NO830781L - Solcelle - Google Patents
SolcelleInfo
- Publication number
- NO830781L NO830781L NO830781A NO830781A NO830781L NO 830781 L NO830781 L NO 830781L NO 830781 A NO830781 A NO 830781A NO 830781 A NO830781 A NO 830781A NO 830781 L NO830781 L NO 830781L
- Authority
- NO
- Norway
- Prior art keywords
- copper
- layer
- sulphide
- cell
- contact
- Prior art date
Links
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 27
- 229910052802 copper Inorganic materials 0.000 claims abstract description 27
- 239000010949 copper Substances 0.000 claims abstract description 27
- BWFPGXWASODCHM-UHFFFAOYSA-N copper monosulfide Chemical compound [Cu]=S BWFPGXWASODCHM-UHFFFAOYSA-N 0.000 claims abstract description 27
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 claims abstract description 20
- 239000005751 Copper oxide Substances 0.000 claims abstract description 16
- 229910000431 copper oxide Inorganic materials 0.000 claims abstract description 16
- 238000010438 heat treatment Methods 0.000 claims abstract description 15
- 229910052980 cadmium sulfide Inorganic materials 0.000 claims abstract description 12
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 11
- CJOBVZJTOIVNNF-UHFFFAOYSA-N cadmium sulfide Chemical compound [Cd]=S CJOBVZJTOIVNNF-UHFFFAOYSA-N 0.000 claims abstract description 10
- 238000004519 manufacturing process Methods 0.000 claims abstract description 9
- 238000001556 precipitation Methods 0.000 claims abstract description 6
- 239000000758 substrate Substances 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims description 16
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 claims description 4
- 229910001431 copper ion Inorganic materials 0.000 claims description 4
- CKKNXLXIMISLER-UHFFFAOYSA-N [Cu]=S.[S-2].[Cd+2] Chemical compound [Cu]=S.[S-2].[Cd+2] CKKNXLXIMISLER-UHFFFAOYSA-N 0.000 claims description 3
- 238000005538 encapsulation Methods 0.000 claims description 3
- 230000005012 migration Effects 0.000 claims description 3
- 238000013508 migration Methods 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 2
- 238000000576 coating method Methods 0.000 claims description 2
- 150000001875 compounds Chemical class 0.000 claims 1
- 239000004020 conductor Substances 0.000 claims 1
- 239000011521 glass Substances 0.000 abstract description 5
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 abstract description 2
- 229910001887 tin oxide Inorganic materials 0.000 abstract description 2
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 abstract 1
- 229960004643 cupric oxide Drugs 0.000 description 14
- 239000010408 film Substances 0.000 description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- 238000000151 deposition Methods 0.000 description 5
- 238000007740 vapor deposition Methods 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 239000005340 laminated glass Substances 0.000 description 3
- 238000010276 construction Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 239000005864 Sulphur Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- -1 by dipping Chemical compound 0.000 description 1
- FRLJSGOEGLARCA-UHFFFAOYSA-N cadmium sulfide Chemical compound [S-2].[Cd+2] FRLJSGOEGLARCA-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
- H10F10/169—Photovoltaic cells having only PN heterojunction potential barriers comprising Cu2X/CdX heterojunctions, wherein X is a Group VI element, e.g. Cu2O/CdO PN heterojunction photovoltaic cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
- H10F77/206—Electrodes for devices having potential barriers
- H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Photovoltaic Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP82301152A EP0091998A1 (en) | 1982-03-08 | 1982-03-08 | Cadmium sulphide solar cells |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NO830781L true NO830781L (no) | 1983-09-09 |
Family
ID=8189594
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NO830781A NO830781L (no) | 1982-03-08 | 1983-03-07 | Solcelle |
Country Status (16)
| Country | Link |
|---|---|
| US (1) | US4463215A (pm) |
| EP (1) | EP0091998A1 (pm) |
| JP (1) | JPS58212185A (pm) |
| KR (1) | KR840004310A (pm) |
| AR (1) | AR230897A1 (pm) |
| AU (1) | AU1212583A (pm) |
| BR (1) | BR8301111A (pm) |
| CA (1) | CA1194970A (pm) |
| DK (1) | DK100983A (pm) |
| ES (1) | ES520376A0 (pm) |
| GR (1) | GR77860B (pm) |
| IL (1) | IL68061A0 (pm) |
| NO (1) | NO830781L (pm) |
| NZ (1) | NZ203464A (pm) |
| ZA (1) | ZA831566B (pm) |
| ZW (1) | ZW6083A1 (pm) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA1207421A (en) * | 1983-11-14 | 1986-07-08 | Ottilia F. Toth | High efficiency stable cds cu.sub.2s solar cells manufacturing process using thick film methodology |
| US4666569A (en) * | 1984-12-28 | 1987-05-19 | Standard Oil Commercial Development Company | Method of making multilayer ohmic contact to thin film p-type II-VI semiconductor |
| DE3542111A1 (de) * | 1985-11-28 | 1987-06-04 | Nukem Gmbh | Verfahren zur durchfuehrung eines glimmprozesses |
| DE3542116A1 (de) * | 1985-11-28 | 1987-06-04 | Nukem Gmbh | Photovoltaische zelle |
| GB2196650A (en) * | 1986-10-27 | 1988-05-05 | Prutec Ltd | Cadmium sulphide solar cells |
| JPH01111380A (ja) * | 1987-10-23 | 1989-04-28 | Sumitomo Metal Ind Ltd | 光起電力素子及びその製造方法 |
| US6169246B1 (en) | 1998-09-08 | 2001-01-02 | Midwest Research Institute | Photovoltaic devices comprising zinc stannate buffer layer and method for making |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4104420A (en) * | 1975-08-25 | 1978-08-01 | Photon Power, Inc. | Photovoltaic cell |
| DE2732933C2 (de) * | 1977-07-21 | 1984-11-15 | Bloss, Werner H., Prof. Dr.-Ing., 7065 Winterbach | Verfahren zum Herstellen von Dünnschicht-Solarzellen mit pn-Heteroübergang |
| US4267398A (en) * | 1979-05-29 | 1981-05-12 | University Of Delaware | Thin film photovoltaic cells |
| US4239553A (en) * | 1979-05-29 | 1980-12-16 | University Of Delaware | Thin film photovoltaic cells having increased durability and operating life and method for making same |
| US4318938A (en) * | 1979-05-29 | 1982-03-09 | The University Of Delaware | Method for the continuous manufacture of thin film solar cells |
| US4251286A (en) * | 1979-09-18 | 1981-02-17 | The University Of Delaware | Thin film photovoltaic cells having blocking layers |
| US4260428A (en) * | 1980-03-05 | 1981-04-07 | Ses, Incorporated | Photovoltaic cell |
-
1982
- 1982-03-08 EP EP82301152A patent/EP0091998A1/en not_active Ceased
-
1983
- 1983-02-28 DK DK100983A patent/DK100983A/da not_active Application Discontinuation
- 1983-03-04 NZ NZ203464A patent/NZ203464A/en unknown
- 1983-03-07 IL IL8368061A patent/IL68061A0/xx unknown
- 1983-03-07 BR BR8301111A patent/BR8301111A/pt unknown
- 1983-03-07 GR GR70710A patent/GR77860B/el unknown
- 1983-03-07 US US06/473,140 patent/US4463215A/en not_active Expired - Fee Related
- 1983-03-07 NO NO830781A patent/NO830781L/no unknown
- 1983-03-07 CA CA000423017A patent/CA1194970A/en not_active Expired
- 1983-03-07 ZW ZW60/83A patent/ZW6083A1/xx unknown
- 1983-03-07 AU AU12125/83A patent/AU1212583A/en not_active Abandoned
- 1983-03-07 JP JP58036085A patent/JPS58212185A/ja active Pending
- 1983-03-07 ES ES520376A patent/ES520376A0/es active Granted
- 1983-03-08 KR KR1019830000924A patent/KR840004310A/ko not_active Withdrawn
- 1983-03-08 AR AR292313A patent/AR230897A1/es active
- 1983-03-08 ZA ZA831566A patent/ZA831566B/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| ES8404570A1 (es) | 1984-04-16 |
| US4463215A (en) | 1984-07-31 |
| DK100983D0 (da) | 1983-02-28 |
| GR77860B (pm) | 1984-09-25 |
| ES520376A0 (es) | 1984-04-16 |
| EP0091998A1 (en) | 1983-10-26 |
| CA1194970A (en) | 1985-10-08 |
| NZ203464A (en) | 1985-07-12 |
| ZW6083A1 (en) | 1983-05-25 |
| KR840004310A (ko) | 1984-10-10 |
| IL68061A0 (en) | 1983-06-15 |
| ZA831566B (en) | 1983-11-30 |
| BR8301111A (pt) | 1983-11-22 |
| DK100983A (da) | 1983-09-09 |
| JPS58212185A (ja) | 1983-12-09 |
| AU1212583A (en) | 1983-09-15 |
| AR230897A1 (es) | 1984-07-31 |
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