IL71553A - Apparatus for and method of making crystalline bodies - Google Patents
Apparatus for and method of making crystalline bodiesInfo
- Publication number
- IL71553A IL71553A IL71553A IL7155384A IL71553A IL 71553 A IL71553 A IL 71553A IL 71553 A IL71553 A IL 71553A IL 7155384 A IL7155384 A IL 7155384A IL 71553 A IL71553 A IL 71553A
- Authority
- IL
- Israel
- Prior art keywords
- making crystalline
- crystalline bodies
- bodies
- making
- crystalline
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/34—Edge-defined film-fed crystal-growth using dies or slits
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
- C30B29/66—Crystals of complex geometrical shape, e.g. tubes, cylinders
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1036—Seed pulling including solid member shaping means other than seed or product [e.g., EDFG die]
- Y10T117/104—Means for forming a hollow structure [e.g., tube, polygon]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Geometry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/495,998 US4647437A (en) | 1983-05-19 | 1983-05-19 | Apparatus for and method of making crystalline bodies |
Publications (2)
Publication Number | Publication Date |
---|---|
IL71553A0 IL71553A0 (en) | 1984-07-31 |
IL71553A true IL71553A (en) | 1988-05-31 |
Family
ID=23970847
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IL71553A IL71553A (en) | 1983-05-19 | 1984-04-15 | Apparatus for and method of making crystalline bodies |
Country Status (10)
Country | Link |
---|---|
US (1) | US4647437A (fr) |
JP (1) | JPS6046992A (fr) |
AU (1) | AU569293B2 (fr) |
CA (1) | CA1227999A (fr) |
DE (1) | DE3418370C2 (fr) |
FR (1) | FR2546188B1 (fr) |
GB (1) | GB2139917B (fr) |
IL (1) | IL71553A (fr) |
IN (1) | IN160563B (fr) |
NL (1) | NL8401604A (fr) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3427465A1 (de) * | 1984-07-25 | 1986-01-30 | Heliotronic Forschungs- und Entwicklungsgesellschaft für Solarzellen-Grundstoffe mbH, 8263 Burghausen | Verfahren und vorrichtung zur taktweisen herstellung von siliciumformkoerpern |
JPS62291977A (ja) * | 1986-06-06 | 1987-12-18 | シ−メンス、アクチエンゲゼルシヤフト | 太陽電池用シリコン盤の切り出し方法と装置 |
US4937053A (en) * | 1987-03-27 | 1990-06-26 | Mobil Solar Energy Corporation | Crystal growing apparatus |
US5551977A (en) * | 1994-11-14 | 1996-09-03 | Ase Americas, Inc. | Susceptor for EFG crystal growth apparatus |
US5690734A (en) * | 1995-03-22 | 1997-11-25 | Ngk Insulators, Ltd. | Single crystal growing method |
US6139811A (en) * | 1999-03-25 | 2000-10-31 | Ase Americas, Inc. | EFG crystal growth apparatus |
JP4111669B2 (ja) | 1999-11-30 | 2008-07-02 | シャープ株式会社 | シート製造方法、シートおよび太陽電池 |
JP4121697B2 (ja) * | 1999-12-27 | 2008-07-23 | シャープ株式会社 | 結晶シートの製造方法およびその製造装置 |
US6562132B2 (en) | 2001-04-04 | 2003-05-13 | Ase Americas, Inc. | EFG crystal growth apparatus and method |
US7465351B2 (en) * | 2004-06-18 | 2008-12-16 | Memc Electronic Materials, Inc. | Melter assembly and method for charging a crystal forming apparatus with molten source material |
US7691199B2 (en) * | 2004-06-18 | 2010-04-06 | Memc Electronic Materials, Inc. | Melter assembly and method for charging a crystal forming apparatus with molten source material |
US7344594B2 (en) * | 2004-06-18 | 2008-03-18 | Memc Electronic Materials, Inc. | Melter assembly and method for charging a crystal forming apparatus with molten source material |
DE102006017621B4 (de) * | 2006-04-12 | 2008-12-24 | Schott Ag | Vorrichtung und Verfahren zur Herstellung von multikristallinem Silizium |
AT506129B1 (de) * | 2007-12-11 | 2009-10-15 | Heic Hornbachner En Innovation | Gekrümmte photovoltaik-module und verfahren zu deren herstellung |
DE102010048602A1 (de) * | 2010-10-15 | 2012-04-19 | Centrotherm Sitec Gmbh | Schmelztiegel für Silizium, Schmelztiegelanordnung und Trenneinheit für einen Schmelztiegel |
CN103160917A (zh) * | 2011-12-09 | 2013-06-19 | 洛阳金诺机械工程有限公司 | 一种空心硅芯的拉制模板 |
CN103160916A (zh) * | 2011-12-09 | 2013-06-19 | 洛阳金诺机械工程有限公司 | 一种异形硅芯的拉制模板 |
CN104532341B (zh) * | 2014-12-15 | 2017-04-05 | 江苏苏博瑞光电设备科技有限公司 | 用于蓝宝石试管生长的坩埚结构及蓝宝石试管的生长方法 |
JP7147213B2 (ja) * | 2018-03-23 | 2022-10-05 | Tdk株式会社 | Efg法による単結晶育成用のダイ、efg法による単結晶育成方法及びefg法による単結晶 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL112257C (fr) * | 1958-07-11 | |||
US3591348A (en) * | 1968-01-24 | 1971-07-06 | Tyco Laboratories Inc | Method of growing crystalline materials |
US3687633A (en) * | 1970-08-28 | 1972-08-29 | Tyco Laboratories Inc | Apparatus for growing crystalline bodies from the melt |
BE791024A (fr) * | 1971-11-08 | 1973-05-07 | Tyco Laboratories Inc | Procede pour developper des cristaux a partir d'un bain d'une matiere |
US4036666A (en) * | 1975-12-05 | 1977-07-19 | Mobil Tyco Solar Energy Corporation | Manufacture of semiconductor ribbon |
US4095329A (en) * | 1975-12-05 | 1978-06-20 | Mobil Tyco Soalar Energy Corporation | Manufacture of semiconductor ribbon and solar cells |
US4056404A (en) * | 1976-03-29 | 1977-11-01 | Mobil Tyco Solar Energy Corporation | Flat tubular solar cells and method of producing same |
US4230674A (en) * | 1976-12-27 | 1980-10-28 | Mobil Tyco Solar Energy Corporation | Crucible-die assemblies for growing crystalline bodies of selected shapes |
US4158038A (en) * | 1977-01-24 | 1979-06-12 | Mobil Tyco Solar Energy Corporation | Method and apparatus for reducing residual stresses in crystals |
US4304623A (en) * | 1978-07-13 | 1981-12-08 | International Business Machines Corporation | Method for forming silicon crystalline bodies |
US4353757A (en) * | 1979-02-12 | 1982-10-12 | Mobil Tyco Solar Energy Corporation | Displaced capillary dies |
US4440728A (en) * | 1981-08-03 | 1984-04-03 | Mobil Solar Energy Corporation | Apparatus for growing tubular crystalline bodies |
GB2139916A (en) * | 1983-05-19 | 1984-11-21 | Mobil Solar Energy Corp | EFG Apparatus |
-
1983
- 1983-05-19 US US06/495,998 patent/US4647437A/en not_active Expired - Fee Related
-
1984
- 1984-04-10 CA CA000451674A patent/CA1227999A/fr not_active Expired
- 1984-04-12 GB GB08409489A patent/GB2139917B/en not_active Expired
- 1984-04-15 IL IL71553A patent/IL71553A/xx not_active IP Right Cessation
- 1984-04-17 IN IN330/DEL/84A patent/IN160563B/en unknown
- 1984-05-04 AU AU27692/84A patent/AU569293B2/en not_active Ceased
- 1984-05-14 FR FR848407423A patent/FR2546188B1/fr not_active Expired - Lifetime
- 1984-05-17 DE DE3418370A patent/DE3418370C2/de not_active Expired - Fee Related
- 1984-05-18 JP JP59098896A patent/JPS6046992A/ja active Granted
- 1984-05-18 NL NL8401604A patent/NL8401604A/nl not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
FR2546188A1 (fr) | 1984-11-23 |
JPS6046992A (ja) | 1985-03-14 |
GB2139917B (en) | 1987-02-11 |
NL8401604A (nl) | 1984-12-17 |
DE3418370A1 (de) | 1984-11-22 |
CA1227999A (fr) | 1987-10-13 |
AU569293B2 (en) | 1988-01-28 |
AU2769284A (en) | 1984-11-22 |
IL71553A0 (en) | 1984-07-31 |
FR2546188B1 (fr) | 1991-07-05 |
IN160563B (fr) | 1987-07-18 |
GB2139917A (en) | 1984-11-21 |
US4647437A (en) | 1987-03-03 |
JPH0454640B2 (fr) | 1992-08-31 |
DE3418370C2 (de) | 1994-02-10 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
HC | Change of name of proprietor(s) | ||
RH | Patent void |