NL9302046A - Halfgeleiderlaser met lichtmodulator en bijbehorende produktiewerkwijze. - Google Patents

Halfgeleiderlaser met lichtmodulator en bijbehorende produktiewerkwijze. Download PDF

Info

Publication number
NL9302046A
NL9302046A NL9302046A NL9302046A NL9302046A NL 9302046 A NL9302046 A NL 9302046A NL 9302046 A NL9302046 A NL 9302046A NL 9302046 A NL9302046 A NL 9302046A NL 9302046 A NL9302046 A NL 9302046A
Authority
NL
Netherlands
Prior art keywords
semiconductor
layer
light modulator
carrier
semiconductor laser
Prior art date
Application number
NL9302046A
Other languages
English (en)
Dutch (nl)
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of NL9302046A publication Critical patent/NL9302046A/nl

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0601—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium comprising an absorbing region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0265—Intensity modulators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0207—Substrates having a special shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3202—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3428—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers layer orientation perpendicular to the substrate

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
NL9302046A 1992-12-28 1993-11-25 Halfgeleiderlaser met lichtmodulator en bijbehorende produktiewerkwijze. NL9302046A (nl)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP36111092 1992-12-28
JP4361110A JPH06204454A (ja) 1992-12-28 1992-12-28 光変調器付半導体レーザ及びその製造方法

Publications (1)

Publication Number Publication Date
NL9302046A true NL9302046A (nl) 1994-07-18

Family

ID=18472244

Family Applications (1)

Application Number Title Priority Date Filing Date
NL9302046A NL9302046A (nl) 1992-12-28 1993-11-25 Halfgeleiderlaser met lichtmodulator en bijbehorende produktiewerkwijze.

Country Status (4)

Country Link
US (1) US5383216A (ja)
JP (1) JPH06204454A (ja)
GB (1) GB2273813B (ja)
NL (1) NL9302046A (ja)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2746065B2 (ja) * 1993-07-29 1998-04-28 日本電気株式会社 光半導体素子の製造方法
JP3285426B2 (ja) * 1993-08-04 2002-05-27 株式会社日立製作所 半導体光集積素子及びその製造方法
JPH0794833A (ja) * 1993-09-22 1995-04-07 Mitsubishi Electric Corp 半導体レーザおよびその製造方法
DE19652529A1 (de) * 1996-12-17 1998-06-18 Siemens Ag Optoelektronisches Bauelement mit MQW-Strukturen
US6922278B2 (en) 2001-03-30 2005-07-26 Santur Corporation Switched laser array modulation with integral electroabsorption modulator
SE520139C2 (sv) * 2001-11-30 2003-06-03 Optillion Ab Lasermodulator med elektriskt separerade laser- och modulatorsektioner
US20040190580A1 (en) * 2003-03-04 2004-09-30 Bardia Pezeshki High-yield high-precision distributed feedback laser based on an array
JP3738849B2 (ja) * 2003-08-07 2006-01-25 セイコーエプソン株式会社 面発光型半導体レーザ、光モジュール、ならびに光伝達装置
US7573928B1 (en) 2003-09-05 2009-08-11 Santur Corporation Semiconductor distributed feedback (DFB) laser array with integrated attenuator
US20060104321A1 (en) * 2004-11-15 2006-05-18 Lightip Technologies Inc. Q-modulated semiconductor laser with electro-absorptive grating structures
US7864396B1 (en) * 2006-10-31 2011-01-04 Hrl Laboratories, Llc Vertical cavity multiple quantum well device with simultaneous modulation and photodetection capability

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55165691A (en) * 1979-06-13 1980-12-24 Nec Corp Compound semiconductor laser element
US4563765A (en) * 1982-01-29 1986-01-07 Massachusetts Institute Of Technology Intra-cavity loss-modulated diode laser
JPS5968988A (ja) * 1982-10-12 1984-04-19 Nec Corp 半導体レ−ザ
US4622671A (en) * 1983-02-25 1986-11-11 At&T Bell Laboratories Multicavity optical device
JPH0632332B2 (ja) * 1984-08-24 1994-04-27 日本電気株式会社 半導体レ−ザ装置
JPS6155981A (ja) * 1984-08-27 1986-03-20 Kokusai Denshin Denwa Co Ltd <Kdd> 半導体発光素子
JPS61160987A (ja) * 1985-01-09 1986-07-21 Nec Corp 集積型半導体光素子とその製造方法
US4888783A (en) * 1987-03-20 1989-12-19 Mitsubishi Denki Kabushiki Kaisha Semiconductor laser device
US4802182A (en) * 1987-11-05 1989-01-31 Xerox Corporation Monolithic two dimensional waveguide coupled cavity laser/modulator
FR2673333A1 (fr) * 1991-02-27 1992-08-28 Alsthom Cge Alcatel Laser semiconducteur a absorbeur saturable.
FR2681191A1 (fr) * 1991-09-06 1993-03-12 France Telecom Composant integre laser-modulateur a super-reseau tres couple.

Also Published As

Publication number Publication date
GB2273813A (en) 1994-06-29
US5383216A (en) 1995-01-17
JPH06204454A (ja) 1994-07-22
GB9323641D0 (en) 1994-01-05
GB2273813B (en) 1996-08-28

Similar Documents

Publication Publication Date Title
US5991322A (en) Semiconductor optical device
US5288659A (en) Photonic-integrated-circuit fabrication process
US6184542B1 (en) Superluminescent diode and optical amplifier with extended bandwidth
US5539763A (en) Semiconductor lasers and methods for fabricating semiconductor lasers
EP0853831B1 (en) Optical filters
US4805184A (en) Ridge waveguide optical devices
US4815087A (en) High speed stable light emitting semiconductor device with low threshold current
US5208821A (en) Buried heterostructure lasers using MOCVD growth over patterned substrates
EP0378098B1 (en) Semiconductor optical device
JPH0656906B2 (ja) 半導体レ−ザ装置
NL9302046A (nl) Halfgeleiderlaser met lichtmodulator en bijbehorende produktiewerkwijze.
JPH11220212A (ja) 光素子、光素子の駆動方法及び半導体レーザ素子
JPH0927658A (ja) 半導体光集積回路およびその製造方法
EP1372228B1 (en) Integrated semiconductor laser and waveguide device
US5756373A (en) Method for fabricating optical semiconductor device
US20050185689A1 (en) Optoelectronic device having a Discrete Bragg Reflector and an electro-absorption modulator
JP2836822B2 (ja) 導波路型半導体光素子の製造方法
NL9000255A (nl) Een halfgeleiderlaserinrichting en een productiewerkwijze daarvoor.
JPH05145169A (ja) 半導体分布帰還型レーザ装置
KR100745918B1 (ko) 반도체 광 소자, 반도체 광 소자의 제조 방법 및 광 모듈
JP3700245B2 (ja) 位相シフト型分布帰還半導体レーザ
JP2001326423A (ja) 半導体光素子及びその製造方法
JP2771276B2 (ja) 半導体光集積素子とその製造方法
JPH06283802A (ja) 半導体レーザ装置及びその製造方法
JPH02252284A (ja) 半導体レーザアレイ

Legal Events

Date Code Title Description
BV The patent application has lapsed