NO119600B - - Google Patents
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- Publication number
- NO119600B NO119600B NO66163424A NO16342466A NO119600B NO 119600 B NO119600 B NO 119600B NO 66163424 A NO66163424 A NO 66163424A NO 16342466 A NO16342466 A NO 16342466A NO 119600 B NO119600 B NO 119600B
- Authority
- NO
- Norway
- Prior art keywords
- sinter
- disc
- semiconductor
- metal
- plate
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 claims description 41
- 229910052751 metal Inorganic materials 0.000 claims description 22
- 239000002184 metal Substances 0.000 claims description 22
- 239000000463 material Substances 0.000 claims description 14
- 229910002804 graphite Inorganic materials 0.000 claims description 10
- 239000010439 graphite Substances 0.000 claims description 10
- 239000000314 lubricant Substances 0.000 claims description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 7
- SDDGNMXIOGQCCH-UHFFFAOYSA-N 3-fluoro-n,n-dimethylaniline Chemical compound CN(C)C1=CC=CC(F)=C1 SDDGNMXIOGQCCH-UHFFFAOYSA-N 0.000 claims description 4
- 150000001875 compounds Chemical class 0.000 claims description 4
- CWQXQMHSOZUFJS-UHFFFAOYSA-N molybdenum disulfide Chemical compound S=[Mo]=S CWQXQMHSOZUFJS-UHFFFAOYSA-N 0.000 claims description 4
- 229910001092 metal group alloy Inorganic materials 0.000 claims description 2
- 150000002739 metals Chemical class 0.000 claims 1
- 239000002775 capsule Substances 0.000 description 17
- 239000010410 layer Substances 0.000 description 16
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 15
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 13
- 229910052750 molybdenum Inorganic materials 0.000 description 13
- 239000011733 molybdenum Substances 0.000 description 13
- 229910052802 copper Inorganic materials 0.000 description 12
- 239000010949 copper Substances 0.000 description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- 235000012431 wafers Nutrition 0.000 description 8
- 239000000843 powder Substances 0.000 description 7
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 5
- 238000005245 sintering Methods 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 229910000831 Steel Inorganic materials 0.000 description 3
- KAPYVWKEUSXLKC-UHFFFAOYSA-N [Sb].[Au] Chemical compound [Sb].[Au] KAPYVWKEUSXLKC-UHFFFAOYSA-N 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000010959 steel Substances 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- LPKRZVYTQQECCM-UHFFFAOYSA-N bis(sulfanylidene)molybdenum copper Chemical compound [Mo](=S)=S.[Cu] LPKRZVYTQQECCM-UHFFFAOYSA-N 0.000 description 2
- AFYHQAXRYLCFCB-UHFFFAOYSA-N copper;selanylidenetungsten Chemical compound [Cu].[W]=[Se] AFYHQAXRYLCFCB-UHFFFAOYSA-N 0.000 description 2
- 238000005868 electrolysis reaction Methods 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 229910015367 Au—Sb Inorganic materials 0.000 description 1
- 229910000640 Fe alloy Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000005489 elastic deformation Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000010445 mica Substances 0.000 description 1
- 229910052618 mica group Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- 239000002893 slag Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000009966 trimming Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/71—Means for bonding not being attached to, or not being formed on, the surface to be connected
- H01L24/72—Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
- B22F7/002—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of porous nature
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C32/00—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ
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- H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Composite Materials (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Die Bonding (AREA)
- Powder Metallurgy (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES0097721 | 1965-06-22 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NO119600B true NO119600B (es) | 1970-06-08 |
Family
ID=7520937
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NO66163424A NO119600B (es) | 1965-06-22 | 1966-06-13 |
Country Status (12)
| Country | Link |
|---|---|
| US (1) | US3858096A (es) |
| AT (1) | AT263941B (es) |
| BE (1) | BE682817A (es) |
| CH (1) | CH449780A (es) |
| DE (1) | DE1514483B2 (es) |
| DK (1) | DK135650B (es) |
| ES (1) | ES328163A1 (es) |
| FR (1) | FR1484261A (es) |
| GB (1) | GB1132748A (es) |
| NL (1) | NL6608661A (es) |
| NO (1) | NO119600B (es) |
| SE (1) | SE316536B (es) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2014289A1 (de) * | 1970-03-25 | 1971-10-14 | Semikron Gleichrichterbau | Scheibenförmiges Halbleiterbauele ment und Verfahren zu seiner Herstellung |
| NL7203094A (es) * | 1971-03-11 | 1972-09-13 | ||
| GB1506735A (en) * | 1975-03-21 | 1978-04-12 | Westinghouse Brake & Signal | Semiconductor devices |
| US4127863A (en) * | 1975-10-01 | 1978-11-28 | Tokyo Shibaura Electric Co., Ltd. | Gate turn-off type thyristor with separate semiconductor resistive wafer providing emitter ballast |
| DE2556469C3 (de) * | 1975-12-15 | 1978-09-07 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Halbleiterbauelement mit Druckkontakt |
| CS182611B1 (en) * | 1976-03-18 | 1978-04-28 | Pavel Reichel | Power semiconducting element |
| US4392153A (en) * | 1978-05-01 | 1983-07-05 | General Electric Company | Cooled semiconductor power module including structured strain buffers without dry interfaces |
| JPS57130441A (en) * | 1981-02-06 | 1982-08-12 | Hitachi Ltd | Integrated circuit device |
| US4769744A (en) * | 1983-08-04 | 1988-09-06 | General Electric Company | Semiconductor chip packages having solder layers of enhanced durability |
| JPH0642337Y2 (ja) * | 1984-07-05 | 1994-11-02 | 三菱電機株式会社 | 半導体装置 |
| EP0638928B1 (de) * | 1993-08-09 | 1998-10-14 | Siemens Aktiengesellschaft | Leistungs-Halbleiterbauelement mit Druckkontakt |
| US6727524B2 (en) * | 2002-03-22 | 2004-04-27 | Kulite Semiconductor Products, Inc. | P-n junction structure |
| US7534979B2 (en) | 2004-05-14 | 2009-05-19 | Mitsubishi Denki Kabushiki Kaisha | Pressure-contact type rectifier with contact friction reducer |
| ATE535018T1 (de) | 2004-12-17 | 2011-12-15 | Siemens Ag | Halbleiterschaltmodul |
| DE102008055137A1 (de) * | 2008-12-23 | 2010-07-01 | Robert Bosch Gmbh | Elektrisches oder elektronisches Verbundbauteil sowie Verfahren zum Herstellen eines elektrischen oder elektronischen Verbundbauteils |
| JP6845444B1 (ja) * | 2019-10-15 | 2021-03-17 | 千住金属工業株式会社 | 接合材、接合材の製造方法及び接合体 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL264799A (es) * | 1960-06-21 | |||
| US3293508A (en) * | 1964-04-21 | 1966-12-20 | Int Rectifier Corp | Compression connected semiconductor device |
| US3413532A (en) * | 1965-02-08 | 1968-11-26 | Westinghouse Electric Corp | Compression bonded semiconductor device |
-
1965
- 1965-06-22 DE DE19651514483 patent/DE1514483B2/de active Pending
-
1966
- 1966-06-09 DK DK295566A patent/DK135650B/da unknown
- 1966-06-13 CH CH851866A patent/CH449780A/de unknown
- 1966-06-13 NO NO66163424A patent/NO119600B/no unknown
- 1966-06-15 AT AT569966A patent/AT263941B/de active
- 1966-06-20 ES ES0328163A patent/ES328163A1/es not_active Expired
- 1966-06-20 BE BE682817D patent/BE682817A/xx unknown
- 1966-06-21 SE SE844466A patent/SE316536B/xx unknown
- 1966-06-21 GB GB2776366A patent/GB1132748A/en not_active Expired
- 1966-06-21 FR FR66362A patent/FR1484261A/fr not_active Expired
- 1966-06-22 NL NL6608661A patent/NL6608661A/xx unknown
-
1972
- 1972-08-04 US US00277925A patent/US3858096A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| DK135650C (es) | 1977-10-31 |
| SE316536B (es) | 1969-10-27 |
| DE1514483A1 (de) | 1970-03-26 |
| DE1514483B2 (de) | 1971-05-06 |
| DK135650B (da) | 1977-05-31 |
| NL6608661A (es) | 1966-12-23 |
| BE682817A (es) | 1966-12-20 |
| CH449780A (de) | 1968-01-15 |
| FR1484261A (fr) | 1967-06-09 |
| ES328163A1 (es) | 1967-04-01 |
| US3858096A (en) | 1974-12-31 |
| GB1132748A (en) | 1968-11-06 |
| AT263941B (de) | 1968-08-12 |
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