NL8101409A - Halfgeleiderlaser met tenminste twee stralingsbundels, en werkwijze ter vervaardiging daarvan. - Google Patents
Halfgeleiderlaser met tenminste twee stralingsbundels, en werkwijze ter vervaardiging daarvan. Download PDFInfo
- Publication number
- NL8101409A NL8101409A NL8101409A NL8101409A NL8101409A NL 8101409 A NL8101409 A NL 8101409A NL 8101409 A NL8101409 A NL 8101409A NL 8101409 A NL8101409 A NL 8101409A NL 8101409 A NL8101409 A NL 8101409A
- Authority
- NL
- Netherlands
- Prior art keywords
- layer
- conductivity type
- region
- passive layer
- active layer
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims description 73
- 230000005855 radiation Effects 0.000 title claims description 22
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 239000000758 substrate Substances 0.000 claims description 30
- 238000009792 diffusion process Methods 0.000 claims description 15
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 12
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 10
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 9
- 229910052725 zinc Inorganic materials 0.000 claims description 9
- 239000011701 zinc Substances 0.000 claims description 9
- MDPILPRLPQYEEN-UHFFFAOYSA-N aluminium arsenide Chemical compound [As]#[Al] MDPILPRLPQYEEN-UHFFFAOYSA-N 0.000 claims description 5
- 230000000873 masking effect Effects 0.000 claims description 4
- 230000007704 transition Effects 0.000 claims description 4
- 230000005540 biological transmission Effects 0.000 claims description 3
- 239000002019 doping agent Substances 0.000 claims description 3
- 230000001747 exhibiting effect Effects 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 147
- 230000003287 optical effect Effects 0.000 description 10
- 239000013307 optical fiber Substances 0.000 description 10
- 238000001816 cooling Methods 0.000 description 7
- 238000005530 etching Methods 0.000 description 7
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 7
- 229910052737 gold Inorganic materials 0.000 description 7
- 239000010931 gold Substances 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- 238000002156 mixing Methods 0.000 description 4
- 238000004891 communication Methods 0.000 description 3
- 238000010276 construction Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 239000000835 fiber Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- MBGCACIOPCILDG-UHFFFAOYSA-N [Ni].[Ge].[Au] Chemical compound [Ni].[Ge].[Au] MBGCACIOPCILDG-UHFFFAOYSA-N 0.000 description 1
- 239000012190 activator Substances 0.000 description 1
- 201000009310 astigmatism Diseases 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000012777 electrically insulating material Substances 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4031—Edge-emitting structures
- H01S5/4043—Edge-emitting structures with vertically stacked active layers
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL8101409A NL8101409A (nl) | 1981-03-23 | 1981-03-23 | Halfgeleiderlaser met tenminste twee stralingsbundels, en werkwijze ter vervaardiging daarvan. |
| US06/352,502 US4476563A (en) | 1981-03-23 | 1982-02-25 | Semiconductor laser having at least two radiation beams, and method of manufacturing same |
| EP82200293A EP0061220B1 (de) | 1981-03-23 | 1982-03-08 | Halbleiterlaser mit mindestens zwei Strahlenbündeln und Verfahren zu dessen Herstellung |
| DE8282200293T DE3265338D1 (en) | 1981-03-23 | 1982-03-08 | Semiconductor laser having at least two radiation beams, and method of manufacturing same |
| CA000398701A CA1173549A (en) | 1981-03-23 | 1982-03-18 | Semiconductor laser having at least two radiation beams, and method of manufacturing same |
| IE653/82A IE53373B1 (en) | 1981-03-23 | 1982-03-22 | Semiconductor laser having at least two radiation beams,and method of manufacturing same |
| JP57046139A JPS57169291A (en) | 1981-03-23 | 1982-03-23 | Semiconductor laser device and method of producing same |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL8101409 | 1981-03-23 | ||
| NL8101409A NL8101409A (nl) | 1981-03-23 | 1981-03-23 | Halfgeleiderlaser met tenminste twee stralingsbundels, en werkwijze ter vervaardiging daarvan. |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL8101409A true NL8101409A (nl) | 1982-10-18 |
Family
ID=19837208
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL8101409A NL8101409A (nl) | 1981-03-23 | 1981-03-23 | Halfgeleiderlaser met tenminste twee stralingsbundels, en werkwijze ter vervaardiging daarvan. |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US4476563A (de) |
| EP (1) | EP0061220B1 (de) |
| JP (1) | JPS57169291A (de) |
| CA (1) | CA1173549A (de) |
| DE (1) | DE3265338D1 (de) |
| IE (1) | IE53373B1 (de) |
| NL (1) | NL8101409A (de) |
Families Citing this family (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL8104068A (nl) * | 1981-09-02 | 1983-04-05 | Philips Nv | Halfgeleiderlaser. |
| NL8200414A (nl) * | 1982-02-04 | 1983-09-01 | Philips Nv | Halfgeleiderinrichting voor het opwekken van ten minste twee stralingsbundels, en werkwijze ter vervaardiging daarvan. |
| FR2525033B1 (fr) * | 1982-04-08 | 1986-01-17 | Bouadma Noureddine | Laser a semi-conducteur a plusieurs longueurs d'onde independantes et son procede de realisation |
| US4517667A (en) * | 1982-06-10 | 1985-05-14 | Xerox Corporation | Direct read after write optical disk system |
| US4603421A (en) * | 1982-11-24 | 1986-07-29 | Xerox Corporation | Incoherent composite multi-emitter laser for an optical arrangement |
| JPS59123289A (ja) * | 1982-12-28 | 1984-07-17 | Matsushita Electric Ind Co Ltd | 半導体レ−ザアレイ装置 |
| US4637122A (en) * | 1983-09-19 | 1987-01-20 | Honeywell Inc. | Integrated quantum well lasers for wavelength division multiplexing |
| JPS6167286A (ja) * | 1984-09-07 | 1986-04-07 | Sharp Corp | 半導体レ−ザアレイ素子 |
| US4605942A (en) * | 1984-10-09 | 1986-08-12 | At&T Bell Laboratories | Multiple wavelength light emitting devices |
| US4747110A (en) * | 1985-02-13 | 1988-05-24 | Matsushita Electric Industrial Co., Ltd. | Semiconductor laser device capable of emitting laser beams of different wavelengths |
| US4740978A (en) * | 1985-03-14 | 1988-04-26 | Max-Planck-Gesellschaft Zur Foerderung Der Wissenschaften E.V. | Integrated quantum well lasers having uniform thickness lasing regions for wavelength multiplexing |
| JPS61287289A (ja) * | 1985-06-14 | 1986-12-17 | Sharp Corp | 光メモリ用半導体レ−ザ装置 |
| JPS6395682A (ja) * | 1986-10-09 | 1988-04-26 | Mitsubishi Electric Corp | 端面発光素子 |
| FR2605801B1 (fr) * | 1986-10-23 | 1989-03-03 | Menigaux Louis | Procede de fabrication d'une structure semi-conductrice susceptible d'effet laser multi-longueurs d'onde, et dispositif obtenu |
| US4843031A (en) * | 1987-03-17 | 1989-06-27 | Matsushita Electric Industrial Co., Ltd. | Method of fabricating compound semiconductor laser using selective irradiation |
| JPH0620154B2 (ja) * | 1988-03-05 | 1994-03-16 | 鐘淵化学工業株式会社 | 半導体装置の製法 |
| JP2686764B2 (ja) * | 1988-03-11 | 1997-12-08 | 国際電信電話株式会社 | 光半導体素子の製造方法 |
| US5038185A (en) * | 1989-11-30 | 1991-08-06 | Xerox Corporation | Structurally consistent surface skimming hetero-transverse junction lasers and lateral heterojunction bipolar transistors |
| US5071786A (en) * | 1990-03-08 | 1991-12-10 | Xerox Corporation | Method of making multiple wavelength p-n junction semiconductor laser with separated waveguides |
| US5048040A (en) * | 1990-03-08 | 1991-09-10 | Xerox Corporation | Multiple wavelength p-n junction semiconductor laser with separated waveguides |
| FR2684237B1 (fr) * | 1991-11-22 | 1993-12-24 | Thomson Hybrides | Circuit integre de lasers semiconducteurs et procede de realisation de ce circuit. |
| JPH0696468A (ja) * | 1992-09-14 | 1994-04-08 | Canon Inc | 光記録再生装置及び半導体レーザアレイ |
| US5319655A (en) * | 1992-12-21 | 1994-06-07 | Xerox Corporation | Multiwavelength laterally-injecting-type lasers |
| JP4821829B2 (ja) * | 1998-12-22 | 2011-11-24 | ソニー株式会社 | 半導体発光装置の製造方法 |
| JP2004328011A (ja) * | 1998-12-22 | 2004-11-18 | Sony Corp | 半導体発光装置の製造方法 |
| KR100988083B1 (ko) * | 2003-06-03 | 2010-10-18 | 삼성전자주식회사 | 반도체 레이저 소자 |
| US7310358B2 (en) * | 2004-12-17 | 2007-12-18 | Palo Alto Research Center Incorporated | Semiconductor lasers |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5751276B2 (de) * | 1973-10-23 | 1982-11-01 | ||
| US4326176A (en) * | 1976-04-16 | 1982-04-20 | Hitachi, Ltd. | Semiconductor laser device |
| US4199385A (en) * | 1977-09-21 | 1980-04-22 | International Business Machines Corporation | Method of making an optically isolated monolithic light emitting diode array utilizing epitaxial deposition of graded layers and selective diffusion |
| US4185256A (en) * | 1978-01-13 | 1980-01-22 | Xerox Corporation | Mode control of heterojunction injection lasers and method of fabrication |
| JPS54107689A (en) * | 1978-02-10 | 1979-08-23 | Nec Corp | Semiconductor laser element |
| JPS55165691A (en) * | 1979-06-13 | 1980-12-24 | Nec Corp | Compound semiconductor laser element |
| US4280108A (en) * | 1979-07-12 | 1981-07-21 | Xerox Corporation | Transverse junction array laser |
-
1981
- 1981-03-23 NL NL8101409A patent/NL8101409A/nl not_active Application Discontinuation
-
1982
- 1982-02-25 US US06/352,502 patent/US4476563A/en not_active Expired - Fee Related
- 1982-03-08 DE DE8282200293T patent/DE3265338D1/de not_active Expired
- 1982-03-08 EP EP82200293A patent/EP0061220B1/de not_active Expired
- 1982-03-18 CA CA000398701A patent/CA1173549A/en not_active Expired
- 1982-03-22 IE IE653/82A patent/IE53373B1/en unknown
- 1982-03-23 JP JP57046139A patent/JPS57169291A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| CA1173549A (en) | 1984-08-28 |
| EP0061220A1 (de) | 1982-09-29 |
| JPS57169291A (en) | 1982-10-18 |
| IE820653L (en) | 1982-09-23 |
| EP0061220B1 (de) | 1985-08-14 |
| US4476563A (en) | 1984-10-09 |
| DE3265338D1 (en) | 1985-09-19 |
| IE53373B1 (en) | 1988-10-26 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A1B | A search report has been drawn up | ||
| BV | The patent application has lapsed |