NL8503023A - Diode en metalen stud daarvoor. - Google Patents
Diode en metalen stud daarvoor. Download PDFInfo
- Publication number
- NL8503023A NL8503023A NL8503023A NL8503023A NL8503023A NL 8503023 A NL8503023 A NL 8503023A NL 8503023 A NL8503023 A NL 8503023A NL 8503023 A NL8503023 A NL 8503023A NL 8503023 A NL8503023 A NL 8503023A
- Authority
- NL
- Netherlands
- Prior art keywords
- metal
- studs
- diode
- sintering
- tungsten
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C32/00—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ
- C22C32/001—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with only oxides
- C22C32/0015—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with only oxides with only single oxides as main non-metallic constituents
- C22C32/0031—Matrix based on refractory metals, W, Mo, Nb, Hf, Ta, Zr, Ti, V or alloys thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/492—Bases or plates or solder therefor
- H01L23/4924—Bases or plates or solder therefor characterised by the materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Powder Metallurgy (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL8503023A NL8503023A (nl) | 1985-11-05 | 1985-11-05 | Diode en metalen stud daarvoor. |
US06/839,249 US4758874A (en) | 1985-11-05 | 1986-03-13 | Diode and metal stud therefor |
KR1019860009237A KR950000206B1 (ko) | 1985-11-05 | 1986-11-03 | 다이오드와 그 금속제 스터드 |
DE8686201914T DE3677570D1 (de) | 1985-11-05 | 1986-11-03 | Diode und metallbasis dafuer. |
EP86201914A EP0223286B1 (en) | 1985-11-05 | 1986-11-03 | Diode and metal stud therefor |
JP61260825A JPH0744248B2 (ja) | 1985-11-05 | 1986-11-04 | ダイオ−ドおよびそれに用いる金属スタツド |
US06/944,292 US4748493A (en) | 1985-11-05 | 1986-12-18 | Diode and metal stud therefor |
HK157/93A HK15793A (en) | 1985-11-05 | 1993-02-25 | Diode and metal stud therefor |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL8503023 | 1985-11-05 | ||
NL8503023A NL8503023A (nl) | 1985-11-05 | 1985-11-05 | Diode en metalen stud daarvoor. |
Publications (1)
Publication Number | Publication Date |
---|---|
NL8503023A true NL8503023A (nl) | 1987-06-01 |
Family
ID=19846808
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL8503023A NL8503023A (nl) | 1985-11-05 | 1985-11-05 | Diode en metalen stud daarvoor. |
Country Status (7)
Country | Link |
---|---|
US (2) | US4758874A (ko) |
EP (1) | EP0223286B1 (ko) |
JP (1) | JPH0744248B2 (ko) |
KR (1) | KR950000206B1 (ko) |
DE (1) | DE3677570D1 (ko) |
HK (1) | HK15793A (ko) |
NL (1) | NL8503023A (ko) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE4442161C1 (de) * | 1994-11-27 | 1996-03-07 | Bayerische Metallwerke Gmbh | Verfahren zur Herstellung eines Formteils |
US5847498A (en) * | 1994-12-23 | 1998-12-08 | Philips Electronics North America Corporation | Multiple layer composite electrodes for discharge lamps |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3551992A (en) * | 1965-10-15 | 1971-01-05 | Battelle Development Corp | Method of producing ductile-tungsten base sheet alloy |
DE1533395A1 (de) * | 1966-03-11 | 1969-12-18 | Tokvo Shibaura Electric Co Ltd | Wolframstoffe mit verbesserter Biegsamkeit,Methode fuer deren Bearbeitung sowie aus diesen Stoffen hergestellte Bauteile |
GB1209969A (en) * | 1968-02-29 | 1970-10-28 | Wieland Werke Ag | Die for extruding metallic materials |
US3698055A (en) * | 1970-12-28 | 1972-10-17 | Crucible Inc | Heat resistant alloys of iron, cobalt and/or nickel and articles thereof |
US3927815A (en) * | 1971-11-22 | 1975-12-23 | Ngk Insulators Ltd | Method for producing multilayer metallized beryllia ceramics |
US3996602A (en) * | 1975-08-14 | 1976-12-07 | General Instrument Corporation | Passivated and encapsulated semiconductors and method of making same |
JPS606910B2 (ja) * | 1981-12-09 | 1985-02-21 | 日本碍子株式会社 | 金属セラミツクス接合体 |
-
1985
- 1985-11-05 NL NL8503023A patent/NL8503023A/nl not_active Application Discontinuation
-
1986
- 1986-03-13 US US06/839,249 patent/US4758874A/en not_active Expired - Lifetime
- 1986-11-03 KR KR1019860009237A patent/KR950000206B1/ko not_active IP Right Cessation
- 1986-11-03 DE DE8686201914T patent/DE3677570D1/de not_active Expired - Lifetime
- 1986-11-03 EP EP86201914A patent/EP0223286B1/en not_active Expired - Lifetime
- 1986-11-04 JP JP61260825A patent/JPH0744248B2/ja not_active Expired - Fee Related
- 1986-12-18 US US06/944,292 patent/US4748493A/en not_active Expired - Lifetime
-
1993
- 1993-02-25 HK HK157/93A patent/HK15793A/xx not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
JPS62109348A (ja) | 1987-05-20 |
EP0223286A1 (en) | 1987-05-27 |
KR950000206B1 (ko) | 1995-01-11 |
DE3677570D1 (de) | 1991-03-28 |
JPH0744248B2 (ja) | 1995-05-15 |
HK15793A (en) | 1993-03-05 |
KR870005454A (ko) | 1987-06-09 |
EP0223286B1 (en) | 1991-02-20 |
US4748493A (en) | 1988-05-31 |
US4758874A (en) | 1988-07-19 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A1B | A search report has been drawn up | ||
BV | The patent application has lapsed |