NO883658D0 - Fremgangsmaate til ionisk etsing under lav polariseringsspenning ved tilfoersel av inert gass. - Google Patents

Fremgangsmaate til ionisk etsing under lav polariseringsspenning ved tilfoersel av inert gass.

Info

Publication number
NO883658D0
NO883658D0 NO883658A NO883658A NO883658D0 NO 883658 D0 NO883658 D0 NO 883658D0 NO 883658 A NO883658 A NO 883658A NO 883658 A NO883658 A NO 883658A NO 883658 D0 NO883658 D0 NO 883658D0
Authority
NO
Norway
Prior art keywords
procedure
gas supply
under low
current under
ionic current
Prior art date
Application number
NO883658A
Other languages
English (en)
Other versions
NO883658L (no
Inventor
Denis Rufin
Ikuo Hirase
Original Assignee
Air Liquide
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Air Liquide filed Critical Air Liquide
Publication of NO883658D0 publication Critical patent/NO883658D0/no
Publication of NO883658L publication Critical patent/NO883658L/no

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Fuel Cell (AREA)
  • Details Of Flowmeters (AREA)
  • Investigating Or Analyzing Non-Biological Materials By The Use Of Chemical Means (AREA)
  • Silicon Compounds (AREA)
  • ing And Chemical Polishing (AREA)
NO88883658A 1987-08-18 1988-08-17 Fremgangsmaate til ionisk etsing ved lav polarisasjonsspenning ved tilfoering av inert gass. NO883658L (no)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8711670A FR2619578A1 (fr) 1987-08-18 1987-08-18 Procede de gravure ionique reactive a basse tension d'autopolarisation par addition de gaz inertes

Publications (2)

Publication Number Publication Date
NO883658D0 true NO883658D0 (no) 1988-08-17
NO883658L NO883658L (no) 1989-02-20

Family

ID=9354266

Family Applications (1)

Application Number Title Priority Date Filing Date
NO88883658A NO883658L (no) 1987-08-18 1988-08-17 Fremgangsmaate til ionisk etsing ved lav polarisasjonsspenning ved tilfoering av inert gass.

Country Status (7)

Country Link
EP (1) EP0305268A1 (no)
JP (1) JPS6461023A (no)
KR (1) KR890004414A (no)
DK (1) DK459988A (no)
FI (1) FI883805A (no)
FR (1) FR2619578A1 (no)
NO (1) NO883658L (no)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5021121A (en) * 1990-02-16 1991-06-04 Applied Materials, Inc. Process for RIE etching silicon dioxide
JPH05234959A (ja) * 1991-08-16 1993-09-10 Hitachi Ltd ドライエッチング方法及びドライエッチング装置
JPH09129612A (ja) * 1995-10-26 1997-05-16 Tokyo Electron Ltd エッチングガス及びエッチング方法
IL119598A0 (en) * 1995-11-17 1997-02-18 Air Prod & Chem Plasma etch with trifluoroacetic acid or its derivatives
DE10045793C2 (de) * 2000-09-15 2002-07-18 Zeiss Carl Verfahren zum Strukturieren eines Substrats
US7547635B2 (en) * 2002-06-14 2009-06-16 Lam Research Corporation Process for etching dielectric films with improved resist and/or etch profile characteristics
CN101770947B (zh) * 2008-12-30 2011-10-05 中芯国际集成电路制造(上海)有限公司 聚对苯撑苯并双恶唑纤维表面处理方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56158873A (en) * 1980-05-14 1981-12-07 Hitachi Ltd Dry etching method

Also Published As

Publication number Publication date
FI883805A0 (fi) 1988-08-17
DK459988A (da) 1989-02-19
KR890004414A (ko) 1989-04-21
FI883805A (fi) 1989-02-19
FR2619578A1 (fr) 1989-02-24
DK459988D0 (da) 1988-08-17
JPS6461023A (en) 1989-03-08
NO883658L (no) 1989-02-20
EP0305268A1 (fr) 1989-03-01

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