NL8004912A - Licht emitterende halfgeleiderstructuur. - Google Patents
Licht emitterende halfgeleiderstructuur. Download PDFInfo
- Publication number
- NL8004912A NL8004912A NL8004912A NL8004912A NL8004912A NL 8004912 A NL8004912 A NL 8004912A NL 8004912 A NL8004912 A NL 8004912A NL 8004912 A NL8004912 A NL 8004912A NL 8004912 A NL8004912 A NL 8004912A
- Authority
- NL
- Netherlands
- Prior art keywords
- electrode
- semiconductor structure
- layer
- barrier
- structure according
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims description 70
- 230000004888 barrier function Effects 0.000 claims description 30
- 239000000463 material Substances 0.000 claims description 17
- 239000002800 charge carrier Substances 0.000 claims description 14
- 230000003287 optical effect Effects 0.000 claims description 10
- 238000010521 absorption reaction Methods 0.000 claims description 4
- 230000015556 catabolic process Effects 0.000 claims description 2
- 230000035699 permeability Effects 0.000 claims description 2
- 230000007704 transition Effects 0.000 description 9
- 230000006870 function Effects 0.000 description 8
- 238000005036 potential barrier Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 5
- 230000005670 electromagnetic radiation Effects 0.000 description 5
- 239000012212 insulator Substances 0.000 description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- 238000005215 recombination Methods 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000004091 panning Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
- H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
- H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
- H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
Landscapes
- Led Devices (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL8004912A NL8004912A (nl) | 1980-08-29 | 1980-08-29 | Licht emitterende halfgeleiderstructuur. |
| DE8181200938T DE3173251D1 (en) | 1980-08-29 | 1981-08-24 | Light emitting semiconductor structure |
| EP81200938A EP0047035B1 (en) | 1980-08-29 | 1981-08-24 | Light emitting semiconductor structure |
| IN961/CAL/81A IN154444B (enExample) | 1980-08-29 | 1981-08-27 | |
| JP13436981A JPS5776886A (en) | 1980-08-29 | 1981-08-28 | Light emitting semiconductor structure |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL8004912A NL8004912A (nl) | 1980-08-29 | 1980-08-29 | Licht emitterende halfgeleiderstructuur. |
| NL8004912 | 1980-08-29 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL8004912A true NL8004912A (nl) | 1982-04-01 |
Family
ID=19835798
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL8004912A NL8004912A (nl) | 1980-08-29 | 1980-08-29 | Licht emitterende halfgeleiderstructuur. |
Country Status (5)
| Country | Link |
|---|---|
| EP (1) | EP0047035B1 (enExample) |
| JP (1) | JPS5776886A (enExample) |
| DE (1) | DE3173251D1 (enExample) |
| IN (1) | IN154444B (enExample) |
| NL (1) | NL8004912A (enExample) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61251185A (ja) * | 1985-04-30 | 1986-11-08 | Mitsubishi Electric Corp | 半導体レ−ザと変調用電気素子の複合素子 |
| KR102642019B1 (ko) | 2016-12-30 | 2024-02-28 | 엘지디스플레이 주식회사 | 발광 소자 및 그를 포함하는 발광 장치 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS528075B2 (enExample) * | 1971-12-27 | 1977-03-07 | ||
| US3978507A (en) * | 1972-07-13 | 1976-08-31 | U.S. Philips Corporation | Electroluminescent device having localized emission |
| DE2345686A1 (de) * | 1972-09-22 | 1974-04-04 | Philips Nv | Bildwiedergabe- und/oder -umwandlungsvorrichtung |
| DE2420517A1 (de) * | 1974-04-27 | 1975-11-06 | Licentia Gmbh | Halbleiterbauelement |
| JPS5210082A (en) * | 1975-07-14 | 1977-01-26 | Mitsubishi Electric Corp | Semiconductor device |
| FR2335056A1 (fr) * | 1975-09-12 | 1977-07-08 | Thomson Csf | Dispositif de visualisation d'information donnee sous forme d'energie rayonnee |
| US4152711A (en) * | 1976-04-01 | 1979-05-01 | Mitsubishi Denki Kabuchiki Kaisha | Semiconductor controlled luminescent device |
| JPS52147087A (en) * | 1976-06-01 | 1977-12-07 | Mitsubishi Electric Corp | Semiconductor light emitting display device |
| JPS5448493A (en) * | 1977-03-23 | 1979-04-17 | Toshiba Corp | Semiconductor optical device |
-
1980
- 1980-08-29 NL NL8004912A patent/NL8004912A/nl not_active Application Discontinuation
-
1981
- 1981-08-24 DE DE8181200938T patent/DE3173251D1/de not_active Expired
- 1981-08-24 EP EP81200938A patent/EP0047035B1/en not_active Expired
- 1981-08-27 IN IN961/CAL/81A patent/IN154444B/en unknown
- 1981-08-28 JP JP13436981A patent/JPS5776886A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| EP0047035B1 (en) | 1985-12-18 |
| DE3173251D1 (en) | 1986-01-30 |
| EP0047035A3 (en) | 1982-03-17 |
| JPS5776886A (en) | 1982-05-14 |
| EP0047035A2 (en) | 1982-03-10 |
| IN154444B (enExample) | 1984-10-27 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A1B | A search report has been drawn up | ||
| BV | The patent application has lapsed |