NL87573C - - Google Patents
Info
- Publication number
- NL87573C NL87573C NL164295A NL164295A NL87573C NL 87573 C NL87573 C NL 87573C NL 164295 A NL164295 A NL 164295A NL 164295 A NL164295 A NL 164295A NL 87573 C NL87573 C NL 87573C
- Authority
- NL
- Netherlands
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/30—Devices controlled by electric currents or voltages
- H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H10D48/34—Bipolar devices
- H10D48/345—Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/60—Impurity distributions or concentrations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
- H10D62/834—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F99/00—Subject matter not provided for in other groups of this subclass
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- H10P10/00—
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- H10P32/00—
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- H10P32/16—
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- H10P95/00—
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- H10P95/50—
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- H10W40/47—
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- H10W40/60—
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- H10W90/00—
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- H10W72/536—
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- H10W72/884—
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US18747850A | 1950-09-29 | 1950-09-29 | |
| US18749050A | 1950-09-29 | 1950-09-29 | |
| US748845XA | 1952-10-25 | 1952-10-25 | |
| US596943A US2994018A (en) | 1950-09-29 | 1956-07-10 | Asymmetrically conductive device and method of making the same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL87573C true NL87573C (cg-RX-API-DMAC10.html) | 1957-10-15 |
Family
ID=27491158
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL164295A NL87573C (cg-RX-API-DMAC10.html) | 1950-09-29 | 1951-09-28 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US2994018A (cg-RX-API-DMAC10.html) |
| BE (2) | BE523775A (cg-RX-API-DMAC10.html) |
| DE (2) | DE976360C (cg-RX-API-DMAC10.html) |
| FR (4) | FR1048471A (cg-RX-API-DMAC10.html) |
| GB (3) | GB727900A (cg-RX-API-DMAC10.html) |
| NL (1) | NL87573C (cg-RX-API-DMAC10.html) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE520380A (cg-RX-API-DMAC10.html) * | 1952-06-02 | |||
| US2742383A (en) * | 1952-08-09 | 1956-04-17 | Hughes Aircraft Co | Germanium junction-type semiconductor devices |
| DE977264C (de) * | 1953-03-25 | 1965-08-12 | Siemens Ag | Spannungsabhaengiger Halbleiterkondensator |
| NL91651C (cg-RX-API-DMAC10.html) * | 1953-12-09 | |||
| US2928761A (en) * | 1954-07-01 | 1960-03-15 | Siemens Ag | Methods of producing junction-type semi-conductor devices |
| NL199836A (cg-RX-API-DMAC10.html) * | 1954-08-23 | 1900-01-01 | ||
| DE977180C (de) * | 1955-03-05 | 1965-06-24 | Siemens Ag | Verfahren zum elektrolytischen oertlich begrenzten Abtragen wie Bohren und Zerteilen halbleitenden kristallinen Materials |
| US2762001A (en) * | 1955-03-23 | 1956-09-04 | Globe Union Inc | Fused junction transistor assemblies |
| US2825667A (en) * | 1955-05-10 | 1958-03-04 | Rca Corp | Methods of making surface alloyed semiconductor devices |
| US2835613A (en) * | 1955-09-13 | 1958-05-20 | Philips Corp | Method of surface-treating semi-conductors |
| US2879188A (en) * | 1956-03-05 | 1959-03-24 | Westinghouse Electric Corp | Processes for making transistors |
| DE1208412B (de) * | 1959-11-13 | 1966-01-05 | Siemens Ag | Elektrisches Halbleiterbauelement mit mindestens einem an die Oberflaeche des Halbleiterkoerpers tretenden pn-UEbergang und Verfahren zum Herstellen eines solchen Bauelements |
| DE1228002B (de) * | 1961-03-07 | 1966-11-03 | Gerhard Gille Dr Ing | Trockengleichrichter |
| US3165429A (en) * | 1962-01-31 | 1965-01-12 | Westinghouse Electric Corp | Method of making a diffused base transistor |
| DE1639568B1 (de) * | 1963-12-07 | 1969-10-23 | Siemens Ag | Verfahren zum Herstellen einer Schaltdiode mit einem Halbleiterkoerper mit vier Zonen von abwechselnd unterschiedlichem Leitungstyp |
| GB1037199A (en) * | 1964-07-14 | 1966-07-27 | Standard Telephones Cables Ltd | Improvements in or relating to transistor manufacture |
| US3413528A (en) * | 1966-03-03 | 1968-11-26 | Atomic Energy Commission Usa | Lithium drifted semiconductor radiation detector |
| FR2543835B1 (fr) * | 1979-03-21 | 1988-11-25 | Minnesota Mining & Mfg | Electrode biomedicale |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US1994632A (en) * | 1933-05-11 | 1935-03-19 | Bell Telephone Labor Inc | Asymmetric conductor |
| US2402661A (en) * | 1941-03-01 | 1946-06-25 | Bell Telephone Labor Inc | Alternating current rectifier |
| US2505633A (en) * | 1946-03-18 | 1950-04-25 | Purdue Research Foundation | Alloys of germanium and method of making same |
| NL84061C (cg-RX-API-DMAC10.html) * | 1948-06-26 | |||
| US2502488A (en) * | 1948-09-24 | 1950-04-04 | Bell Telephone Labor Inc | Semiconductor amplifier |
| NL77451C (cg-RX-API-DMAC10.html) * | 1948-12-29 | |||
| US2666814A (en) * | 1949-04-27 | 1954-01-19 | Bell Telephone Labor Inc | Semiconductor translating device |
| DE840418C (de) * | 1949-05-30 | 1952-06-05 | Licentia Gmbh | Verfahren zum Herstellen Stoerstellen enthaltender Halbleiter, insbesondere fuer Trockengleichrichter |
| US2629672A (en) * | 1949-07-07 | 1953-02-24 | Bell Telephone Labor Inc | Method of making semiconductive translating devices |
| DE826175C (de) * | 1949-08-11 | 1951-12-27 | Siemens Ag | Verfahren zur Herstellung von Trockengleichrichtern, insbesondere Selengleichrichtern |
| NL82014C (cg-RX-API-DMAC10.html) * | 1949-11-30 | |||
| US2750544A (en) * | 1950-01-11 | 1956-06-12 | Bell Telephone Labor Inc | Silicon translating devices and methods of manufacture |
| US2792538A (en) * | 1950-09-14 | 1957-05-14 | Bell Telephone Labor Inc | Semiconductor translating devices with embedded electrode |
-
0
- BE BE506110D patent/BE506110A/xx unknown
- BE BE523775D patent/BE523775A/xx unknown
-
1951
- 1951-09-14 FR FR1048471D patent/FR1048471A/fr not_active Expired
- 1951-09-25 GB GB22405/51A patent/GB727900A/en not_active Expired
- 1951-09-25 GB GB22404/51A patent/GB728129A/en not_active Expired
- 1951-09-28 NL NL164295A patent/NL87573C/xx active
- 1951-09-29 DE DEI4676A patent/DE976360C/de not_active Expired
- 1951-09-29 DE DEJ4677A patent/DE976348C/de not_active Expired
-
1953
- 1953-02-05 FR FR65388D patent/FR65388E/fr not_active Expired
- 1953-10-20 GB GB28950/53A patent/GB748845A/en not_active Expired
- 1953-10-22 FR FR65476D patent/FR65476E/fr not_active Expired
-
1956
- 1956-07-10 US US596943A patent/US2994018A/en not_active Expired - Lifetime
-
1957
- 1957-07-10 FR FR1192936D patent/FR1192936A/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| FR1192936A (fr) | 1959-10-29 |
| US2994018A (en) | 1961-07-25 |
| DE976348C (de) | 1963-07-18 |
| GB728129A (en) | 1955-04-13 |
| GB748845A (en) | 1956-05-09 |
| BE506110A (cg-RX-API-DMAC10.html) | |
| FR65388E (fr) | 1956-02-09 |
| FR1048471A (fr) | 1953-12-22 |
| GB727900A (en) | 1955-04-13 |
| DE976360C (de) | 1963-08-01 |
| BE523775A (cg-RX-API-DMAC10.html) | |
| FR65476E (fr) | 1956-02-21 |