NO2944700T3 - - Google Patents
Info
- Publication number
- NO2944700T3 NO2944700T3 NO15158185A NO15158185A NO2944700T3 NO 2944700 T3 NO2944700 T3 NO 2944700T3 NO 15158185 A NO15158185 A NO 15158185A NO 15158185 A NO15158185 A NO 15158185A NO 2944700 T3 NO2944700 T3 NO 2944700T3
- Authority
- NO
- Norway
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0032—Packages or encapsulation
- B81B7/0035—Packages or encapsulation for maintaining a controlled atmosphere inside of the chamber containing the MEMS
- B81B7/0038—Packages or encapsulation for maintaining a controlled atmosphere inside of the chamber containing the MEMS using materials for controlling the level of pressure, contaminants or moisture inside of the package, e.g. getters
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
- B81C1/00269—Bonding of solid lids or wafers to the substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/52—Mounting semiconductor bodies in containers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
- H01L23/18—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
- H01L23/26—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device including materials for absorbing or reacting with moisture or other undesired substances, e.g. getters
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49866—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14618—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14634—Assemblies, i.e. Hybrid structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14636—Interconnect structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/1469—Assemblies, i.e. hybrid integration
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0207—Bolometers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2203/00—Forming microstructural systems
- B81C2203/03—Bonding two components
- B81C2203/033—Thermal bonding
- B81C2203/035—Soldering
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Micromachines (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/939,400 US9093444B2 (en) | 2013-07-11 | 2013-07-11 | Wafer level package solder barrier used as vacuum getter |
Publications (1)
Publication Number | Publication Date |
---|---|
NO2944700T3 true NO2944700T3 (de) | 2018-03-17 |
Family
ID=51293136
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NO15158185A NO2944700T3 (de) | 2013-07-11 | 2012-10-20 |
Country Status (9)
Country | Link |
---|---|
US (4) | US9093444B2 (de) |
EP (1) | EP3019441B1 (de) |
JP (1) | JP6122220B2 (de) |
KR (1) | KR101752107B1 (de) |
CN (2) | CN109231160A (de) |
CA (1) | CA2916672C (de) |
IL (1) | IL243086A (de) |
NO (1) | NO2944700T3 (de) |
WO (1) | WO2015006327A1 (de) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR3006236B1 (fr) * | 2013-06-03 | 2016-07-29 | Commissariat Energie Atomique | Procede de collage metallique direct |
US9771258B2 (en) * | 2015-06-24 | 2017-09-26 | Raytheon Company | Wafer level MEMS package including dual seal ring |
US20170081178A1 (en) * | 2015-09-22 | 2017-03-23 | Freescale Semiconductor, Inc. | Semiconductor device package with seal structure |
US9570321B1 (en) * | 2015-10-20 | 2017-02-14 | Raytheon Company | Use of an external getter to reduce package pressure |
US9893027B2 (en) * | 2016-04-07 | 2018-02-13 | Nxp Usa, Inc. | Pre-plated substrate for die attachment |
US9938134B2 (en) * | 2016-04-14 | 2018-04-10 | Taiwan Semiconductor Manufacturing Co., Ltd. | Getter electrode to improve vacuum level in a microelectromechanical systems (MEMS) device |
US10115692B2 (en) | 2016-09-14 | 2018-10-30 | International Business Machines Corporation | Method of forming solder bumps |
JP2018054496A (ja) * | 2016-09-29 | 2018-04-05 | セイコーインスツル株式会社 | パッケージおよび赤外線センサ |
KR101952368B1 (ko) * | 2016-11-25 | 2019-02-26 | 오승래 | 환자 맞춤형 수술기구 |
US10457549B2 (en) * | 2017-02-03 | 2019-10-29 | Taiwan Semiconductor Manfacturing Company Ltd. | Semiconductive structure and manufacturing method thereof |
JP7408266B2 (ja) * | 2017-06-14 | 2024-01-05 | 日亜化学工業株式会社 | 光源装置 |
CN109879240B (zh) * | 2017-12-06 | 2021-11-09 | 有研工程技术研究院有限公司 | 一种厚膜吸气材料的制备方法 |
US20190202684A1 (en) * | 2017-12-29 | 2019-07-04 | Texas Instruments Incorporated | Protective bondline control structure |
FR3088319B1 (fr) * | 2018-11-08 | 2020-10-30 | Ulis | Boitier hermetique comportant un getter, composant optoelectronique ou dispositif mems integrant un tel boitier hermetique et procede de fabrication associe |
CN110148571B (zh) * | 2018-12-10 | 2022-03-11 | 上海欧菲尔光电技术有限公司 | 一种八英寸红外探测器封装窗口及其制备方法 |
US10968099B2 (en) * | 2018-12-28 | 2021-04-06 | Texas Instruments Incorporated | Package moisture control and leak mitigation for high vacuum sealed devices |
CN111048472B (zh) * | 2020-01-07 | 2021-12-03 | 深圳南信国际电子有限公司 | 一种带镀层的红外探测器真空封装结构 |
JP2021136413A (ja) * | 2020-02-28 | 2021-09-13 | 国立研究開発法人産業技術総合研究所 | 封止構造体およびその製造方法 |
US11670616B2 (en) * | 2020-06-22 | 2023-06-06 | Epir, Inc. | Modified direct bond interconnect for FPAs |
JP7231118B1 (ja) * | 2022-04-11 | 2023-03-01 | 三菱電機株式会社 | 中空パッケージ |
WO2024090027A1 (ja) * | 2022-10-26 | 2024-05-02 | ソニーセミコンダクタソリューションズ株式会社 | パッケージおよびパッケージの製造方法 |
Family Cites Families (39)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5111049A (en) * | 1990-12-21 | 1992-05-05 | Santa Barbara Research Center | Remote fired RF getter for use in metal infrared detector dewar |
US5789859A (en) * | 1996-11-25 | 1998-08-04 | Micron Display Technology, Inc. | Field emission display with non-evaporable getter material |
US5701008A (en) * | 1996-11-29 | 1997-12-23 | He Holdings, Inc. | Integrated infrared microlens and gas molecule getter grating in a vacuum package |
US6499354B1 (en) | 1998-05-04 | 2002-12-31 | Integrated Sensing Systems (Issys), Inc. | Methods for prevention, reduction, and elimination of outgassing and trapped gases in micromachined devices |
US6252229B1 (en) * | 1998-07-10 | 2001-06-26 | Boeing North American, Inc. | Sealed-cavity microstructure and microbolometer and associated fabrication methods |
US6303986B1 (en) * | 1998-07-29 | 2001-10-16 | Silicon Light Machines | Method of and apparatus for sealing an hermetic lid to a semiconductor die |
US8021976B2 (en) * | 2002-10-15 | 2011-09-20 | Megica Corporation | Method of wire bonding over active area of a semiconductor circuit |
US6521477B1 (en) * | 2000-02-02 | 2003-02-18 | Raytheon Company | Vacuum package fabrication of integrated circuit components |
US7315115B1 (en) * | 2000-10-27 | 2008-01-01 | Canon Kabushiki Kaisha | Light-emitting and electron-emitting devices having getter regions |
JP2002299484A (ja) * | 2001-03-29 | 2002-10-11 | Matsushita Electric Ind Co Ltd | 電子部品 |
US6853076B2 (en) * | 2001-09-21 | 2005-02-08 | Intel Corporation | Copper-containing C4 ball-limiting metallurgy stack for enhanced reliability of packaged structures and method of making same |
US6923625B2 (en) | 2002-01-07 | 2005-08-02 | Integrated Sensing Systems, Inc. | Method of forming a reactive material and article formed thereby |
US7276798B2 (en) * | 2002-05-23 | 2007-10-02 | Honeywell International Inc. | Integral topside vacuum package |
AU2003256360A1 (en) | 2002-06-25 | 2004-01-06 | Unitive International Limited | Methods of forming electronic structures including conductive shunt layers and related structures |
US6988924B2 (en) | 2003-04-14 | 2006-01-24 | Hewlett-Packard Development Company, L.P. | Method of making a getter structure |
US20050085053A1 (en) * | 2003-10-20 | 2005-04-21 | Chien-Hua Chen | Method of activating a getter structure |
US7427557B2 (en) * | 2004-03-10 | 2008-09-23 | Unitive International Limited | Methods of forming bumps using barrier layers as etch masks |
US7952189B2 (en) * | 2004-05-27 | 2011-05-31 | Chang-Feng Wan | Hermetic packaging and method of manufacture and use therefore |
US7045827B2 (en) * | 2004-06-24 | 2006-05-16 | Gallup Kendra J | Lids for wafer-scale optoelectronic packages |
US7615833B2 (en) * | 2004-07-13 | 2009-11-10 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Film bulk acoustic resonator package and method of fabricating same |
US7204737B2 (en) * | 2004-09-23 | 2007-04-17 | Temic Automotive Of North America, Inc. | Hermetically sealed microdevice with getter shield |
KR100656192B1 (ko) | 2004-11-24 | 2006-12-12 | 이병철 | 전면발광형 유기이엘 디스플레이 소자 |
US7262412B2 (en) * | 2004-12-10 | 2007-08-28 | L-3 Communications Corporation | Optically blocked reference pixels for focal plane arrays |
FR2883099B1 (fr) * | 2005-03-14 | 2007-04-13 | Commissariat Energie Atomique | Protection d'un getter en couche mince |
US7442570B2 (en) * | 2005-03-18 | 2008-10-28 | Invensence Inc. | Method of fabrication of a AL/GE bonding in a wafer packaging environment and a product produced therefrom |
US7789949B2 (en) | 2005-11-23 | 2010-09-07 | Integrated Sensing Systems, Inc. | Getter device |
US7718965B1 (en) * | 2006-08-03 | 2010-05-18 | L-3 Communications Corporation | Microbolometer infrared detector elements and methods for forming same |
EP2008966A3 (de) | 2007-06-27 | 2013-06-12 | Sumitomo Precision Products Co., Ltd. | In einer hermetischen Kammer mit einem Getterfilm geformte MEMS-Vorrichtung |
KR101014263B1 (ko) * | 2008-09-04 | 2011-02-16 | 삼성전기주식회사 | 촉각 센서 |
US8343806B2 (en) * | 2009-03-05 | 2013-01-01 | Raytheon Company | Hermetic packaging of integrated circuit components |
FR2946777B1 (fr) | 2009-06-12 | 2011-07-22 | Commissariat Energie Atomique | Dispositif de detection et/ou d'emission de rayonnement electromagnetique et procede de fabrication d'un tel dispositif |
FR2950877B1 (fr) | 2009-10-07 | 2012-01-13 | Commissariat Energie Atomique | Structure a cavite comportant une interface de collage a base de materiau getter |
FR2950876B1 (fr) * | 2009-10-07 | 2012-02-10 | Commissariat Energie Atomique | Procede de traitement d'un materiau getter et procede d'encapsulation d'un tel materiau getter |
DE102009046687A1 (de) | 2009-11-13 | 2011-05-19 | Robert Bosch Gmbh | Mikromechanisches Verfahren und entsprechende Anordnung zum Bonden von Halbleitersubstraten sowie entsprechender gebondeter Halbleitechip |
EP2363373A1 (de) * | 2010-03-02 | 2011-09-07 | SensoNor Technologies AS | Procédé de collage pour systèmes micro et nano sensibles |
CN102275863B (zh) * | 2010-06-08 | 2013-11-06 | 北京广微积电科技有限公司 | 微机电器件的晶圆级真空封装方法 |
US8809784B2 (en) | 2010-10-21 | 2014-08-19 | Raytheon Company | Incident radiation detector packaging |
FR2967150A1 (fr) | 2010-11-09 | 2012-05-11 | Commissariat Energie Atomique | Procédé de réalisation de substrat a couches enfouies de matériau getter |
US20140175590A1 (en) * | 2012-12-20 | 2014-06-26 | Raytheon Company | Getter structure for wafer level vacuum packaged device |
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2012
- 2012-10-20 NO NO15158185A patent/NO2944700T3/no unknown
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2013
- 2013-07-11 US US13/939,400 patent/US9093444B2/en active Active
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2014
- 2014-07-08 CA CA2916672A patent/CA2916672C/en active Active
- 2014-07-08 EP EP14748016.4A patent/EP3019441B1/de active Active
- 2014-07-08 WO PCT/US2014/045756 patent/WO2015006327A1/en active Application Filing
- 2014-07-08 JP JP2016525429A patent/JP6122220B2/ja active Active
- 2014-07-08 CN CN201811055306.1A patent/CN109231160A/zh active Pending
- 2014-07-08 KR KR1020167000627A patent/KR101752107B1/ko active IP Right Grant
- 2014-07-08 CN CN201480039124.9A patent/CN105358473B/zh active Active
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2015
- 2015-06-10 US US14/736,042 patent/US9520332B2/en active Active
- 2015-12-22 IL IL243086A patent/IL243086A/en active IP Right Grant
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2016
- 2016-09-20 US US15/270,145 patent/US9966320B2/en active Active
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2018
- 2018-04-02 US US15/942,911 patent/US10262913B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
KR101752107B1 (ko) | 2017-06-28 |
US20170011977A1 (en) | 2017-01-12 |
CN105358473B (zh) | 2020-02-14 |
JP6122220B2 (ja) | 2017-04-26 |
WO2015006327A1 (en) | 2015-01-15 |
US20150279755A1 (en) | 2015-10-01 |
CA2916672A1 (en) | 2015-01-15 |
US20180226309A1 (en) | 2018-08-09 |
EP3019441B1 (de) | 2017-08-23 |
KR20160018789A (ko) | 2016-02-17 |
EP3019441A1 (de) | 2016-05-18 |
CA2916672C (en) | 2017-07-18 |
US9966320B2 (en) | 2018-05-08 |
JP2016531421A (ja) | 2016-10-06 |
US10262913B2 (en) | 2019-04-16 |
CN109231160A (zh) | 2019-01-18 |
US9093444B2 (en) | 2015-07-28 |
US9520332B2 (en) | 2016-12-13 |
US20150014854A1 (en) | 2015-01-15 |
IL243086A (en) | 2017-05-29 |
CN105358473A (zh) | 2016-02-24 |