NL8500645A - Werkwijze voor het afzetten van een laag, die in hoofdzaak uit siliciumcarbide bestaat op een substraat. - Google Patents

Werkwijze voor het afzetten van een laag, die in hoofdzaak uit siliciumcarbide bestaat op een substraat. Download PDF

Info

Publication number
NL8500645A
NL8500645A NL8500645A NL8500645A NL8500645A NL 8500645 A NL8500645 A NL 8500645A NL 8500645 A NL8500645 A NL 8500645A NL 8500645 A NL8500645 A NL 8500645A NL 8500645 A NL8500645 A NL 8500645A
Authority
NL
Netherlands
Prior art keywords
substrate
sic
layer
consisting essentially
depositing
Prior art date
Application number
NL8500645A
Other languages
English (en)
Dutch (nl)
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Priority to NL8500645A priority Critical patent/NL8500645A/nl
Priority to JP61045477A priority patent/JPS61213373A/ja
Priority to EP86200336A priority patent/EP0193998B1/de
Priority to DE8686200336T priority patent/DE3664056D1/de
Priority to AT86200336T priority patent/ATE44163T1/de
Publication of NL8500645A publication Critical patent/NL8500645A/nl

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/32—Carbides
    • C23C16/325—Silicon carbide

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
NL8500645A 1985-03-07 1985-03-07 Werkwijze voor het afzetten van een laag, die in hoofdzaak uit siliciumcarbide bestaat op een substraat. NL8500645A (nl)

Priority Applications (5)

Application Number Priority Date Filing Date Title
NL8500645A NL8500645A (nl) 1985-03-07 1985-03-07 Werkwijze voor het afzetten van een laag, die in hoofdzaak uit siliciumcarbide bestaat op een substraat.
JP61045477A JPS61213373A (ja) 1985-03-07 1986-03-04 基体に実質的に炭化ケイ素からなる層を付着させる方法
EP86200336A EP0193998B1 (de) 1985-03-07 1986-03-04 Verfahren zur Abscheidung auf einem Substrat von einer, im wesentlichen aus Siliciumcarbid bestehenden Schicht
DE8686200336T DE3664056D1 (en) 1985-03-07 1986-03-04 Method of depositing on a substrate a layer which consists substantially of silicon carbide
AT86200336T ATE44163T1 (de) 1985-03-07 1986-03-04 Verfahren zur abscheidung auf einem substrat von einer, im wesentlichen aus siliciumcarbid bestehenden schicht.

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL8500645A NL8500645A (nl) 1985-03-07 1985-03-07 Werkwijze voor het afzetten van een laag, die in hoofdzaak uit siliciumcarbide bestaat op een substraat.
NL8500645 1985-03-07

Publications (1)

Publication Number Publication Date
NL8500645A true NL8500645A (nl) 1986-10-01

Family

ID=19845641

Family Applications (1)

Application Number Title Priority Date Filing Date
NL8500645A NL8500645A (nl) 1985-03-07 1985-03-07 Werkwijze voor het afzetten van een laag, die in hoofdzaak uit siliciumcarbide bestaat op een substraat.

Country Status (5)

Country Link
EP (1) EP0193998B1 (de)
JP (1) JPS61213373A (de)
AT (1) ATE44163T1 (de)
DE (1) DE3664056D1 (de)
NL (1) NL8500645A (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111261861A (zh) * 2020-01-22 2020-06-09 金雪莉 一种连续制备高纯碳硅纳米材料的方法

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6362867A (ja) * 1986-09-02 1988-03-19 Seikosha Co Ltd 有色物品
DE3640966A1 (de) * 1986-11-29 1988-06-09 Klaus Kalwar Verfahren zur herstellung einer koronaelektrode
GB8629496D0 (en) * 1986-12-10 1987-01-21 British Petroleum Co Plc Silicon carbide
US4866005A (en) * 1987-10-26 1989-09-12 North Carolina State University Sublimation of silicon carbide to produce large, device quality single crystals of silicon carbide
US4869929A (en) * 1987-11-10 1989-09-26 Air Products And Chemicals, Inc. Process for preparing sic protective films on metallic or metal impregnated substrates
DE3838905A1 (de) * 1988-11-17 1990-05-31 Knut Dipl Phys Dr Enke Kratzfester gebrauchsgegenstand, verfahren zu seiner herstellung sowie vorrichtung zur durchfuehrung dieser verfahren
DE69023478T2 (de) * 1990-03-05 1996-06-20 Ibm Verfahren zum Herstellen von Siliziumkarbidschichten mit vorherbestimmter Spannungskraft.
JPH0649645A (ja) * 1992-07-31 1994-02-22 Yoshida Kogyo Kk <Ykk> 硬質多層膜形成体およびその製造方法
US5465680A (en) * 1993-07-01 1995-11-14 Dow Corning Corporation Method of forming crystalline silicon carbide coatings
KR960012710B1 (ko) * 1993-10-11 1996-09-24 한국화학연구소 단일 유기규소 화합물을 이용한 탄화규소 막의 제조

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111261861A (zh) * 2020-01-22 2020-06-09 金雪莉 一种连续制备高纯碳硅纳米材料的方法

Also Published As

Publication number Publication date
JPS61213373A (ja) 1986-09-22
ATE44163T1 (de) 1989-07-15
JPH0559986B2 (de) 1993-09-01
DE3664056D1 (en) 1989-07-27
EP0193998B1 (de) 1989-06-21
EP0193998A1 (de) 1986-09-10

Similar Documents

Publication Publication Date Title
US5192589A (en) Low-pressure chemical vapor deposition process for depositing thin titanium nitride films having low and stable resistivity
US5139825A (en) Process for chemical vapor deposition of transition metal nitrides
US5178911A (en) Process for chemical vapor deposition of main group metal nitrides
US5866205A (en) Process for titanium nitride deposition using five- and six-coordinate titanium complexes
EP1044288B1 (de) Verfahren zur herstellung eines nitridfilms aus drei komponenten der metall und silizium enthält
EP0106817B1 (de) Schneideinsatz und Verfahren zu seiner Herstellung
US20070134433A1 (en) Methods for producing silicon nitride films and silicon oxynitride films by thermal chemical vapor deposition
JPH05230620A (ja) セラミック酸化物被覆の硬質材料焼結体
EP0234593A2 (de) Silizium enthaltende Schichten und Verfahren zu ihrer Herstellung
EP0417202A4 (en) Process for thermally depositing silicon nitride and silicon dioxide films onto a substrate
NL8500645A (nl) Werkwijze voor het afzetten van een laag, die in hoofdzaak uit siliciumcarbide bestaat op een substraat.
Fix et al. Titanium nitride thin films: properties and Apcvd synthesis using organometallic precursors
EP0723600B1 (de) Verfahren zur herstellung von siliziumkarbid-filmen unter verwendung von einzelnen siliziumorganischen verbindungen
JP4705572B2 (ja) 基板上にシリカ被膜を堆積させる方法
US6242045B1 (en) Process of preparing metal nitride films using a metal halide and an amine
US5462775A (en) Method of producing hard multilayer film formed material
GB2216547A (en) Method of forming tungsten carbide by chemical vapor deposition
WO1993015087A1 (en) Metallo-organic precursors
KR100232195B1 (ko) 씨브이디 박막의 형성을 위한 공급 가스의 합성 방법
JPS6242996B2 (de)
KR100297668B1 (ko) 금속산화물막의형성방법
Hoerner et al. Chemically vapor-deposited silicon carbide films for surface protection
JP2836927B2 (ja) ダイヤモンドの合成法およびダイヤモンド半導体の製造法
KR890002249B1 (ko) 내산화성 탄소체 및 이것의 제조방법
JPH03247506A (ja) 多結晶炭化珪素

Legal Events

Date Code Title Description
A1B A search report has been drawn up
BV The patent application has lapsed