Cable Ltd | Ｉｉｉ−ｖ族窒化物系半導体デバイス及びその製造方法、ｉｉｉ−ｖ族窒化物系半導体基板の製造方法、ｉｉｉ−ｖ族窒化物系半導体基板のロット |
| US7118813B2 (en) | 2003-11-14 | 2006-10-10 | Cree, Inc. | Vicinal gallium nitride substrate for high quality homoepitaxy |
| JP3888374B2 (ja) | 2004-03-17 | 2007-02-28 | 住友電気工業株式会社 | ＧａＮ単結晶基板の製造方法 |
| JP4581490B2 (ja) * | 2004-05-31 | 2010-11-17 | 日立電線株式会社 | Ｉｉｉ−ｖ族窒化物系半導体自立基板の製造方法、及びｉｉｉ−ｖ族窒化物系半導体の製造方法 |
| US20090026488A1 (en) * | 2005-02-21 | 2009-01-29 | Mitsubishi Chemical Corporation | Nitride semiconductor material and production process of nitride semiconductor crystal |
-
2005
- 2005-05-06 DE DE102005021099A patent/DE102005021099A1/de not_active Withdrawn
-
2006
- 2006-05-05 EP EP11157196.4A patent/EP2322699B1/en active Active
- 2006-05-05 CN CN201110220763.3A patent/CN102268737B/zh active Active
- 2006-05-05 PL PL06753501T patent/PL1871928T3/pl unknown
- 2006-05-05 KR KR1020137012980A patent/KR101472832B1/ko active IP Right Grant
- 2006-05-05 EP EP06753501.3A patent/EP1871928B1/en active Active
- 2006-05-05 PL PL11157196T patent/PL2322699T3/pl unknown
- 2006-05-05 TW TW095115987A patent/TWI475598B/zh active
- 2006-05-05 US US11/913,739 patent/US7998273B2/en not_active Expired - Fee Related
- 2006-05-05 KR KR1020077025700A patent/KR101348985B1/ko active IP Right Grant
- 2006-05-05 WO PCT/EP2006/004233 patent/WO2006119927A1/en active Application Filing
- 2006-05-05 CN CNA2006800155472A patent/CN101258271A/zh active Pending
- 2006-05-05 JP JP2008509391A patent/JP5258555B2/ja active Active
-
2010
- 2010-10-01 US US12/896,352 patent/US9115444B2/en active Active
-
2013
- 2013-02-15 JP JP2013027620A patent/JP5908853B2/ja active Active
Also Published As
| Publication number | Publication date |
|---|---|
| US20110018106A1 (en) | 2011-01-27 |
| KR20080017003A (ko) | 2008-02-25 |
| CN101258271A (zh) | 2008-09-03 |
| EP2322699B1 (en) | 2014-03-26 |
| US20080166522A1 (en) | 2008-07-10 |
| KR20130075784A (ko) | 2013-07-05 |
| EP2322699A3 (en) | 2011-06-22 |
| US7998273B2 (en) | 2011-08-16 |
| US9115444B2 (en) | 2015-08-25 |
| TWI475598B (zh) | 2015-03-01 |
| KR101472832B1 (ko) | 2014-12-16 |
| WO2006119927A1 (en) | 2006-11-16 |
| EP2322699A2 (en) | 2011-05-18 |
| KR101348985B1 (ko) | 2014-01-09 |
| EP1871928B1 (en) | 2013-10-30 |
| PL2322699T3 (pl) | 2014-06-30 |
| CN102268737B (zh) | 2014-06-18 |
| DE102005021099A1 (de) | 2006-12-07 |
| EP1871928A1 (en) | 2008-01-02 |
| JP5908853B2 (ja) | 2016-04-26 |
| JP2008542160A (ja) | 2008-11-27 |
| TW200723365A (en) | 2007-06-16 |
| JP2013136512A (ja) | 2013-07-11 |
| CN102268737A (zh) | 2011-12-07 |
| JP5258555B2 (ja) | 2013-08-07 |
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