NL8602653A - Halfgeleiderlaser en werkwijze ter vervaardiging daarvan. - Google Patents

Halfgeleiderlaser en werkwijze ter vervaardiging daarvan. Download PDF

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Publication number
NL8602653A
NL8602653A NL8602653A NL8602653A NL8602653A NL 8602653 A NL8602653 A NL 8602653A NL 8602653 A NL8602653 A NL 8602653A NL 8602653 A NL8602653 A NL 8602653A NL 8602653 A NL8602653 A NL 8602653A
Authority
NL
Netherlands
Prior art keywords
layer
passive
active
conductivity type
substrate region
Prior art date
Application number
NL8602653A
Other languages
English (en)
Dutch (nl)
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Priority to NL8602653A priority Critical patent/NL8602653A/nl
Priority to US07/104,896 priority patent/US4819243A/en
Priority to DE8787202014T priority patent/DE3778486D1/de
Priority to CA000549714A priority patent/CA1280498C/en
Priority to EP87202014A priority patent/EP0266826B1/en
Priority to JP62264030A priority patent/JPH0828548B2/ja
Publication of NL8602653A publication Critical patent/NL8602653A/nl

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18305—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] with emission through the substrate, i.e. bottom emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0207—Substrates having a special shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2222—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties
    • H01S5/2224—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties semi-insulating semiconductors

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
NL8602653A 1986-10-23 1986-10-23 Halfgeleiderlaser en werkwijze ter vervaardiging daarvan. NL8602653A (nl)

Priority Applications (6)

Application Number Priority Date Filing Date Title
NL8602653A NL8602653A (nl) 1986-10-23 1986-10-23 Halfgeleiderlaser en werkwijze ter vervaardiging daarvan.
US07/104,896 US4819243A (en) 1986-10-23 1987-10-06 Semiconductor laser with active layer having a radiation emitting active region therein which extends through and is bounded by a current limiting blocking layer
DE8787202014T DE3778486D1 (de) 1986-10-23 1987-10-20 Halbleiterlaser und verfahren zu dessen fabrikation.
CA000549714A CA1280498C (en) 1986-10-23 1987-10-20 Semiconductor laser and method of manufacturing same
EP87202014A EP0266826B1 (en) 1986-10-23 1987-10-20 Semiconductor laser and method of manufacturing same
JP62264030A JPH0828548B2 (ja) 1986-10-23 1987-10-21 半導体レーザおよびその製造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL8602653 1986-10-23
NL8602653A NL8602653A (nl) 1986-10-23 1986-10-23 Halfgeleiderlaser en werkwijze ter vervaardiging daarvan.

Publications (1)

Publication Number Publication Date
NL8602653A true NL8602653A (nl) 1988-05-16

Family

ID=19848701

Family Applications (1)

Application Number Title Priority Date Filing Date
NL8602653A NL8602653A (nl) 1986-10-23 1986-10-23 Halfgeleiderlaser en werkwijze ter vervaardiging daarvan.

Country Status (6)

Country Link
US (1) US4819243A (ja)
EP (1) EP0266826B1 (ja)
JP (1) JPH0828548B2 (ja)
CA (1) CA1280498C (ja)
DE (1) DE3778486D1 (ja)
NL (1) NL8602653A (ja)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0278280A (ja) * 1988-09-14 1990-03-19 Ricoh Co Ltd 半導体発光装置
US4991179A (en) * 1989-04-26 1991-02-05 At&T Bell Laboratories Electrically pumped vertical cavity laser
JPH0812616B2 (ja) * 1991-09-11 1996-02-07 インターナショナル・ビジネス・マシーンズ・コーポレイション オペレーティングシステムカーネル用受動回復方法およびシステム
US5253263A (en) * 1992-03-12 1993-10-12 Trw Inc. High-power surface-emitting semiconductor injection laser with etched internal 45 degree and 90 degree micromirrors
US5212701A (en) * 1992-03-25 1993-05-18 At&T Bell Laboratories Semiconductor surface emitting laser having enhanced optical confinement
US5244749A (en) * 1992-08-03 1993-09-14 At&T Bell Laboratories Article comprising an epitaxial multilayer mirror
US5311533A (en) * 1992-10-23 1994-05-10 Polaroid Corporation Index-guided laser array with select current paths defined by migration-enhanced dopant incorporation and dopant diffusion
US5351257A (en) * 1993-03-08 1994-09-27 Motorola, Inc. VCSEL with vertical offset operating region providing a lateral waveguide and current limiting and method of fabrication
JPH0722646A (ja) * 1993-06-30 1995-01-24 Mitsubishi Chem Corp 電流ブロック層を有するｌｅｄ
US7646797B1 (en) 2008-07-23 2010-01-12 The United States Of America As Represented By The Secretary Of The Army Use of current channeling in multiple node laser systems and methods thereof
CN113258442B (zh) * 2021-07-14 2021-11-09 华芯半导体研究院(北京)有限公司 垂直腔面发射激光器及其制备方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7901122A (nl) * 1979-02-13 1980-08-15 Philips Nv Halfgeleiderlaser en werkwijze ter vervaardiging daarvan.
US4309670A (en) * 1979-09-13 1982-01-05 Xerox Corporation Transverse light emitting electroluminescent devices
US4335461A (en) * 1980-08-25 1982-06-15 Xerox Corporation Injection lasers with lateral spatial thickness variations (LSTV) in the active layer
JPS58180080A (ja) * 1982-04-15 1983-10-21 Mitsubishi Electric Corp 半導体レ−ザ装置
JPS60100489A (ja) * 1983-08-02 1985-06-04 Furukawa Electric Co Ltd:The 半導体レ−ザ
JPS6042890A (ja) * 1983-08-18 1985-03-07 Mitsubishi Electric Corp 面発光形半導体レ−ザ及びその製造方法
US4706101A (en) * 1984-10-27 1987-11-10 Kabushiki Kaisha Toshiba Light emitting diode formed of a compound semiconductor material
US4675876A (en) * 1985-02-14 1987-06-23 Northern Telecom Limited Bragg distributed feedback surface emitting laser

Also Published As

Publication number Publication date
CA1280498C (en) 1991-02-19
US4819243A (en) 1989-04-04
JPS63111690A (ja) 1988-05-16
EP0266826B1 (en) 1992-04-22
JPH0828548B2 (ja) 1996-03-21
DE3778486D1 (de) 1992-05-27
EP0266826A1 (en) 1988-05-11

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Legal Events

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A1B A search report has been drawn up
BV The patent application has lapsed