NL8303976A - Werkwijze voor de vervaardiging van een halfgeleider-fotokathode. - Google Patents
Werkwijze voor de vervaardiging van een halfgeleider-fotokathode. Download PDFInfo
- Publication number
- NL8303976A NL8303976A NL8303976A NL8303976A NL8303976A NL 8303976 A NL8303976 A NL 8303976A NL 8303976 A NL8303976 A NL 8303976A NL 8303976 A NL8303976 A NL 8303976A NL 8303976 A NL8303976 A NL 8303976A
- Authority
- NL
- Netherlands
- Prior art keywords
- temperature
- semiconductor
- layer
- glass
- protective layer
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims description 46
- 238000000034 method Methods 0.000 title claims description 14
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 239000010410 layer Substances 0.000 claims description 31
- 239000011521 glass Substances 0.000 claims description 28
- 239000011241 protective layer Substances 0.000 claims description 13
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 6
- 229910045601 alloy Inorganic materials 0.000 claims description 5
- 239000000956 alloy Substances 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 5
- 239000002344 surface layer Substances 0.000 claims description 5
- 238000005496 tempering Methods 0.000 claims description 3
- 239000000758 substrate Substances 0.000 description 6
- 229910052792 caesium Inorganic materials 0.000 description 3
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 description 3
- 238000004017 vitrification Methods 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- 230000004927 fusion Effects 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000003746 solid phase reaction Methods 0.000 description 1
- 238000010671 solid-state reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
- H01J9/12—Manufacture of electrodes or electrode systems of photo-emissive cathodes; of secondary-emission electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/34—Photo-emissive cathodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2201/00—Electrodes common to discharge tubes
- H01J2201/34—Photoemissive electrodes
- H01J2201/342—Cathodes
- H01J2201/3421—Composition of the emitting surface
- H01J2201/3423—Semiconductors, e.g. GaAs, NEA emitters
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Joining Of Glass To Other Materials (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE3242737 | 1982-11-19 | ||
| DE19823242737 DE3242737A1 (de) | 1982-11-19 | 1982-11-19 | Verfahren zum herstellen einer halbleiter-photokathode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL8303976A true NL8303976A (nl) | 1984-06-18 |
Family
ID=6178466
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL8303976A NL8303976A (nl) | 1982-11-19 | 1983-11-18 | Werkwijze voor de vervaardiging van een halfgeleider-fotokathode. |
Country Status (3)
| Country | Link |
|---|---|
| DE (1) | DE3242737A1 (enExample) |
| GB (1) | GB2130434B (enExample) |
| NL (1) | NL8303976A (enExample) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| RU2670498C1 (ru) * | 2017-10-16 | 2018-10-23 | Общество с ограниченной ответственностью "Катод" | Устройство для изготовления заготовки фотокатода фотоэлектронного прибора термокомпрессионным соединением полупроводниковой пластины со стеклянной заготовкой |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3769536A (en) * | 1972-01-28 | 1973-10-30 | Varian Associates | Iii-v photocathode bonded to a foreign transparent substrate |
| FR2300413A1 (fr) * | 1975-02-04 | 1976-09-03 | Labo Electronique Physique | Fenetre |
| FR2326031A1 (fr) * | 1975-09-26 | 1977-04-22 | Thomson Csf | Photocathode en couches minces, utilisee en transmission, et tube electronique comportant une telle photocathode |
| DE2842492C2 (de) * | 1978-09-29 | 1986-04-17 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Verfahren zur Herstellung einer aus einem Halbleiter-Glas-Verbundwerkstoff bestehenden Photokathode |
| DE2909956A1 (de) * | 1979-03-14 | 1980-09-18 | Licentia Gmbh | Halbleiter-glas-verbundwerkstoff |
| DE2909985C3 (de) * | 1979-03-14 | 1981-10-22 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Verfahren zur Herstellung eines Halbleiter-Glas-Verbundwerkstoffs und Verwendung eines solchen Verbundwerkstoffes |
-
1982
- 1982-11-19 DE DE19823242737 patent/DE3242737A1/de active Granted
-
1983
- 1983-11-18 NL NL8303976A patent/NL8303976A/nl not_active Application Discontinuation
- 1983-11-18 GB GB08330807A patent/GB2130434B/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| DE3242737A1 (de) | 1984-05-24 |
| GB2130434A (en) | 1984-05-31 |
| GB2130434B (en) | 1986-05-29 |
| GB8330807D0 (en) | 1983-12-29 |
| DE3242737C2 (enExample) | 1990-12-13 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A85 | Still pending on 85-01-01 | ||
| BV | The patent application has lapsed |