FI883805A0 - Foerfarande foer reaktiv jonetsning under laog sjaelvpolarisationsspaenning genom tillsaettning av inerta gaser. - Google Patents

Foerfarande foer reaktiv jonetsning under laog sjaelvpolarisationsspaenning genom tillsaettning av inerta gaser.

Info

Publication number
FI883805A0
FI883805A0 FI883805A FI883805A FI883805A0 FI 883805 A0 FI883805 A0 FI 883805A0 FI 883805 A FI883805 A FI 883805A FI 883805 A FI883805 A FI 883805A FI 883805 A0 FI883805 A0 FI 883805A0
Authority
FI
Finland
Prior art keywords
tillsaettning
sjaelvpolarisationsspaenning
jonetsning
inerta
laog
Prior art date
Application number
FI883805A
Other languages
English (en)
Other versions
FI883805A (fi
Inventor
Denis Rufin
Ikuo Hirase
Original Assignee
Air Liquide
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Air Liquide filed Critical Air Liquide
Publication of FI883805A0 publication Critical patent/FI883805A0/fi
Publication of FI883805A publication Critical patent/FI883805A/fi

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
  • Fuel Cell (AREA)
  • Details Of Flowmeters (AREA)
  • Investigating Or Analyzing Non-Biological Materials By The Use Of Chemical Means (AREA)
  • Silicon Compounds (AREA)
FI883805A 1987-08-18 1988-08-17 Foerfarande foer reaktiv jonetsning under laog sjaelvpolarisationsspaenning genom tillsaettning av inerta gaser. FI883805A (fi)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8711670A FR2619578A1 (fr) 1987-08-18 1987-08-18 Procede de gravure ionique reactive a basse tension d'autopolarisation par addition de gaz inertes

Publications (2)

Publication Number Publication Date
FI883805A0 true FI883805A0 (fi) 1988-08-17
FI883805A FI883805A (fi) 1989-02-19

Family

ID=9354266

Family Applications (1)

Application Number Title Priority Date Filing Date
FI883805A FI883805A (fi) 1987-08-18 1988-08-17 Foerfarande foer reaktiv jonetsning under laog sjaelvpolarisationsspaenning genom tillsaettning av inerta gaser.

Country Status (7)

Country Link
EP (1) EP0305268A1 (fi)
JP (1) JPS6461023A (fi)
KR (1) KR890004414A (fi)
DK (1) DK459988A (fi)
FI (1) FI883805A (fi)
FR (1) FR2619578A1 (fi)
NO (1) NO883658L (fi)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5021121A (en) * 1990-02-16 1991-06-04 Applied Materials, Inc. Process for RIE etching silicon dioxide
JPH05234959A (ja) * 1991-08-16 1993-09-10 Hitachi Ltd ドライエッチング方法及びドライエッチング装置
JPH09129612A (ja) * 1995-10-26 1997-05-16 Tokyo Electron Ltd エッチングガス及びエッチング方法
IL119598A0 (en) * 1995-11-17 1997-02-18 Air Prod & Chem Plasma etch with trifluoroacetic acid or its derivatives
DE10045793C2 (de) * 2000-09-15 2002-07-18 Zeiss Carl Verfahren zum Strukturieren eines Substrats
US7547635B2 (en) 2002-06-14 2009-06-16 Lam Research Corporation Process for etching dielectric films with improved resist and/or etch profile characteristics
CN101770947B (zh) * 2008-12-30 2011-10-05 中芯国际集成电路制造(上海)有限公司 聚对苯撑苯并双恶唑纤维表面处理方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56158873A (en) * 1980-05-14 1981-12-07 Hitachi Ltd Dry etching method

Also Published As

Publication number Publication date
NO883658L (no) 1989-02-20
FI883805A (fi) 1989-02-19
JPS6461023A (en) 1989-03-08
FR2619578A1 (fr) 1989-02-24
DK459988D0 (da) 1988-08-17
EP0305268A1 (fr) 1989-03-01
KR890004414A (ko) 1989-04-21
DK459988A (da) 1989-02-19
NO883658D0 (no) 1988-08-17

Similar Documents

Publication Publication Date Title
FI870010A (fi) Foerfarande foer framnstaellning av genom fotopolymerisation tvaerbundna reliefformar.
FI870005A (fi) Laogviskoesa hoegmolekulaera genom filtrering steriliserbara hyaluronsyror.
FI911220A0 (fi) Genom inverkan av ultraviolettljus haerdbara katjoniska vinyleterpolyuretanbelaeggningsblandningar.
FI882604A (fi) Foerbaettrande av utnyttjande av foer vaexter anvaendbart kvaeve genom bringande av odlingsvaexter att uttrycka glutaminsyntetas i oeverskott.
FI905830A0 (fi) Anordning foer reglering av luftfloedet genom en luftkanal i en kemisk regeneringsugn.
FI881045A0 (fi) Foerfartande foer neutralisering av flytande avfall genom foerbraenning.
FI883805A0 (fi) Foerfarande foer reaktiv jonetsning under laog sjaelvpolarisationsspaenning genom tillsaettning av inerta gaser.
FI905540A0 (fi) Anvaendning av vissa gjutjaernblandningar foer bomberingsformar framstaellda genom pressning av glasskivor.
FI870360A0 (fi) Nytt foerfarande foer framstaellning av natriumkarboximetylcellulosa.
FI884507A (fi) Foerminskning av faerg i pappersfabriksavfallsvatten genom oxidering med klordioxid.
FI872162A0 (fi) Anordning foer angivande av stroemimpulser vilka flyter genom oeverspaenningsavlaeggningsmekanismer i hoegspaenningsnaet.
FI871333A (fi) Foerfarande foer att skaera vaextmaterial genom att anvaenda laser-straole.
FI881163A (fi) Foerhindrande av korrosion av metaller i vattensystem genom anvaendning av organiska fosforderivat innehaollande karboxylgrupper.
FI882734A0 (fi) Foerfarande foer anvaendning av peroxid-dismutas under kirurgiska ingrepp.
FI870963A (fi) Foerfarande foer plantering av plantor.
FI870122A0 (fi) Konjugat av biologiska molekyler.
FI901272A0 (fi) Anordning foer foerbehandling av extra televisionssignalinformation.
FI870886A0 (fi) Ventilationslykta foer luftvaexling genom tyngdkraft.
FI923283A0 (fi) Foerfarande foer framstaellning av l-tert-leucin genom transaminering.
FI893550A (fi) Foerfarande foer avlaegsning av olja fraon vatten genom separering.
FI893725A0 (fi) Adsorptionsseparation av para-xylen genom anvaendning av dietyltoleuendesorbent.
FI904023A0 (fi) Anordning foer montering av byggnadselement genom spikning.
FI870395A0 (fi) Foerfarande foer framstaellning av laminerad vaeggkonstruktion.
FI870514A (fi) Laminering av glasrutor.
FI870265A0 (fi) Foerfarande foer framstaellning av fuktig fyllfaerdig livsmedelstarm.

Legal Events

Date Code Title Description
FD Application lapsed

Owner name: L AIR LIQUIDE SOCIETE ANONYME POUR L ETUDE ET L EX