NO124401B - - Google Patents
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- Publication number
- NO124401B NO124401B NO17168A NO17168A NO124401B NO 124401 B NO124401 B NO 124401B NO 17168 A NO17168 A NO 17168A NO 17168 A NO17168 A NO 17168A NO 124401 B NO124401 B NO 124401B
- Authority
- NO
- Norway
- Prior art keywords
- conductivity type
- layer
- buried layer
- zone
- diffusion
- Prior art date
Links
- 239000010410 layer Substances 0.000 claims description 151
- 230000015556 catabolic process Effects 0.000 claims description 50
- 239000004065 semiconductor Substances 0.000 claims description 43
- 238000009792 diffusion process Methods 0.000 claims description 41
- 239000000758 substrate Substances 0.000 claims description 35
- 238000000926 separation method Methods 0.000 claims description 33
- 238000000034 method Methods 0.000 claims description 24
- 230000008878 coupling Effects 0.000 claims description 16
- 238000010168 coupling process Methods 0.000 claims description 16
- 238000005859 coupling reaction Methods 0.000 claims description 16
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 13
- 229910052796 boron Inorganic materials 0.000 claims description 13
- 238000004519 manufacturing process Methods 0.000 claims description 11
- 239000002019 doping agent Substances 0.000 claims description 10
- 229910052710 silicon Inorganic materials 0.000 claims description 9
- 239000010703 silicon Substances 0.000 claims description 9
- 229910052785 arsenic Inorganic materials 0.000 claims description 8
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 8
- 239000002344 surface layer Substances 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 230000000903 blocking effect Effects 0.000 description 5
- 230000006378 damage Effects 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 238000009413 insulation Methods 0.000 description 5
- 230000035515 penetration Effects 0.000 description 5
- 230000007704 transition Effects 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 230000000873 masking effect Effects 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229910002651 NO3 Inorganic materials 0.000 description 1
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000007669 thermal treatment Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/761—PN junctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
- Element Separation (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL6700755A NL6700755A (US06368396-20020409-C00016.png) | 1967-01-18 | 1967-01-18 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NO124401B true NO124401B (US06368396-20020409-C00016.png) | 1972-04-10 |
Family
ID=19799016
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NO17168A NO124401B (US06368396-20020409-C00016.png) | 1967-01-18 | 1968-01-15 |
Country Status (11)
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2174540B (en) * | 1985-05-02 | 1989-02-15 | Texas Instruments Ltd | Intergrated circuits |
| KR0171128B1 (ko) * | 1995-04-21 | 1999-02-01 | 김우중 | 수직형 바이폴라 트랜지스터 |
-
1967
- 1967-01-18 NL NL6700755A patent/NL6700755A/xx unknown
- 1967-12-20 DK DK640567A patent/DK119667B/da unknown
-
1968
- 1968-01-13 DE DE1968N0031956 patent/DE1639342B2/de active Granted
- 1968-01-15 AT AT38268A patent/AT300037B/de not_active IP Right Cessation
- 1968-01-15 NO NO17168A patent/NO124401B/no unknown
- 1968-01-15 SE SE48168A patent/SE345555B/xx unknown
- 1968-01-15 GB GB213568A patent/GB1218603A/en not_active Expired
- 1968-01-15 CH CH56268A patent/CH470764A/de not_active IP Right Cessation
- 1968-01-16 BE BE709451D patent/BE709451A/xx unknown
- 1968-01-16 ES ES349367A patent/ES349367A1/es not_active Expired
- 1968-01-17 FR FR1562929D patent/FR1562929A/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| SE345555B (US06368396-20020409-C00016.png) | 1972-05-29 |
| BE709451A (US06368396-20020409-C00016.png) | 1968-07-16 |
| DK119667B (da) | 1971-02-08 |
| NL6700755A (US06368396-20020409-C00016.png) | 1968-07-19 |
| CH470764A (de) | 1969-03-31 |
| ES349367A1 (es) | 1969-09-16 |
| AT300037B (de) | 1972-07-10 |
| DE1639342A1 (de) | 1971-02-04 |
| DE1639342B2 (de) | 1977-06-02 |
| FR1562929A (US06368396-20020409-C00016.png) | 1969-04-11 |
| GB1218603A (en) | 1971-01-06 |
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