NL8702484A - Door een lading gekoppelde inrichtingen. - Google Patents
Door een lading gekoppelde inrichtingen. Download PDFInfo
- Publication number
- NL8702484A NL8702484A NL8702484A NL8702484A NL8702484A NL 8702484 A NL8702484 A NL 8702484A NL 8702484 A NL8702484 A NL 8702484A NL 8702484 A NL8702484 A NL 8702484A NL 8702484 A NL8702484 A NL 8702484A
- Authority
- NL
- Netherlands
- Prior art keywords
- electrode
- charge
- voltage
- substrate
- pulse
- Prior art date
Links
- 239000000758 substrate Substances 0.000 claims description 158
- 238000007667 floating Methods 0.000 claims description 68
- 239000004065 semiconductor Substances 0.000 claims description 19
- 239000000463 material Substances 0.000 claims description 12
- 230000005669 field effect Effects 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 86
- 238000010276 construction Methods 0.000 description 74
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 67
- 229920005591 polysilicon Polymers 0.000 description 65
- 229910052782 aluminium Inorganic materials 0.000 description 59
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 58
- 238000012546 transfer Methods 0.000 description 45
- 239000000377 silicon dioxide Substances 0.000 description 43
- 235000012239 silicon dioxide Nutrition 0.000 description 42
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 40
- 229910052710 silicon Inorganic materials 0.000 description 40
- 239000010703 silicon Substances 0.000 description 40
- 239000002800 charge carrier Substances 0.000 description 29
- 238000000034 method Methods 0.000 description 28
- 238000003860 storage Methods 0.000 description 25
- 230000004044 response Effects 0.000 description 21
- 230000006870 function Effects 0.000 description 20
- 230000008878 coupling Effects 0.000 description 19
- 238000010168 coupling process Methods 0.000 description 19
- 238000005859 coupling reaction Methods 0.000 description 19
- 230000015654 memory Effects 0.000 description 16
- 239000003990 capacitor Substances 0.000 description 15
- 230000001172 regenerating effect Effects 0.000 description 13
- 239000010409 thin film Substances 0.000 description 13
- 238000004519 manufacturing process Methods 0.000 description 12
- 239000000969 carrier Substances 0.000 description 11
- 238000009792 diffusion process Methods 0.000 description 9
- 230000008569 process Effects 0.000 description 9
- 239000004020 conductor Substances 0.000 description 8
- 230000000295 complement effect Effects 0.000 description 7
- 239000010408 film Substances 0.000 description 7
- 229910052720 vanadium Inorganic materials 0.000 description 7
- 230000008859 change Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 230000007246 mechanism Effects 0.000 description 6
- 230000002441 reversible effect Effects 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- 230000008929 regeneration Effects 0.000 description 5
- 238000011069 regeneration method Methods 0.000 description 5
- 230000005684 electric field Effects 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 229910044991 metal oxide Inorganic materials 0.000 description 4
- 150000004706 metal oxides Chemical class 0.000 description 4
- 239000013642 negative control Substances 0.000 description 4
- 238000005036 potential barrier Methods 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 238000004364 calculation method Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 239000003989 dielectric material Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 238000012856 packing Methods 0.000 description 3
- 230000000644 propagated effect Effects 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 238000005496 tempering Methods 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000036961 partial effect Effects 0.000 description 2
- 230000010363 phase shift Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000001902 propagating effect Effects 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- BIIBYWQGRFWQKM-JVVROLKMSA-N (2S)-N-[4-(cyclopropylamino)-3,4-dioxo-1-[(3S)-2-oxopyrrolidin-3-yl]butan-2-yl]-2-[[(E)-3-(2,4-dichlorophenyl)prop-2-enoyl]amino]-4,4-dimethylpentanamide Chemical compound CC(C)(C)C[C@@H](C(NC(C[C@H](CCN1)C1=O)C(C(NC1CC1)=O)=O)=O)NC(/C=C/C(C=CC(Cl)=C1)=C1Cl)=O BIIBYWQGRFWQKM-JVVROLKMSA-N 0.000 description 1
- BDEDPKFUFGCVCJ-UHFFFAOYSA-N 3,6-dihydroxy-8,8-dimethyl-1-oxo-3,4,7,9-tetrahydrocyclopenta[h]isochromene-5-carbaldehyde Chemical compound O=C1OC(O)CC(C(C=O)=C2O)=C1C1=C2CC(C)(C)C1 BDEDPKFUFGCVCJ-UHFFFAOYSA-N 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 102000016917 Complement C1 Human genes 0.000 description 1
- 108010028774 Complement C1 Proteins 0.000 description 1
- 108010028773 Complement C5 Proteins 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910000676 Si alloy Inorganic materials 0.000 description 1
- VYRNMWDESIRGOS-UHFFFAOYSA-N [Mo].[Au] Chemical compound [Mo].[Au] VYRNMWDESIRGOS-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- UTSDGYKWHMMTDM-UHFFFAOYSA-N alumane;tungsten Chemical compound [AlH3].[W] UTSDGYKWHMMTDM-UHFFFAOYSA-N 0.000 description 1
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 239000012491 analyte Substances 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- -1 for example Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000001208 nuclear magnetic resonance pulse sequence Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- XULSCZPZVQIMFM-IPZQJPLYSA-N odevixibat Chemical compound C12=CC(SC)=C(OCC(=O)N[C@@H](C(=O)N[C@@H](CC)C(O)=O)C=3C=CC(O)=CC=3)C=C2S(=O)(=O)NC(CCCC)(CCCC)CN1C1=CC=CC=C1 XULSCZPZVQIMFM-IPZQJPLYSA-N 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- UUWCBFKLGFQDME-UHFFFAOYSA-N platinum titanium Chemical compound [Ti].[Pt] UUWCBFKLGFQDME-UHFFFAOYSA-N 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000002829 reductive effect Effects 0.000 description 1
- 230000000284 resting effect Effects 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D44/00—Charge transfer devices
- H10D44/40—Charge-coupled devices [CCD]
- H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes
- H10D44/452—Input structures
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
- G11C19/287—Organisation of a multiplicity of shift registers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Solid State Image Pick-Up Elements (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10638171A | 1971-01-14 | 1971-01-14 | |
| US10638171 | 1971-01-14 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL8702484A true NL8702484A (nl) | 1988-02-01 |
Family
ID=22311099
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL8702484A NL8702484A (nl) | 1971-01-14 | 1987-10-16 | Door een lading gekoppelde inrichtingen. |
Country Status (5)
| Country | Link |
|---|---|
| JP (4) | JPS533208B1 (OSRAM) |
| CA (1) | CA1080847A (OSRAM) |
| IT (1) | IT946550B (OSRAM) |
| NL (1) | NL8702484A (OSRAM) |
| SE (4) | SE382879B (OSRAM) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56162917U (OSRAM) * | 1980-05-08 | 1981-12-03 | ||
| JPS579230U (OSRAM) * | 1980-06-18 | 1982-01-18 | ||
| JPS57201607A (en) * | 1981-06-04 | 1982-12-10 | Uroko Seisakusho Co Ltd | Method and device for manufacturing veneer |
| NL8400453A (nl) * | 1984-02-13 | 1985-09-02 | Philips Nv | Ladingssensor. |
| JPS6236177U (OSRAM) * | 1985-08-20 | 1987-03-03 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3514765A (en) * | 1969-05-23 | 1970-05-26 | Shell Oil Co | Sense amplifier comprising cross coupled mosfet's operating in a race mode for single device per bit mosfet memories |
| JPS5026910A (OSRAM) * | 1973-07-13 | 1975-03-20 |
-
1971
- 1971-12-09 CA CA129,812A patent/CA1080847A/en not_active Expired
-
1972
- 1972-01-13 SE SE7200369A patent/SE382879B/xx unknown
- 1972-01-13 IT IT19335/72A patent/IT946550B/it active
- 1972-01-13 JP JP656872A patent/JPS533208B1/ja active Pending
- 1972-01-13 JP JP656972A patent/JPS533209B1/ja active Pending
-
1975
- 1975-01-17 SE SE7500506A patent/SE403206B/xx unknown
- 1975-01-17 SE SE7500504A patent/SE404639B/xx unknown
- 1975-01-17 SE SE7500505A patent/SE403205B/xx unknown
-
1976
- 1976-12-10 JP JP51149305A patent/JPS5267279A/ja active Granted
- 1976-12-10 JP JP51149304A patent/JPS5267278A/ja active Granted
-
1987
- 1987-10-16 NL NL8702484A patent/NL8702484A/nl not_active Application Discontinuation
Also Published As
| Publication number | Publication date |
|---|---|
| JPS559831B2 (OSRAM) | 1980-03-12 |
| JPS5267279A (en) | 1977-06-03 |
| JPS5267278A (en) | 1977-06-03 |
| IT946550B (it) | 1973-05-21 |
| SE404639B (sv) | 1978-10-16 |
| SE7500506L (OSRAM) | 1975-01-17 |
| SE382879B (sv) | 1976-02-16 |
| SE403205B (sv) | 1978-07-31 |
| SE7500504L (OSRAM) | 1975-01-17 |
| JPS533208B1 (OSRAM) | 1978-02-04 |
| JPS556305B2 (OSRAM) | 1980-02-15 |
| CA1080847A (en) | 1980-07-01 |
| JPS533209B1 (OSRAM) | 1978-02-04 |
| SE7500505L (OSRAM) | 1975-01-17 |
| SE403206B (sv) | 1978-07-31 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A1A | A request for search or an international-type search has been filed | ||
| BB | A search report has been drawn up | ||
| BC | A request for examination has been filed | ||
| BV | The patent application has lapsed |