NL7806989A - Geintegreerde schakeling. - Google Patents
Geintegreerde schakeling. Download PDFInfo
- Publication number
- NL7806989A NL7806989A NL7806989A NL7806989A NL7806989A NL 7806989 A NL7806989 A NL 7806989A NL 7806989 A NL7806989 A NL 7806989A NL 7806989 A NL7806989 A NL 7806989A NL 7806989 A NL7806989 A NL 7806989A
- Authority
- NL
- Netherlands
- Prior art keywords
- transistor
- zone
- transistors
- base
- integrated circuit
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 claims description 44
- 239000004020 conductor Substances 0.000 claims description 24
- 230000007704 transition Effects 0.000 claims description 11
- 239000010410 layer Substances 0.000 description 21
- 239000000463 material Substances 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- 208000004998 Abdominal Pain Diseases 0.000 description 1
- 208000002881 Colic Diseases 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- FHUGMWWUMCDXBC-UHFFFAOYSA-N gold platinum titanium Chemical compound [Ti][Pt][Au] FHUGMWWUMCDXBC-UHFFFAOYSA-N 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
- H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
- H01L27/0233—Integrated injection logic structures [I2L]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0688—Integrated circuits having a three-dimensional layout
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
Landscapes
- Power Engineering (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Ceramic Engineering (AREA)
- Bipolar Integrated Circuits (AREA)
- Logic Circuits (AREA)
- Bipolar Transistors (AREA)
- Semiconductor Memories (AREA)
Priority Applications (8)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL7806989A NL7806989A (nl) | 1978-06-29 | 1978-06-29 | Geintegreerde schakeling. |
| CA330,315A CA1134054A (en) | 1978-06-29 | 1979-06-21 | Integrated circuit |
| GB7922121A GB2024512B (en) | 1978-06-29 | 1979-06-26 | Connections for integrated circuits |
| DE2925894A DE2925894C2 (de) | 1978-06-29 | 1979-06-27 | Integrierte Bipolartransistor-Gatterschaltungsanordnung |
| FR7916593A FR2430096A1 (fr) | 1978-06-29 | 1979-06-27 | Circuit logique integre a circuits-portes |
| JP54081530A JPS5856980B2 (ja) | 1978-06-29 | 1979-06-29 | 集積回路 |
| US06/286,233 US4380708A (en) | 1978-06-29 | 1981-07-23 | I2 L With polysilicon diodes and interconnects |
| JP57152478A JPS5848956A (ja) | 1978-06-29 | 1982-09-01 | 集積回路 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL7806989 | 1978-06-29 | ||
| NL7806989A NL7806989A (nl) | 1978-06-29 | 1978-06-29 | Geintegreerde schakeling. |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL7806989A true NL7806989A (nl) | 1980-01-03 |
Family
ID=19831145
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL7806989A NL7806989A (nl) | 1978-06-29 | 1978-06-29 | Geintegreerde schakeling. |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US4380708A (me) |
| JP (2) | JPS5856980B2 (me) |
| CA (1) | CA1134054A (me) |
| DE (1) | DE2925894C2 (me) |
| FR (1) | FR2430096A1 (me) |
| GB (1) | GB2024512B (me) |
| NL (1) | NL7806989A (me) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55134962A (en) * | 1979-04-09 | 1980-10-21 | Toshiba Corp | Semiconductor device |
| JPS56131233A (en) * | 1980-03-18 | 1981-10-14 | Hitachi Ltd | Logic circuit |
| US4622575A (en) * | 1981-10-27 | 1986-11-11 | Fairchild Semiconductor Corporation | Integrated circuit bipolar memory cell |
| GB2171249A (en) * | 1985-02-14 | 1986-08-20 | Siliconix Ltd | Improved monolithic integrated circuits |
| JPS62130553A (ja) * | 1985-12-02 | 1987-06-12 | Mitsubishi Electric Corp | 半導体集積回路装置 |
| JPS62150597A (ja) * | 1985-12-25 | 1987-07-04 | Nissan Motor Co Ltd | 昇圧回路 |
| JPH0297734U (me) * | 1989-01-19 | 1990-08-03 | ||
| JPH03257387A (ja) * | 1990-03-08 | 1991-11-15 | Matsushita Electric Ind Co Ltd | 磁気抵抗素子の駆動回路 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL7107040A (me) * | 1971-05-22 | 1972-11-24 | ||
| CH581904A5 (me) * | 1974-08-29 | 1976-11-15 | Centre Electron Horloger | |
| US4160989A (en) * | 1975-12-29 | 1979-07-10 | U.S. Philips Corporation | Integrated circuit having complementary bipolar transistors |
| US4148055A (en) * | 1975-12-29 | 1979-04-03 | U.S. Philips Corporation | Integrated circuit having complementary bipolar transistors |
| NL7612883A (nl) * | 1976-11-19 | 1978-05-23 | Philips Nv | Halfgeleiderinrichting, en werkwijze ter ver- vaardiging daarvan. |
| JPS53108776A (en) * | 1977-03-04 | 1978-09-21 | Nec Corp | Semiconductor device |
-
1978
- 1978-06-29 NL NL7806989A patent/NL7806989A/nl not_active Application Discontinuation
-
1979
- 1979-06-21 CA CA330,315A patent/CA1134054A/en not_active Expired
- 1979-06-26 GB GB7922121A patent/GB2024512B/en not_active Expired
- 1979-06-27 DE DE2925894A patent/DE2925894C2/de not_active Expired
- 1979-06-27 FR FR7916593A patent/FR2430096A1/fr active Granted
- 1979-06-29 JP JP54081530A patent/JPS5856980B2/ja not_active Expired
-
1981
- 1981-07-23 US US06/286,233 patent/US4380708A/en not_active Expired - Fee Related
-
1982
- 1982-09-01 JP JP57152478A patent/JPS5848956A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| GB2024512A (en) | 1980-01-09 |
| JPS5856980B2 (ja) | 1983-12-17 |
| FR2430096A1 (fr) | 1980-01-25 |
| DE2925894C2 (de) | 1987-03-05 |
| JPS6231832B2 (me) | 1987-07-10 |
| US4380708A (en) | 1983-04-19 |
| DE2925894A1 (de) | 1980-01-17 |
| JPS558098A (en) | 1980-01-21 |
| GB2024512B (en) | 1982-09-22 |
| JPS5848956A (ja) | 1983-03-23 |
| FR2430096B1 (me) | 1985-01-18 |
| CA1134054A (en) | 1982-10-19 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US3922565A (en) | Monolithically integrable digital basic circuit | |
| US4035664A (en) | Current hogging injection logic | |
| US4007385A (en) | Serially-connected circuit groups for intergrated injection logic | |
| US4228448A (en) | Bipolar integrated semiconductor structure including I2 L and linear type devices and fabrication methods therefor | |
| US6662344B2 (en) | Semiconductor device and method for fabricating the same | |
| US4412239A (en) | Polysilicon interconnects with pin poly diodes | |
| US3590345A (en) | Double wall pn junction isolation for monolithic integrated circuit components | |
| US3982266A (en) | Integrated injection logic having high inverse current gain | |
| NL7806989A (nl) | Geintegreerde schakeling. | |
| EP0043007B1 (en) | Saturation-limited bipolar transistor circuit structure and method of making | |
| KR930001220B1 (ko) | 반도체 집적회로 장치 및 그의 제조방법 | |
| US4288805A (en) | Integrated logic gate with NPN inverter, PNP clamp, coupling, Shottky diodes and diffused crossunder | |
| US4243896A (en) | I2 L Circuit with auxiliary transistor | |
| US5246871A (en) | Method of manufacturing a semiconductor device comprising a control circuit and a power stage with a vertical current flow, integrated in monolithic form on a single chip | |
| US4595942A (en) | Integrated circuit | |
| EP0037818B1 (en) | Current source having saturation protection | |
| US4131806A (en) | I.I.L. with injector base resistor and schottky clamp | |
| US4388636A (en) | Static memory cell and memory constructed from such cells | |
| US4446611A (en) | Method of making a saturation-limited bipolar transistor device | |
| JPS6153863B2 (me) | ||
| Hart et al. | I 2 L With polysilicon diodes and interconnects | |
| JPH0878432A (ja) | 半導体電子デバイス装置 | |
| EP0126879B1 (en) | Integrated circuit arrangement | |
| US4656498A (en) | Oxide-isolated integrated Schottky logic | |
| US4577123A (en) | Integrated logic circuit having collector node with pull-up and clamp |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A1B | A search report has been drawn up | ||
| A85 | Still pending on 85-01-01 | ||
| BV | The patent application has lapsed |