NL7920078A - Werkwijze voor het beheersen van struktuurherstel in halfgeleiders. - Google Patents
Werkwijze voor het beheersen van struktuurherstel in halfgeleiders. Download PDFInfo
- Publication number
- NL7920078A NL7920078A NL7920078A NL7920078A NL7920078A NL 7920078 A NL7920078 A NL 7920078A NL 7920078 A NL7920078 A NL 7920078A NL 7920078 A NL7920078 A NL 7920078A NL 7920078 A NL7920078 A NL 7920078A
- Authority
- NL
- Netherlands
- Prior art keywords
- layer
- pulse
- laser
- reflectivity
- energy
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 34
- 239000004065 semiconductor Substances 0.000 title claims description 12
- 230000008439 repair process Effects 0.000 title description 7
- 238000011084 recovery Methods 0.000 claims description 27
- 238000002310 reflectometry Methods 0.000 claims description 18
- 239000010410 layer Substances 0.000 claims description 17
- 239000007787 solid Substances 0.000 claims description 11
- 230000008859 change Effects 0.000 claims description 8
- 239000002344 surface layer Substances 0.000 claims description 4
- 230000005855 radiation Effects 0.000 description 18
- 230000008569 process Effects 0.000 description 15
- 238000012360 testing method Methods 0.000 description 13
- 239000007788 liquid Substances 0.000 description 12
- 239000000356 contaminant Substances 0.000 description 11
- 230000006378 damage Effects 0.000 description 11
- 238000009792 diffusion process Methods 0.000 description 11
- 239000012535 impurity Substances 0.000 description 11
- 239000000463 material Substances 0.000 description 11
- 238000002844 melting Methods 0.000 description 11
- 230000008018 melting Effects 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 150000002500 ions Chemical class 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- 238000011109 contamination Methods 0.000 description 8
- 239000013078 crystal Substances 0.000 description 7
- 238000002474 experimental method Methods 0.000 description 6
- 238000010309 melting process Methods 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 238000005259 measurement Methods 0.000 description 5
- 229910052785 arsenic Inorganic materials 0.000 description 4
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 238000010894 electron beam technology Methods 0.000 description 4
- 238000002513 implantation Methods 0.000 description 4
- 238000001228 spectrum Methods 0.000 description 4
- 230000003247 decreasing effect Effects 0.000 description 3
- 238000006073 displacement reaction Methods 0.000 description 3
- 239000007791 liquid phase Substances 0.000 description 3
- 239000000155 melt Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007943 implant Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 238000007711 solidification Methods 0.000 description 2
- 230000008023 solidification Effects 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- 206010053567 Coagulopathies Diseases 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 230000035602 clotting Effects 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 230000007123 defense Effects 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 238000001579 optical reflectometry Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000007712 rapid solidification Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000000246 remedial effect Effects 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 230000009528 severe injury Effects 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 210000001364 upper extremity Anatomy 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02634—Homoepitaxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/09—Laser anneal
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/093—Laser beam treatment in general
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/965—Shaped junction formation
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Optics & Photonics (AREA)
- Electromagnetism (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Recrystallisation Techniques (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US05/935,665 US4155779A (en) | 1978-08-21 | 1978-08-21 | Control techniques for annealing semiconductors |
US93566578 | 1978-08-21 |
Publications (1)
Publication Number | Publication Date |
---|---|
NL7920078A true NL7920078A (nl) | 1980-06-30 |
Family
ID=25467491
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL7920078A NL7920078A (nl) | 1978-08-21 | 1979-08-14 | Werkwijze voor het beheersen van struktuurherstel in halfgeleiders. |
Country Status (7)
Country | Link |
---|---|
US (1) | US4155779A (fr) |
JP (1) | JPS55500615A (fr) |
CA (1) | CA1118114A (fr) |
FR (1) | FR2434483A1 (fr) |
GB (1) | GB2040077B (fr) |
NL (1) | NL7920078A (fr) |
WO (1) | WO1980000509A1 (fr) |
Families Citing this family (36)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4240843A (en) * | 1978-05-23 | 1980-12-23 | Western Electric Company, Inc. | Forming self-guarded p-n junctions by epitaxial regrowth of amorphous regions using selective radiation annealing |
JPS55500964A (fr) * | 1978-11-28 | 1980-11-13 | ||
US4234358A (en) * | 1979-04-05 | 1980-11-18 | Western Electric Company, Inc. | Patterned epitaxial regrowth using overlapping pulsed irradiation |
US4234356A (en) * | 1979-06-01 | 1980-11-18 | Bell Telephone Laboratories, Incorporated | Dual wavelength optical annealing of materials |
EP0171509B1 (fr) * | 1979-07-24 | 1990-10-31 | Hughes Aircraft Company | Procédé de traitement à laser pour "silicium sur saphir" |
US4242149A (en) * | 1979-07-31 | 1980-12-30 | The United States Of America As Represented By The Secretary Of The Army | Method of making photodetectors using ion implantation and laser annealing |
US4249962A (en) * | 1979-09-11 | 1981-02-10 | Western Electric Company, Inc. | Method of removing contaminating impurities from device areas in a semiconductor wafer |
JPS5640275A (en) * | 1979-09-12 | 1981-04-16 | Hitachi Ltd | Preparation of semiconductor device |
US4309225A (en) * | 1979-09-13 | 1982-01-05 | Massachusetts Institute Of Technology | Method of crystallizing amorphous material with a moving energy beam |
US4257827A (en) * | 1979-11-13 | 1981-03-24 | International Business Machines Corporation | High efficiency gettering in silicon through localized superheated melt formation |
JPS5674921A (en) * | 1979-11-22 | 1981-06-20 | Toshiba Corp | Manufacturing method of semiconductor and apparatus thereof |
US4292093A (en) * | 1979-12-28 | 1981-09-29 | The United States Of America As Represented By The United States Department Of Energy | Method using laser irradiation for the production of atomically clean crystalline silicon and germanium surfaces |
US4322253A (en) * | 1980-04-30 | 1982-03-30 | Rca Corporation | Method of making selective crystalline silicon regions containing entrapped hydrogen by laser treatment |
JPS577924A (en) * | 1980-06-18 | 1982-01-16 | Hitachi Ltd | Semiconductor device and manufacture thereof |
GB2134098B (en) * | 1982-11-10 | 1987-01-28 | Gen Electric Co Plc | Methods of manufacturing optical components |
GB2133618B (en) * | 1983-01-05 | 1986-09-10 | Gen Electric Co Plc | Fabricating semiconductor circuits |
JPS61289617A (ja) * | 1985-06-18 | 1986-12-19 | Sony Corp | 薄膜単結晶の製造装置 |
NO157876C (no) * | 1985-09-23 | 1988-06-01 | Sintef | Fremgangsmaate og apparat for gjennomfoering av varmebehandling. |
EP0268301B1 (fr) * | 1986-11-20 | 1993-09-15 | Nec Corporation | Procédé et dispositif pour tracer une ligne sur un substrat à surface structurée |
US4865683A (en) * | 1988-11-03 | 1989-09-12 | Lasa Industries, Inc. | Method and apparatus for laser process control |
US5155337A (en) * | 1989-12-21 | 1992-10-13 | North Carolina State University | Method and apparatus for controlling rapid thermal processing systems |
US5021362A (en) * | 1989-12-29 | 1991-06-04 | At&T Bell Laboratories | Laser link blowing in integrateed circuit fabrication |
US5198371A (en) * | 1990-09-24 | 1993-03-30 | Biota Corp. | Method of making silicon material with enhanced surface mobility by hydrogen ion implantation |
US5372836A (en) * | 1992-03-27 | 1994-12-13 | Tokyo Electron Limited | Method of forming polycrystalling silicon film in process of manufacturing LCD |
JPH06124913A (ja) * | 1992-06-26 | 1994-05-06 | Semiconductor Energy Lab Co Ltd | レーザー処理方法 |
KR100255689B1 (ko) * | 1993-05-27 | 2000-05-01 | 윤종용 | 반도체 레이져 소자 및 그 제조방법 |
US5441569A (en) * | 1993-11-29 | 1995-08-15 | The United States Of America As Represented By The United States Department Of Energy | Apparatus and method for laser deposition of durable coatings |
US5688550A (en) * | 1995-12-15 | 1997-11-18 | Micron Technology, Inc. | Method of forming polysilicon having a desired surface roughness |
US6177127B1 (en) | 1995-12-15 | 2001-01-23 | Micron Technology, Inc. | Method of monitoring emissivity |
GB9624715D0 (en) * | 1996-11-28 | 1997-01-15 | Philips Electronics Nv | Electronic device manufacture |
GB0001568D0 (en) * | 2000-01-24 | 2000-03-15 | Isis Innovation | Method and apparatus for measuring surface configuration |
DE10120730B4 (de) * | 2001-04-27 | 2006-08-24 | Schott Ag | Verfahren und Vorrichtung zur Messung der Phasengrenze |
US6656749B1 (en) * | 2001-12-13 | 2003-12-02 | Advanced Micro Devices, Inc. | In-situ monitoring during laser thermal annealing |
KR100541052B1 (ko) * | 2003-09-22 | 2006-01-11 | 삼성전자주식회사 | 자유 캐리어의 생성 기술을 사용하여 반도체 물질을레이저 열처리하는 공정 |
JP5279260B2 (ja) * | 2007-12-27 | 2013-09-04 | 株式会社半導体エネルギー研究所 | 半導体層の評価方法 |
JP4948629B2 (ja) * | 2010-07-20 | 2012-06-06 | ウシオ電機株式会社 | レーザリフトオフ方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3364087A (en) * | 1964-04-27 | 1968-01-16 | Varian Associates | Method of using laser to coat or etch substrate |
US3585088A (en) * | 1968-10-18 | 1971-06-15 | Ibm | Methods of producing single crystals on supporting substrates |
US3716844A (en) * | 1970-07-29 | 1973-02-13 | Ibm | Image recording on tetrahedrally coordinated amorphous films |
US4021675A (en) * | 1973-02-20 | 1977-05-03 | Hughes Aircraft Company | System for controlling ion implantation dosage in electronic materials |
DE2449688C3 (de) * | 1974-10-18 | 1980-07-10 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Verfahren zur Herstellung einer dotierten Zone eines Leitfähigkeitstyps in einem Halbleiterkörper |
US4082958A (en) * | 1975-11-28 | 1978-04-04 | Simulation Physics, Inc. | Apparatus involving pulsed electron beam processing of semiconductor devices |
-
1978
- 1978-08-21 US US05/935,665 patent/US4155779A/en not_active Expired - Lifetime
-
1979
- 1979-08-14 NL NL7920078A patent/NL7920078A/nl unknown
- 1979-08-14 JP JP50164779A patent/JPS55500615A/ja active Pending
- 1979-08-14 GB GB8009229A patent/GB2040077B/en not_active Expired
- 1979-08-14 WO PCT/US1979/000834 patent/WO1980000509A1/fr unknown
- 1979-08-16 CA CA000333912A patent/CA1118114A/fr not_active Expired
- 1979-08-21 FR FR7921071A patent/FR2434483A1/fr active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS55500615A (fr) | 1980-09-04 |
FR2434483B1 (fr) | 1983-05-13 |
GB2040077A (en) | 1980-08-20 |
WO1980000509A1 (fr) | 1980-03-20 |
CA1118114A (fr) | 1982-02-09 |
US4155779A (en) | 1979-05-22 |
GB2040077B (en) | 1983-05-18 |
FR2434483A1 (fr) | 1980-03-21 |
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