NL8103649A - Halfgeleiderinrichting en werkwijze voor het vervaardigen van de halfgeleiderinrichting. - Google Patents

Halfgeleiderinrichting en werkwijze voor het vervaardigen van de halfgeleiderinrichting. Download PDF

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Publication number
NL8103649A
NL8103649A NL8103649A NL8103649A NL8103649A NL 8103649 A NL8103649 A NL 8103649A NL 8103649 A NL8103649 A NL 8103649A NL 8103649 A NL8103649 A NL 8103649A NL 8103649 A NL8103649 A NL 8103649A
Authority
NL
Netherlands
Prior art keywords
polycrystalline silicon
semiconductor device
carbon
silicon
layer
Prior art date
Application number
NL8103649A
Other languages
English (en)
Dutch (nl)
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Priority to NL8103649A priority Critical patent/NL8103649A/nl
Priority to DE8282200965T priority patent/DE3277483D1/de
Priority to EP82200965A priority patent/EP0073075B1/en
Priority to CA000408391A priority patent/CA1217116A/en
Priority to AU86601/82A priority patent/AU552505B2/en
Priority to JP57135063A priority patent/JPS5832471A/ja
Publication of NL8103649A publication Critical patent/NL8103649A/nl
Priority to US06/851,904 priority patent/US4891332A/en

Links

Classifications

    • H10D64/01306—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H01L21/28035—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02529—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H01L21/2807—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being Si or Ge or C and their alloys except Si
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/32055—Deposition of semiconductive layers, e.g. poly - or amorphous silicon layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/834—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants
    • H10D64/01314—
    • H10P14/3408—
    • H10P14/3411—
    • H10P14/3442—
    • H10P14/3444—
    • H10P14/416—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/918—Special or nonstandard dopant

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
NL8103649A 1981-08-03 1981-08-03 Halfgeleiderinrichting en werkwijze voor het vervaardigen van de halfgeleiderinrichting. NL8103649A (nl)

Priority Applications (7)

Application Number Priority Date Filing Date Title
NL8103649A NL8103649A (nl) 1981-08-03 1981-08-03 Halfgeleiderinrichting en werkwijze voor het vervaardigen van de halfgeleiderinrichting.
DE8282200965T DE3277483D1 (en) 1981-08-03 1982-07-28 Semiconductor device comprising polycrystalline silicon and method of producing the same
EP82200965A EP0073075B1 (en) 1981-08-03 1982-07-28 Semiconductor device comprising polycrystalline silicon and method of producing the same
CA000408391A CA1217116A (en) 1981-08-03 1982-07-29 Semiconductor device and method of manufacturing the semiconductor device
AU86601/82A AU552505B2 (en) 1981-08-03 1982-07-30 Semiconductor device
JP57135063A JPS5832471A (ja) 1981-08-03 1982-08-02 半導体装置の製造方法
US06/851,904 US4891332A (en) 1981-08-03 1986-04-11 Method of manufacturing a semiconductor device comprising a circuit element formed of carbon doped polycrystalline silicon

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL8103649 1981-08-03
NL8103649A NL8103649A (nl) 1981-08-03 1981-08-03 Halfgeleiderinrichting en werkwijze voor het vervaardigen van de halfgeleiderinrichting.

Publications (1)

Publication Number Publication Date
NL8103649A true NL8103649A (nl) 1983-03-01

Family

ID=19837888

Family Applications (1)

Application Number Title Priority Date Filing Date
NL8103649A NL8103649A (nl) 1981-08-03 1981-08-03 Halfgeleiderinrichting en werkwijze voor het vervaardigen van de halfgeleiderinrichting.

Country Status (7)

Country Link
US (1) US4891332A (OSRAM)
EP (1) EP0073075B1 (OSRAM)
JP (1) JPS5832471A (OSRAM)
AU (1) AU552505B2 (OSRAM)
CA (1) CA1217116A (OSRAM)
DE (1) DE3277483D1 (OSRAM)
NL (1) NL8103649A (OSRAM)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3682021D1 (de) * 1985-10-23 1991-11-21 Hitachi Ltd Polysilizium-mos-transistor und verfahren zu seiner herstellung.
US5037766A (en) * 1988-12-06 1991-08-06 Industrial Technology Research Institute Method of fabricating a thin film polysilicon thin film transistor or resistor
GB8908509D0 (en) * 1989-04-14 1989-06-01 Secr Defence Substitutional carbon in silicon
US5360986A (en) * 1993-10-05 1994-11-01 Motorola, Inc. Carbon doped silicon semiconductor device having a narrowed bandgap characteristic and method
DE19652417A1 (de) * 1996-12-09 1998-06-10 Inst Halbleiterphysik Gmbh MOSFET und Verfahren zur Herstellung der Schichten für einen derartigen Transistor
US5885861A (en) * 1997-05-30 1999-03-23 Advanced Micro Devices, Inc. Reduction of dopant diffusion by the co-implantation of impurities into the transistor gate conductor
US6258067B1 (en) * 1998-12-08 2001-07-10 Smith & Nephew, Inc. Middle ear fluid aspirator
US6576535B2 (en) 2001-04-11 2003-06-10 Texas Instruments Incorporated Carbon doped epitaxial layer for high speed CB-CMOS
US6774019B2 (en) * 2002-05-17 2004-08-10 International Business Machines Corporation Incorporation of an impurity into a thin film
CA2419216C (en) 2003-02-19 2005-03-01 Jan Nyquist Method and apparatus for joining plastic pipe
US7736968B2 (en) * 2008-10-27 2010-06-15 Taiwan Semiconductor Manufacturing Company, Ltd. Reducing poly-depletion through co-implanting carbon and nitrogen
US20120043600A1 (en) * 2010-08-18 2012-02-23 Van Der Vegt Henderikus Albert Floating-Gate Device and Method Therefor

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE666629A (OSRAM) * 1964-08-04
US3497773A (en) * 1967-02-20 1970-02-24 Westinghouse Electric Corp Passive circuit elements
CH474863A (de) * 1968-06-20 1969-06-30 Centre Electron Horloger Verfahren zur Herstellung eines Zwischenproduktes für integrierte Schaltungen
US3750268A (en) * 1971-09-10 1973-08-07 Motorola Inc Poly-silicon electrodes for c-igfets
FR2257998B1 (OSRAM) * 1974-01-10 1976-11-26 Commissariat Energie Atomique
DE2508802A1 (de) * 1975-02-28 1976-09-09 Siemens Ag Verfahren zum abscheiden von elementarem silicium
US4189826A (en) * 1977-03-07 1980-02-26 Eastman Kodak Company Silicon charge-handling device employing SiC electrodes
DE2836911C2 (de) * 1978-08-23 1986-11-06 Siemens AG, 1000 Berlin und 8000 München Passivierungsschicht für Halbleiterbauelemente
US4329699A (en) * 1979-03-26 1982-05-11 Matsushita Electric Industrial Co., Ltd. Semiconductor device and method of manufacturing the same
JPS5691458A (en) * 1979-12-26 1981-07-24 Fujitsu Ltd Manufacturing of high-resistance element
JPS5693375A (en) * 1979-12-26 1981-07-28 Shunpei Yamazaki Photoelectric conversion device
FR2485810A1 (fr) * 1980-06-24 1981-12-31 Thomson Csf Procede de realisation d'une couche contenant du silicium et dispositif de conversion photo-electrique mettant en oeuvre ce procede
US4439463A (en) * 1982-02-18 1984-03-27 Atlantic Richfield Company Plasma assisted deposition system
JPS58171832A (ja) * 1982-03-31 1983-10-08 Toshiba Corp 半導体装置の製造方法

Also Published As

Publication number Publication date
CA1217116A (en) 1987-01-27
AU8660182A (en) 1983-02-10
EP0073075A3 (en) 1984-08-22
JPH0139227B2 (OSRAM) 1989-08-18
US4891332A (en) 1990-01-02
EP0073075A2 (en) 1983-03-02
JPS5832471A (ja) 1983-02-25
AU552505B2 (en) 1986-06-05
EP0073075B1 (en) 1987-10-14
DE3277483D1 (en) 1987-11-19

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Legal Events

Date Code Title Description
A1B A search report has been drawn up
A85 Still pending on 85-01-01
BV The patent application has lapsed