NO923989L - Integrert optisk krets - Google Patents
Integrert optisk kretsInfo
- Publication number
- NO923989L NO923989L NO92923989A NO923989A NO923989L NO 923989 L NO923989 L NO 923989L NO 92923989 A NO92923989 A NO 92923989A NO 923989 A NO923989 A NO 923989A NO 923989 L NO923989 L NO 923989L
- Authority
- NO
- Norway
- Prior art keywords
- circuits
- produced
- order
- integrated circuits
- waveguides
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/43—Arrangements comprising a plurality of opto-electronic elements and associated optical interconnections
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/26—Optical coupling means
- G02B6/262—Optical details of coupling light into, or out of, or between fibre ends, e.g. special fibre end shapes or associated optical elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1042—Optical microcavities, e.g. cavity dimensions comparable to the wavelength
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/125—Distributed Bragg reflector [DBR] lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Optical Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/777,888 US5148504A (en) | 1991-10-16 | 1991-10-16 | Optical integrated circuit designed to operate by use of photons |
Publications (2)
Publication Number | Publication Date |
---|---|
NO923989D0 NO923989D0 (no) | 1992-10-14 |
NO923989L true NO923989L (no) | 1993-04-19 |
Family
ID=25111610
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NO92923989A NO923989L (no) | 1991-10-16 | 1992-10-14 | Integrert optisk krets |
Country Status (7)
Country | Link |
---|---|
US (1) | US5148504A (de) |
EP (1) | EP0541247A1 (de) |
JP (1) | JPH05218386A (de) |
CA (1) | CA2072247C (de) |
NO (1) | NO923989L (de) |
PT (1) | PT100954A (de) |
TW (1) | TW246748B (de) |
Families Citing this family (44)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5497140A (en) * | 1992-08-12 | 1996-03-05 | Micron Technology, Inc. | Electrically powered postage stamp or mailing or shipping label operative with radio frequency (RF) communication |
USRE42773E1 (en) | 1992-06-17 | 2011-10-04 | Round Rock Research, Llc | Method of manufacturing an enclosed transceiver |
US5779839A (en) * | 1992-06-17 | 1998-07-14 | Micron Communications, Inc. | Method of manufacturing an enclosed transceiver |
DE4319878A1 (de) * | 1992-06-17 | 1993-12-23 | Micron Technology Inc | Hochfrequenz-Identifikationseinrichtung (HFID) und Verfahren zu ihrer Herstellung |
US5776278A (en) | 1992-06-17 | 1998-07-07 | Micron Communications, Inc. | Method of manufacturing an enclosed transceiver |
US6045652A (en) * | 1992-06-17 | 2000-04-04 | Micron Communications, Inc. | Method of manufacturing an enclosed transceiver |
US7158031B2 (en) | 1992-08-12 | 2007-01-02 | Micron Technology, Inc. | Thin, flexible, RFID label and system for use |
DE4312881C1 (de) * | 1993-04-20 | 1994-03-17 | Fraunhofer Ges Forschung | Substrat-Halbzeug für optisch-elektrische Hybridschaltungen und Verfahren zu seiner Herstellung |
US5751466A (en) * | 1996-01-11 | 1998-05-12 | University Of Alabama At Huntsville | Photonic bandgap apparatus and method for delaying photonic signals |
US5988510A (en) * | 1997-02-13 | 1999-11-23 | Micron Communications, Inc. | Tamper resistant smart card and method of protecting data in a smart card |
US6329213B1 (en) | 1997-05-01 | 2001-12-11 | Micron Technology, Inc. | Methods for forming integrated circuits within substrates |
US6339385B1 (en) | 1997-08-20 | 2002-01-15 | Micron Technology, Inc. | Electronic communication devices, methods of forming electrical communication devices, and communication methods |
US6262830B1 (en) | 1997-09-16 | 2001-07-17 | Michael Scalora | Transparent metallo-dielectric photonic band gap structure |
US5907427A (en) | 1997-10-24 | 1999-05-25 | Time Domain Corporation | Photonic band gap device and method using a periodicity defect region to increase photonic signal delay |
US6028693A (en) * | 1998-01-14 | 2000-02-22 | University Of Alabama In Huntsville | Microresonator and associated method for producing and controlling photonic signals with a photonic bandgap delay apparatus |
US6304366B1 (en) | 1998-04-02 | 2001-10-16 | Michael Scalora | Photonic signal frequency conversion using a photonic band gap structure |
US6744552B2 (en) * | 1998-04-02 | 2004-06-01 | Michael Scalora | Photonic signal frequency up and down-conversion using a photonic band gap structure |
US6396617B1 (en) | 1999-05-17 | 2002-05-28 | Michael Scalora | Photonic band gap device and method using a periodicity defect region doped with a gain medium to increase photonic signal delay |
US6273339B1 (en) | 1999-08-30 | 2001-08-14 | Micron Technology, Inc. | Tamper resistant smart card and method of protecting data in a smart card |
US6538794B1 (en) | 1999-09-30 | 2003-03-25 | D'aguanno Giuseppe | Efficient non-linear phase shifting using a photonic band gap structure |
US6339493B1 (en) | 1999-12-23 | 2002-01-15 | Michael Scalora | Apparatus and method for controlling optics propagation based on a transparent metal stack |
US6414780B1 (en) | 1999-12-23 | 2002-07-02 | D'aguanno Giuseppe | Photonic signal reflectivity and transmissivity control using a photonic band gap structure |
US6693033B2 (en) * | 2000-02-10 | 2004-02-17 | Motorola, Inc. | Method of removing an amorphous oxide from a monocrystalline surface |
WO2001061387A2 (en) * | 2000-02-17 | 2001-08-23 | Nanovation Technologies, Inc. | Strongly confined polarization-independent single-mode optical ridge waveguide |
JP4638005B2 (ja) * | 2000-08-28 | 2011-02-23 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
US20020096683A1 (en) * | 2001-01-19 | 2002-07-25 | Motorola, Inc. | Structure and method for fabricating GaN devices utilizing the formation of a compliant substrate |
JP2003015175A (ja) | 2001-04-27 | 2003-01-15 | Mitsubishi Electric Corp | 固体光源装置 |
US6709989B2 (en) | 2001-06-21 | 2004-03-23 | Motorola, Inc. | Method for fabricating a semiconductor structure including a metal oxide interface with silicon |
US7019332B2 (en) * | 2001-07-20 | 2006-03-28 | Freescale Semiconductor, Inc. | Fabrication of a wavelength locker within a semiconductor structure |
US6693298B2 (en) | 2001-07-20 | 2004-02-17 | Motorola, Inc. | Structure and method for fabricating epitaxial semiconductor on insulator (SOI) structures and devices utilizing the formation of a compliant substrate for materials used to form same |
US20030026310A1 (en) * | 2001-08-06 | 2003-02-06 | Motorola, Inc. | Structure and method for fabrication for a lighting device |
US6639249B2 (en) * | 2001-08-06 | 2003-10-28 | Motorola, Inc. | Structure and method for fabrication for a solid-state lighting device |
DE10196768D2 (de) * | 2001-08-14 | 2004-07-01 | Infineon Technologies Ag | Photodiodenanordnung mit zwei Photodioden |
US6673667B2 (en) * | 2001-08-15 | 2004-01-06 | Motorola, Inc. | Method for manufacturing a substantially integral monolithic apparatus including a plurality of semiconductor materials |
US7169619B2 (en) * | 2002-11-19 | 2007-01-30 | Freescale Semiconductor, Inc. | Method for fabricating semiconductor structures on vicinal substrates using a low temperature, low pressure, alkaline earth metal-rich process |
US6806202B2 (en) | 2002-12-03 | 2004-10-19 | Motorola, Inc. | Method of removing silicon oxide from a surface of a substrate |
US6963090B2 (en) | 2003-01-09 | 2005-11-08 | Freescale Semiconductor, Inc. | Enhancement mode metal-oxide-semiconductor field effect transistor |
US7286770B2 (en) * | 2003-07-18 | 2007-10-23 | International Business Machines Corporation | Fiber optic transmission lines on an SOC |
US7570849B2 (en) * | 2005-06-21 | 2009-08-04 | Hewlett-Packard Development Company, L.P. | Integrated circuit device having optically coupled layers |
US7352602B2 (en) | 2005-12-30 | 2008-04-01 | Micron Technology, Inc. | Configurable inputs and outputs for memory stacking system and method |
EP2111529B1 (de) | 2006-10-23 | 2015-08-26 | J.A. Woollam Co. Inc. | Verwendung eines Detektors mit mehreren Elementen um einen Strahl elektromagnetischer Strahlung auf das Ende einer optischen Fasers auszurichten |
US7469085B1 (en) * | 2007-07-12 | 2008-12-23 | International Business Machines Corporation | Method and apparatus for minimizing propagation losses in wavelength selective filters |
US20090317033A1 (en) * | 2008-06-20 | 2009-12-24 | Industrial Technology Research Institute | Integrated circuit and photonic board thereof |
KR20100067487A (ko) * | 2008-12-11 | 2010-06-21 | 삼성전자주식회사 | 테스트 인터페이스 장치, 테스트 시스템 및 광 인터페이스 메모리 장치 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2152464B1 (de) * | 1971-09-16 | 1974-05-31 | Thomson Csf | |
FR2613826B1 (fr) * | 1987-04-07 | 1990-10-26 | Commissariat Energie Atomique | Capteur de deplacement en optique integree |
US4762382A (en) * | 1987-06-29 | 1988-08-09 | Honeywell Inc. | Optical interconnect circuit for GaAs optoelectronics and Si VLSI/VHSIC |
DE3815293A1 (de) * | 1988-05-05 | 1989-11-16 | Licentia Gmbh | Dreidimensional angeordnete wellenleiter |
-
1991
- 1991-10-16 US US07/777,888 patent/US5148504A/en not_active Expired - Lifetime
-
1992
- 1992-04-01 TW TW081102484A patent/TW246748B/zh active
- 1992-06-24 CA CA002072247A patent/CA2072247C/en not_active Expired - Fee Related
- 1992-10-08 EP EP92309166A patent/EP0541247A1/de not_active Ceased
- 1992-10-13 PT PT100954A patent/PT100954A/pt not_active Application Discontinuation
- 1992-10-14 NO NO92923989A patent/NO923989L/no unknown
- 1992-10-16 JP JP4277591A patent/JPH05218386A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
CA2072247A1 (en) | 1993-04-17 |
PT100954A (pt) | 1994-05-31 |
EP0541247A1 (de) | 1993-05-12 |
US5148504A (en) | 1992-09-15 |
NO923989D0 (no) | 1992-10-14 |
TW246748B (de) | 1995-05-01 |
CA2072247C (en) | 1997-03-25 |
JPH05218386A (ja) | 1993-08-27 |
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