NL8300631A - Inrichting voor het opwekken van coherente straling. - Google Patents

Inrichting voor het opwekken van coherente straling. Download PDF

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Publication number
NL8300631A
NL8300631A NL8300631A NL8300631A NL8300631A NL 8300631 A NL8300631 A NL 8300631A NL 8300631 A NL8300631 A NL 8300631A NL 8300631 A NL8300631 A NL 8300631A NL 8300631 A NL8300631 A NL 8300631A
Authority
NL
Netherlands
Prior art keywords
semiconductor
layer
junction
cathode
breakdown voltage
Prior art date
Application number
NL8300631A
Other languages
English (en)
Dutch (nl)
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Priority to NL8300631A priority Critical patent/NL8300631A/nl
Priority to US06/576,974 priority patent/US4631731A/en
Priority to CA000447568A priority patent/CA1257676A/fr
Priority to AT84200222T priority patent/ATE29345T1/de
Priority to EP84200222A priority patent/EP0119646B1/fr
Priority to DE8484200222T priority patent/DE3465843D1/de
Priority to AU24738/84A priority patent/AU571488B2/en
Priority to JP59029663A priority patent/JPS59161891A/ja
Publication of NL8300631A publication Critical patent/NL8300631A/nl

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/308—Semiconductor cathodes, e.g. cathodes with PN junction layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09—Processes or apparatus for excitation, e.g. pumping
    • H01S3/0955—Processes or apparatus for excitation, e.g. pumping using pumping by high energy particles
    • H01S3/0959—Processes or apparatus for excitation, e.g. pumping using pumping by high energy particles by an electron beam

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Glass Compositions (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
NL8300631A 1983-02-21 1983-02-21 Inrichting voor het opwekken van coherente straling. NL8300631A (nl)

Priority Applications (8)

Application Number Priority Date Filing Date Title
NL8300631A NL8300631A (nl) 1983-02-21 1983-02-21 Inrichting voor het opwekken van coherente straling.
US06/576,974 US4631731A (en) 1983-02-21 1984-02-03 Device for producing or amplifying coherent radiation
CA000447568A CA1257676A (fr) 1983-02-21 1984-02-16 Dispositif pour produire un rayonnement coherent
AT84200222T ATE29345T1 (de) 1983-02-21 1984-02-20 Vorrichtung zur erzeugung von kohaerenter strahlung.
EP84200222A EP0119646B1 (fr) 1983-02-21 1984-02-20 Dispositif pour générer une radiation cohérente
DE8484200222T DE3465843D1 (en) 1983-02-21 1984-02-20 Device for producing coherent radiation
AU24738/84A AU571488B2 (en) 1983-02-21 1984-02-20 Semiconductor laser
JP59029663A JPS59161891A (ja) 1983-02-21 1984-02-21 可干渉性放射線発生装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL8300631 1983-02-21
NL8300631A NL8300631A (nl) 1983-02-21 1983-02-21 Inrichting voor het opwekken van coherente straling.

Publications (1)

Publication Number Publication Date
NL8300631A true NL8300631A (nl) 1984-09-17

Family

ID=19841445

Family Applications (1)

Application Number Title Priority Date Filing Date
NL8300631A NL8300631A (nl) 1983-02-21 1983-02-21 Inrichting voor het opwekken van coherente straling.

Country Status (8)

Country Link
US (1) US4631731A (fr)
EP (1) EP0119646B1 (fr)
JP (1) JPS59161891A (fr)
AT (1) ATE29345T1 (fr)
AU (1) AU571488B2 (fr)
CA (1) CA1257676A (fr)
DE (1) DE3465843D1 (fr)
NL (1) NL8300631A (fr)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL8400632A (nl) * 1984-02-29 1985-09-16 Philips Nv Inrichting voor het opwekken van elektromagnetische straling.
DE3538175C2 (de) * 1984-11-21 1996-06-05 Philips Electronics Nv Halbleiteranordnung zum Erzeugen eines Elektronenstromes und ihre Verwendung
NL8701497A (nl) * 1987-06-26 1989-01-16 Philips Nv Halfgeleiderinrichting voor het opwekken van electromagnetische straling.
US4894832A (en) * 1988-09-15 1990-01-16 North American Philips Corporation Wide band gap semiconductor light emitting devices
JP2548352B2 (ja) * 1989-01-17 1996-10-30 松下電器産業株式会社 発光素子およびその製造方法
FR2661566B1 (fr) * 1990-04-25 1995-03-31 Commissariat Energie Atomique Laser compact a semi-conducteur du type a pompage electronique.
FR2690005B1 (fr) * 1992-04-10 1994-05-20 Commissariat A Energie Atomique Canon a electrons compact comportant une source d'electrons a micropointes et laser a semi-conducteur utilisant ce canon pour le pompage electronique.
JPH06104533A (ja) * 1992-09-22 1994-04-15 Matsushita Electric Ind Co Ltd 青色発光素子およびその製造方法
US5513198A (en) * 1993-07-14 1996-04-30 Corning Incorporated Packaging of high power semiconductor lasers

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3393373A (en) * 1963-07-11 1968-07-16 Stimler Morton Electron stimulated optical maser
US3655986A (en) * 1964-10-20 1972-04-11 Massachusetts Inst Technology Laser device
US3575627A (en) * 1967-12-29 1971-04-20 Rca Corp Cathode-ray tube with screen comprising laser crystals
US3715162A (en) * 1971-04-19 1973-02-06 Minnesota Mining & Mfg Free exciton indirect transition laser
JPS4862392A (fr) * 1971-12-06 1973-08-31
US3821773A (en) * 1972-01-24 1974-06-28 Beta Ind Inc Solid state emitting device and method of producing the same
JPS5110074A (ja) * 1974-07-10 1976-01-27 Iichiro Matsumoto Kokuruiseifunho
US3942132A (en) * 1974-09-06 1976-03-02 The United States Of America As Represented By The Secretary Of The Army Combined electron beam semiconductor modulator and junction laser
NL7901122A (nl) * 1979-02-13 1980-08-15 Philips Nv Halfgeleiderlaser en werkwijze ter vervaardiging daarvan.
NL184589C (nl) * 1979-07-13 1989-09-01 Philips Nv Halfgeleiderinrichting voor het opwekken van een elektronenbundel en werkwijze voor het vervaardigen van een dergelijke halfgeleiderinrichting.

Also Published As

Publication number Publication date
JPS59161891A (ja) 1984-09-12
US4631731A (en) 1986-12-23
AU571488B2 (en) 1988-04-21
CA1257676A (fr) 1989-07-18
EP0119646B1 (fr) 1987-09-02
DE3465843D1 (en) 1987-10-08
ATE29345T1 (de) 1987-09-15
AU2473884A (en) 1984-08-30
EP0119646A1 (fr) 1984-09-26

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Legal Events

Date Code Title Description
A1B A search report has been drawn up
A85 Still pending on 85-01-01
BV The patent application has lapsed