NL8802011A - Een halfgeleiderlaserinrichting. - Google Patents
Een halfgeleiderlaserinrichting. Download PDFInfo
- Publication number
- NL8802011A NL8802011A NL8802011A NL8802011A NL8802011A NL 8802011 A NL8802011 A NL 8802011A NL 8802011 A NL8802011 A NL 8802011A NL 8802011 A NL8802011 A NL 8802011A NL 8802011 A NL8802011 A NL 8802011A
- Authority
- NL
- Netherlands
- Prior art keywords
- layer
- groove
- type
- laser device
- laser
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2237—Buried stripe structure with a non-planar active layer
Landscapes
- Physics & Mathematics (AREA)
- Geometry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62205764A JP2553580B2 (ja) | 1987-08-19 | 1987-08-19 | 半導体レ−ザ装置 |
JP20576487 | 1987-08-19 |
Publications (1)
Publication Number | Publication Date |
---|---|
NL8802011A true NL8802011A (nl) | 1989-03-16 |
Family
ID=16512281
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL8802011A NL8802011A (nl) | 1987-08-19 | 1988-08-12 | Een halfgeleiderlaserinrichting. |
Country Status (4)
Country | Link |
---|---|
US (1) | US4841535A (de) |
JP (1) | JP2553580B2 (de) |
DE (1) | DE3827961A1 (de) |
NL (1) | NL8802011A (de) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02253682A (ja) * | 1989-03-27 | 1990-10-12 | Mitsubishi Electric Corp | 半導体レーザ |
JPH03127891A (ja) * | 1989-10-13 | 1991-05-30 | Mitsubishi Electric Corp | 半導体レーザ装置 |
US5058120A (en) * | 1990-02-28 | 1991-10-15 | Kabushiki Kaisha Toshiba | Visible light emitting semiconductor laser with inverse mesa-shaped groove section |
JPH0461292A (ja) * | 1990-06-28 | 1992-02-27 | Mitsubishi Electric Corp | 半導体レーザ |
DE69406049T2 (de) * | 1993-06-04 | 1998-04-16 | Sharp Kk | Lichtmittierende Halbleitervorrichtung mit einer dritten Begrenzungsschicht |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2487138A1 (fr) * | 1980-07-16 | 1982-01-22 | Sony Corp | Laser a semi-conducteur |
EP0155152A2 (de) * | 1984-03-13 | 1985-09-18 | Mitsubishi Denki Kabushiki Kaisha | Halbleiterlaser |
JPS60217689A (ja) * | 1984-04-13 | 1985-10-31 | Oki Electric Ind Co Ltd | 半導体発光素子の製造方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA1065460A (en) * | 1975-06-23 | 1979-10-30 | Robert D. Burnham | Buried-heterostructure diode injection laser |
JPS57147292A (en) * | 1981-03-06 | 1982-09-11 | Hitachi Ltd | Semiconductor laser and manufacture thereof |
JPS6252984A (ja) * | 1985-09-02 | 1987-03-07 | Toshiba Corp | 自己整合電流狭窄型半導体発光素子 |
-
1987
- 1987-08-19 JP JP62205764A patent/JP2553580B2/ja not_active Expired - Lifetime
-
1988
- 1988-08-11 US US07/231,003 patent/US4841535A/en not_active Expired - Fee Related
- 1988-08-12 NL NL8802011A patent/NL8802011A/nl not_active Application Discontinuation
- 1988-08-17 DE DE3827961A patent/DE3827961A1/de active Granted
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2487138A1 (fr) * | 1980-07-16 | 1982-01-22 | Sony Corp | Laser a semi-conducteur |
EP0155152A2 (de) * | 1984-03-13 | 1985-09-18 | Mitsubishi Denki Kabushiki Kaisha | Halbleiterlaser |
JPS60217689A (ja) * | 1984-04-13 | 1985-10-31 | Oki Electric Ind Co Ltd | 半導体発光素子の製造方法 |
Non-Patent Citations (2)
Title |
---|
PATENT ABSTRACTS OF JAPAN vol. 010, no. 069 (E - 389) 18 March 1986 (1986-03-18) * |
Y.MIHASHI ET AL.: "A novel self-aligned AlGaAs laser with bent active layer grown by MOCVD", INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST, 1 December 1985 (1985-12-01), WASHINGTON, US, pages 646 - 649, XP000713557 * |
Also Published As
Publication number | Publication date |
---|---|
US4841535A (en) | 1989-06-20 |
DE3827961C2 (de) | 1993-02-18 |
DE3827961A1 (de) | 1989-03-02 |
JP2553580B2 (ja) | 1996-11-13 |
JPS6448486A (en) | 1989-02-22 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
BB | A search report has been drawn up | ||
BC | A request for examination has been filed | ||
BV | The patent application has lapsed |