NL8603009A - Halfgeleiderlaser en werkwijze ter vervaardiging daarvan. - Google Patents

Halfgeleiderlaser en werkwijze ter vervaardiging daarvan. Download PDF

Info

Publication number
NL8603009A
NL8603009A NL8603009A NL8603009A NL8603009A NL 8603009 A NL8603009 A NL 8603009A NL 8603009 A NL8603009 A NL 8603009A NL 8603009 A NL8603009 A NL 8603009A NL 8603009 A NL8603009 A NL 8603009A
Authority
NL
Netherlands
Prior art keywords
layer
conductivity type
passive
semiconductor laser
region
Prior art date
Application number
NL8603009A
Other languages
English (en)
Dutch (nl)
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Priority to NL8603009A priority Critical patent/NL8603009A/nl
Priority to DE8787202312T priority patent/DE3774542D1/de
Priority to JP62295397A priority patent/JP2537924B2/ja
Priority to EP87202312A priority patent/EP0270170B1/fr
Publication of NL8603009A publication Critical patent/NL8603009A/nl
Priority to US07/304,894 priority patent/US4870650A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
    • H01S5/2277—Buried mesa structure ; Striped active layer mesa created by etching double channel planar buried heterostructure [DCPBH] laser

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
NL8603009A 1986-11-27 1986-11-27 Halfgeleiderlaser en werkwijze ter vervaardiging daarvan. NL8603009A (nl)

Priority Applications (5)

Application Number Priority Date Filing Date Title
NL8603009A NL8603009A (nl) 1986-11-27 1986-11-27 Halfgeleiderlaser en werkwijze ter vervaardiging daarvan.
DE8787202312T DE3774542D1 (de) 1986-11-27 1987-11-25 Halbleiterlaser und verfahren zu seiner herstellung.
JP62295397A JP2537924B2 (ja) 1986-11-27 1987-11-25 半導体レ―ザ
EP87202312A EP0270170B1 (fr) 1986-11-27 1987-11-25 Laser à semi-conducteurs et sa méthode de fabrication
US07/304,894 US4870650A (en) 1986-11-27 1989-01-30 Semiconductor laser having a boundary-region absorption layer

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL8603009A NL8603009A (nl) 1986-11-27 1986-11-27 Halfgeleiderlaser en werkwijze ter vervaardiging daarvan.
NL8603009 1986-11-27

Publications (1)

Publication Number Publication Date
NL8603009A true NL8603009A (nl) 1988-06-16

Family

ID=19848893

Family Applications (1)

Application Number Title Priority Date Filing Date
NL8603009A NL8603009A (nl) 1986-11-27 1986-11-27 Halfgeleiderlaser en werkwijze ter vervaardiging daarvan.

Country Status (5)

Country Link
US (1) US4870650A (fr)
EP (1) EP0270170B1 (fr)
JP (1) JP2537924B2 (fr)
DE (1) DE3774542D1 (fr)
NL (1) NL8603009A (fr)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2679388B1 (fr) * 1991-07-19 1995-02-10 Cit Alcatel Laser semi-conducteur a double canal et son procede de realisation.
DE69404367T2 (de) * 1993-03-25 1998-02-26 Nec Corp Planar-Vergrabene-Heterostruktur-Laserdiode mit zwei Kanälen und niedrigem Leckstrom
JP2699888B2 (ja) * 1994-09-20 1998-01-19 日本電気株式会社 埋め込み型ｐ型基板半導体レーザ
US5956360A (en) * 1997-03-28 1999-09-21 Lucent Technologies Inc. Uncooled lasers with reduced low bias capacitance effect
DE19963807A1 (de) * 1999-12-30 2001-07-19 Osram Opto Semiconductors Gmbh Streifenlaserdiodenelement
US6862300B1 (en) * 2002-09-17 2005-03-01 Bookham Technology Plc High power semiconductor laser diode and method for making such a diode
DE102017108435A1 (de) * 2017-04-20 2018-10-25 Osram Opto Semiconductors Gmbh Halbleiterlaserdiode und Verfahren zur Herstellung einer Halbleiterlaserdiode

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS576265U (fr) * 1980-06-13 1982-01-13
JPS5957486A (ja) * 1982-09-27 1984-04-03 Nec Corp 埋め込み形半導体レ−ザ
GB2139422B (en) * 1983-03-24 1987-06-03 Hitachi Ltd Semiconductor laser and method of fabricating the same
JPS6034088A (ja) * 1983-08-04 1985-02-21 Nec Corp 光半導体素子
NL8401172A (nl) * 1984-04-12 1985-11-01 Philips Nv Halfgeleiderlaser.
JPS617682A (ja) * 1984-06-22 1986-01-14 Nec Corp 双安定半導体レ−ザ
JPS61150393A (ja) * 1984-12-25 1986-07-09 Fujitsu Ltd 半導体レ−ザおよびその製造方法
JPS61164287A (ja) * 1985-01-16 1986-07-24 Nec Corp 半導体レ−ザ
JPH0766994B2 (ja) * 1985-02-19 1995-07-19 シャープ株式会社 半導体レーザ素子
FR2581801B1 (fr) * 1985-05-13 1987-06-26 Devoldere Pascal Procede de realisation de lasers a semiconducteurs a jonctions bloquantes assurant un confinement electrique

Also Published As

Publication number Publication date
DE3774542D1 (de) 1991-12-19
JPS63142888A (ja) 1988-06-15
US4870650A (en) 1989-09-26
EP0270170A1 (fr) 1988-06-08
JP2537924B2 (ja) 1996-09-25
EP0270170B1 (fr) 1991-11-13

Similar Documents

Publication Publication Date Title
US4136928A (en) Optical integrated circuit including junction laser with oblique mirror
EP0064339B1 (fr) Laser sémiconducteur
KR100648392B1 (ko) 인듐인-계 구조들에서 아연 확산을 차단하기 위한 장벽으로서 인듐인-계 층에서의 알루미늄 스파이크들을 포함하는 전자 디바이스 및 광전자 디바이스
JPH06224521A (ja) 集積化短キャビティ・レーザ
GB2230381A (en) Superluminescent diode
US4416012A (en) W-Guide buried heterostructure laser
EP0061938B1 (fr) Dispositif semiconducteur électroluminescent
Oomura et al. Low threshold InGaAsP/InP buried crescent laser with double current confinement structure
KR100381985B1 (ko) 수직공동표면방출레이저(vcsel)및그제조방법
NL8603009A (nl) Halfgeleiderlaser en werkwijze ter vervaardiging daarvan.
NL8602653A (nl) Halfgeleiderlaser en werkwijze ter vervaardiging daarvan.
Kasahara et al. Monolithically integrated high-speed light source using 1.3-µm wavelength DFB-DC-PBH laser
NL8602204A (nl) Dfb laser met anti-reflectielaag.
JPS60247988A (ja) 半導体レ−ザ
US4653057A (en) Semiconductor device for processing electro-magnetic radiation
NL8003728A (nl) Halfgeleiderlaser.
US5357124A (en) Superluminescent diode with stripe shaped doped region
US4521887A (en) W-shaped diffused stripe GaAs/AlGaAs laser
NL8702233A (nl) Dcpbh laser met goede temperatuurstabiliteit.
JPS6218782A (ja) 埋込み構造半導体レ−ザ
JPH03104292A (ja) 半導体レーザ
CA1189176A (fr) Laser a bande etroite planar a confinement de porteur de charge ameliore
JPS59130492A (ja) 半導体レ−ザ装置およびその製造方法
Streifer et al. Current Status Of (GaAI) As Diode Lasers
Fu et al. High-power InGaAsP/InP superluminescent diodes

Legal Events

Date Code Title Description
A1B A search report has been drawn up
BV The patent application has lapsed