NO20081386L - Method for texturing silicon surfaces and wafers thereof - Google Patents

Method for texturing silicon surfaces and wafers thereof

Info

Publication number
NO20081386L
NO20081386L NO20081386A NO20081386A NO20081386L NO 20081386 L NO20081386 L NO 20081386L NO 20081386 A NO20081386 A NO 20081386A NO 20081386 A NO20081386 A NO 20081386A NO 20081386 L NO20081386 L NO 20081386L
Authority
NO
Norway
Prior art keywords
wafers
silicon surfaces
texturing
texturing silicon
silicon
Prior art date
Application number
NO20081386A
Other languages
English (en)
Norwegian (no)
Inventor
Ingemar Olefjord
Timothy C Lommasson
Original Assignee
Rec Solar As
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rec Solar As filed Critical Rec Solar As
Priority to NO20081386A priority Critical patent/NO20081386L/no
Priority to RU2010143337/28A priority patent/RU2474008C2/ru
Priority to CN200980117261.9A priority patent/CN102113123B/zh
Priority to EP09720505A priority patent/EP2266142A2/fr
Priority to US12/922,349 priority patent/US8658544B2/en
Priority to PCT/NO2009/000092 priority patent/WO2009113874A2/fr
Priority to JP2010550624A priority patent/JP5172975B2/ja
Priority to KR1020107022983A priority patent/KR101300074B1/ko
Priority to CA2718397A priority patent/CA2718397C/fr
Publication of NO20081386L publication Critical patent/NO20081386L/no

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F3/00—Electrolytic etching or polishing
    • C25F3/02—Etching
    • C25F3/12—Etching of semiconducting materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Electromagnetism (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electrochemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Weting (AREA)
  • Photovoltaic Devices (AREA)
  • ing And Chemical Polishing (AREA)
NO20081386A 2008-03-14 2008-03-14 Method for texturing silicon surfaces and wafers thereof NO20081386L (no)

Priority Applications (9)

Application Number Priority Date Filing Date Title
NO20081386A NO20081386L (no) 2008-03-14 2008-03-14 Method for texturing silicon surfaces and wafers thereof
RU2010143337/28A RU2474008C2 (ru) 2008-03-14 2009-03-12 Способ текстурирования кремниевых поверхностей
CN200980117261.9A CN102113123B (zh) 2008-03-14 2009-03-12 织构化硅表面的方法及由该方法制造的晶片
EP09720505A EP2266142A2 (fr) 2008-03-14 2009-03-12 Procédé pour texturer des surfaces et des plaquettes de silicium associées
US12/922,349 US8658544B2 (en) 2008-03-14 2009-03-12 Method for texturing silicon surfaces and wafers thereof
PCT/NO2009/000092 WO2009113874A2 (fr) 2008-03-14 2009-03-12 Procédé pour texturer des surfaces et des plaquettes de silicium associées
JP2010550624A JP5172975B2 (ja) 2008-03-14 2009-03-12 シリコン表面をテクスチャ処理するための方法および該方法によって製造されたウェハ
KR1020107022983A KR101300074B1 (ko) 2008-03-14 2009-03-12 실리콘 표면을 텍스쳐링 하는 방법 및 그에 의한 웨이퍼
CA2718397A CA2718397C (fr) 2008-03-14 2009-03-12 Procede pour texturer des surfaces et des plaquettes de silicium associees

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NO20081386A NO20081386L (no) 2008-03-14 2008-03-14 Method for texturing silicon surfaces and wafers thereof

Publications (1)

Publication Number Publication Date
NO20081386L true NO20081386L (no) 2009-09-15

Family

ID=41065685

Family Applications (1)

Application Number Title Priority Date Filing Date
NO20081386A NO20081386L (no) 2008-03-14 2008-03-14 Method for texturing silicon surfaces and wafers thereof

Country Status (9)

Country Link
US (1) US8658544B2 (fr)
EP (1) EP2266142A2 (fr)
JP (1) JP5172975B2 (fr)
KR (1) KR101300074B1 (fr)
CN (1) CN102113123B (fr)
CA (1) CA2718397C (fr)
NO (1) NO20081386L (fr)
RU (1) RU2474008C2 (fr)
WO (1) WO2009113874A2 (fr)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE112010001432T5 (de) * 2009-03-31 2012-10-25 Kurita Water Industries, Ltd. Vorrichtung und Verfahren zur Aufbereitung einer Ätzlösung
JP5868155B2 (ja) * 2010-12-13 2016-02-24 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ 半導体の電気化学エッチング
JP5909671B2 (ja) * 2012-03-27 2016-04-27 パナソニックＩｐマネジメント株式会社 太陽電池の製造方法及び半導体材料からなる基板の製造方法
CN102730631B (zh) * 2012-07-10 2015-05-20 西南交通大学 一种多点接触模式下的大面积硅表面织构化加工方法
RU2600076C1 (ru) * 2015-07-08 2016-10-20 Федеральное государственное бюджетное учреждение науки Физико-технический институт им. А.Ф. Иоффе Российской академии наук Способ получения светопоглощающей кремниевой структуры
CN111146313B (zh) * 2019-03-08 2024-06-14 欧浦登（顺昌）光学有限公司 晶硅片微纳浊透复合绒面的制备方法及其应用
CN111524985A (zh) * 2020-04-28 2020-08-11 中国科学院电工研究所 一种多晶硅片表面制绒的方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3078219A (en) * 1958-11-03 1963-02-19 Westinghouse Electric Corp Surface treatment of silicon carbide
US5129982A (en) * 1991-03-15 1992-07-14 General Motors Corporation Selective electrochemical etching
KR950003953B1 (ko) * 1992-08-14 1995-04-21 주식회사금성사 태양전지의 제조방법
JPH0766437A (ja) * 1993-08-30 1995-03-10 Tonen Corp 光電変換装置用基板の製造方法
US5445718A (en) * 1994-01-24 1995-08-29 General Motors Corporation Electrochemical etch-stop on n-type silicon by injecting holes from a shallow p-type layer
US5949118A (en) * 1994-03-14 1999-09-07 Nippondenso Co., Ltd. Etching method for silicon substrates and semiconductor sensor
CN1072737C (zh) * 1995-10-17 2001-10-10 佳能株式会社 刻蚀方法
US6284670B1 (en) * 1997-07-23 2001-09-04 Denso Corporation Method of etching silicon wafer and silicon wafer
JP3602323B2 (ja) 1998-01-30 2004-12-15 三菱電機株式会社 太陽電池の製造方法
RU2139601C1 (ru) * 1998-12-04 1999-10-10 ООО Научно-производственная фирма "Кварк" Способ изготовления солнечного элемента с n+-p-p+ структурой
RU2210142C1 (ru) * 2002-04-17 2003-08-10 Общество с ограниченной ответственностью Научно-производственный центр завода "Красное знамя" Способ изготовления солнечного элемента с n+-p-p+ структурой
US20050148198A1 (en) * 2004-01-05 2005-07-07 Technion Research & Development Foundation Ltd. Texturing a semiconductor material using negative potential dissolution (NPD)
US7494936B2 (en) 2005-05-16 2009-02-24 Technion Research & Development Foundation Ltd. Method for electrochemical etching of semiconductor material using positive potential dissolution (PPD) in solutions free from hydrogen fluoride (HF)
ATE514193T1 (de) * 2006-08-19 2011-07-15 Univ Konstanz Verfahren zum texturieren von siliziumwafern zur herstellung von solarzellen
CN101271775B (zh) * 2008-04-30 2010-09-08 天津大学 一种铂合金电极及其制备方法

Also Published As

Publication number Publication date
US8658544B2 (en) 2014-02-25
KR20100133434A (ko) 2010-12-21
US20110059618A1 (en) 2011-03-10
WO2009113874A2 (fr) 2009-09-17
KR101300074B1 (ko) 2013-08-30
CA2718397A1 (fr) 2009-09-17
CN102113123A (zh) 2011-06-29
RU2474008C2 (ru) 2013-01-27
EP2266142A2 (fr) 2010-12-29
WO2009113874A3 (fr) 2010-07-08
CN102113123B (zh) 2014-06-18
JP5172975B2 (ja) 2013-03-27
RU2010143337A (ru) 2012-04-20
JP2011515576A (ja) 2011-05-19
CA2718397C (fr) 2015-11-24

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Legal Events

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FC2A Withdrawal, rejection or dismissal of laid open patent application