NL8401604A - Kristalgroei-inrichting. - Google Patents

Kristalgroei-inrichting. Download PDF

Info

Publication number
NL8401604A
NL8401604A NL8401604A NL8401604A NL8401604A NL 8401604 A NL8401604 A NL 8401604A NL 8401604 A NL8401604 A NL 8401604A NL 8401604 A NL8401604 A NL 8401604A NL 8401604 A NL8401604 A NL 8401604A
Authority
NL
Netherlands
Prior art keywords
mold
receiving means
tube
hollow
mold end
Prior art date
Application number
NL8401604A
Other languages
English (en)
Dutch (nl)
Original Assignee
Mobil Solar Energy Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mobil Solar Energy Corp filed Critical Mobil Solar Energy Corp
Publication of NL8401604A publication Critical patent/NL8401604A/nl

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/34—Edge-defined film-fed crystal-growth using dies or slits
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/66—Crystals of complex geometrical shape, e.g. tubes, cylinders
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1036—Seed pulling including solid member shaping means other than seed or product [e.g., EDFG die]
    • Y10T117/104—Means for forming a hollow structure [e.g., tube, polygon]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
NL8401604A 1983-05-19 1984-05-18 Kristalgroei-inrichting. NL8401604A (nl)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/495,998 US4647437A (en) 1983-05-19 1983-05-19 Apparatus for and method of making crystalline bodies
US49599883 1983-05-19

Publications (1)

Publication Number Publication Date
NL8401604A true NL8401604A (nl) 1984-12-17

Family

ID=23970847

Family Applications (1)

Application Number Title Priority Date Filing Date
NL8401604A NL8401604A (nl) 1983-05-19 1984-05-18 Kristalgroei-inrichting.

Country Status (10)

Country Link
US (1) US4647437A (fr)
JP (1) JPS6046992A (fr)
AU (1) AU569293B2 (fr)
CA (1) CA1227999A (fr)
DE (1) DE3418370C2 (fr)
FR (1) FR2546188B1 (fr)
GB (1) GB2139917B (fr)
IL (1) IL71553A (fr)
IN (1) IN160563B (fr)
NL (1) NL8401604A (fr)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3427465A1 (de) * 1984-07-25 1986-01-30 Heliotronic Forschungs- und Entwicklungsgesellschaft für Solarzellen-Grundstoffe mbH, 8263 Burghausen Verfahren und vorrichtung zur taktweisen herstellung von siliciumformkoerpern
JPS62291977A (ja) * 1986-06-06 1987-12-18 シ−メンス、アクチエンゲゼルシヤフト 太陽電池用シリコン盤の切り出し方法と装置
US4937053A (en) * 1987-03-27 1990-06-26 Mobil Solar Energy Corporation Crystal growing apparatus
US5551977A (en) * 1994-11-14 1996-09-03 Ase Americas, Inc. Susceptor for EFG crystal growth apparatus
US5690734A (en) * 1995-03-22 1997-11-25 Ngk Insulators, Ltd. Single crystal growing method
US6139811A (en) * 1999-03-25 2000-10-31 Ase Americas, Inc. EFG crystal growth apparatus
JP4111669B2 (ja) 1999-11-30 2008-07-02 シャープ株式会社 シート製造方法、シートおよび太陽電池
JP4121697B2 (ja) * 1999-12-27 2008-07-23 シャープ株式会社 結晶シートの製造方法およびその製造装置
US6562132B2 (en) 2001-04-04 2003-05-13 Ase Americas, Inc. EFG crystal growth apparatus and method
US7344594B2 (en) * 2004-06-18 2008-03-18 Memc Electronic Materials, Inc. Melter assembly and method for charging a crystal forming apparatus with molten source material
US7465351B2 (en) * 2004-06-18 2008-12-16 Memc Electronic Materials, Inc. Melter assembly and method for charging a crystal forming apparatus with molten source material
US7691199B2 (en) * 2004-06-18 2010-04-06 Memc Electronic Materials, Inc. Melter assembly and method for charging a crystal forming apparatus with molten source material
DE102006017621B4 (de) * 2006-04-12 2008-12-24 Schott Ag Vorrichtung und Verfahren zur Herstellung von multikristallinem Silizium
AT506129B1 (de) * 2007-12-11 2009-10-15 Heic Hornbachner En Innovation Gekrümmte photovoltaik-module und verfahren zu deren herstellung
DE102010048602A1 (de) * 2010-10-15 2012-04-19 Centrotherm Sitec Gmbh Schmelztiegel für Silizium, Schmelztiegelanordnung und Trenneinheit für einen Schmelztiegel
CN103160916A (zh) * 2011-12-09 2013-06-19 洛阳金诺机械工程有限公司 一种异形硅芯的拉制模板
CN103160917A (zh) * 2011-12-09 2013-06-19 洛阳金诺机械工程有限公司 一种空心硅芯的拉制模板
CN104532341B (zh) * 2014-12-15 2017-04-05 江苏苏博瑞光电设备科技有限公司 用于蓝宝石试管生长的坩埚结构及蓝宝石试管的生长方法
JP7147213B2 (ja) 2018-03-23 2022-10-05 Tdk株式会社 Ｅｆｇ法による単結晶育成用のダイ、ｅｆｇ法による単結晶育成方法及びｅｆｇ法による単結晶

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL112257C (fr) * 1958-07-11
US3591348A (en) * 1968-01-24 1971-07-06 Tyco Laboratories Inc Method of growing crystalline materials
US3687633A (en) * 1970-08-28 1972-08-29 Tyco Laboratories Inc Apparatus for growing crystalline bodies from the melt
BE791024A (fr) * 1971-11-08 1973-05-07 Tyco Laboratories Inc Procede pour developper des cristaux a partir d'un bain d'une matiere
US4095329A (en) * 1975-12-05 1978-06-20 Mobil Tyco Soalar Energy Corporation Manufacture of semiconductor ribbon and solar cells
US4036666A (en) * 1975-12-05 1977-07-19 Mobil Tyco Solar Energy Corporation Manufacture of semiconductor ribbon
US4056404A (en) * 1976-03-29 1977-11-01 Mobil Tyco Solar Energy Corporation Flat tubular solar cells and method of producing same
US4230674A (en) * 1976-12-27 1980-10-28 Mobil Tyco Solar Energy Corporation Crucible-die assemblies for growing crystalline bodies of selected shapes
US4158038A (en) * 1977-01-24 1979-06-12 Mobil Tyco Solar Energy Corporation Method and apparatus for reducing residual stresses in crystals
US4304623A (en) * 1978-07-13 1981-12-08 International Business Machines Corporation Method for forming silicon crystalline bodies
US4353757A (en) * 1979-02-12 1982-10-12 Mobil Tyco Solar Energy Corporation Displaced capillary dies
US4440728A (en) * 1981-08-03 1984-04-03 Mobil Solar Energy Corporation Apparatus for growing tubular crystalline bodies
GB2139916A (en) * 1983-05-19 1984-11-21 Mobil Solar Energy Corp EFG Apparatus

Also Published As

Publication number Publication date
DE3418370A1 (de) 1984-11-22
IL71553A (en) 1988-05-31
JPH0454640B2 (fr) 1992-08-31
GB2139917A (en) 1984-11-21
FR2546188A1 (fr) 1984-11-23
US4647437A (en) 1987-03-03
JPS6046992A (ja) 1985-03-14
IN160563B (fr) 1987-07-18
CA1227999A (fr) 1987-10-13
DE3418370C2 (de) 1994-02-10
FR2546188B1 (fr) 1991-07-05
GB2139917B (en) 1987-02-11
IL71553A0 (en) 1984-07-31
AU2769284A (en) 1984-11-22
AU569293B2 (en) 1988-01-28

Similar Documents

Publication Publication Date Title
NL8401604A (nl) Kristalgroei-inrichting.
US4230674A (en) Crucible-die assemblies for growing crystalline bodies of selected shapes
KR960013579B1 (ko) Efg 결정성장장치용 습식 팁다이
US4711695A (en) Apparatus for and method of making crystalline bodies
CA1172146A (fr) Methode et appareil de filage de filaments monocristallins
US5114528A (en) Edge-defined contact heater apparatus and method for floating zone crystal growth
US4028059A (en) Multiple dies for ribbon
NL8401600A (nl) Kristalgroei-inrichting.
US4461671A (en) Process for the manufacture of semiconductor wafers
JPS63144187A (ja) シリコンのデンドライトウェッブ結晶を成長させる方法及び装置
JP3775776B2 (ja) 単結晶の製造方法
JPS5973492A (ja) 帯状シリコン結晶の製造装置
CA1116985A (fr) Matrice capillaire
CA1165212A (fr) Creuset
JPS6111916B2 (fr)
GB2091122A (en) Die for crystal pulling
CN102869806B (zh) 用于接纳半导体材料层的碳带
JP3018429B2 (ja) 単結晶の製造方法および製造装置
Kou Edge-defined contact heater apparatus and method for floating zone crystal growth
JP3127500B2 (ja) 単結晶育成用アンプルの構成方法
JPS6038360B2 (ja) 結晶成長用のダイ組立体
JPH0699228B2 (ja) 単結晶の引上方法
HU205396B (en) Process and equipment for growing laminar monocrystals
JPS5992909A (ja) 平板状多結晶シリコンの製造方法
JPS60195082A (ja) 半導体結晶の製造装置

Legal Events

Date Code Title Description
A85 Still pending on 85-01-01
BA A request for search or an international-type search has been filed
BB A search report has been drawn up
BC A request for examination has been filed
BV The patent application has lapsed