NL7704462A - Thermal oxidation of silicon semiconductor substrates - using mixture of oxygen and tri:chloroethane - Google Patents

Thermal oxidation of silicon semiconductor substrates - using mixture of oxygen and tri:chloroethane

Info

Publication number
NL7704462A
NL7704462A NL7704462A NL7704462A NL7704462A NL 7704462 A NL7704462 A NL 7704462A NL 7704462 A NL7704462 A NL 7704462A NL 7704462 A NL7704462 A NL 7704462A NL 7704462 A NL7704462 A NL 7704462A
Authority
NL
Netherlands
Prior art keywords
chloroethane
tri
oxygen
mixture
tce
Prior art date
Application number
NL7704462A
Other languages
Dutch (nl)
Original Assignee
Leuven Res & Dev Vzw
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Leuven Res & Dev Vzw filed Critical Leuven Res & Dev Vzw
Priority to NL7704462A priority Critical patent/NL7704462A/en
Publication of NL7704462A publication Critical patent/NL7704462A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
    • H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
    • H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

Prodn. of a SiO2 layer on the surface of a Si substrate is effected by heating the substrate in a gas stream contg. O2 and trichloroethane (TCE). Alternatively, the appts. in which the process is carried out is first purified by heating in a gas stream contg. O2 and TCE, the substrate is then introduced, and its surface is oxidised by heating in an O2 stream. The prod. can be used in the mfr. of semiconductor devices. TCE has the same advantages as HCl (increases the breakdown voltage of the SiO2, neutralises mobile positive ions and increases the generation life of minority charge carriers) without being toxic or corrosive.
NL7704462A 1977-04-22 1977-04-22 Thermal oxidation of silicon semiconductor substrates - using mixture of oxygen and tri:chloroethane NL7704462A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
NL7704462A NL7704462A (en) 1977-04-22 1977-04-22 Thermal oxidation of silicon semiconductor substrates - using mixture of oxygen and tri:chloroethane

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7704462A NL7704462A (en) 1977-04-22 1977-04-22 Thermal oxidation of silicon semiconductor substrates - using mixture of oxygen and tri:chloroethane

Publications (1)

Publication Number Publication Date
NL7704462A true NL7704462A (en) 1978-10-24

Family

ID=19828424

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7704462A NL7704462A (en) 1977-04-22 1977-04-22 Thermal oxidation of silicon semiconductor substrates - using mixture of oxygen and tri:chloroethane

Country Status (1)

Country Link
NL (1) NL7704462A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0405205A2 (en) * 1989-06-12 1991-01-02 Seiko Instruments Inc. Method of producing MOS type semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0405205A2 (en) * 1989-06-12 1991-01-02 Seiko Instruments Inc. Method of producing MOS type semiconductor device
EP0405205A3 (en) * 1989-06-12 1992-05-13 Seiko Instruments Inc. Method of producing mos type semiconductor device

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Legal Events

Date Code Title Description
BV The patent application has lapsed