NL7609315A - Fotogeleidend element en werkwijze voor de ver- vaardiging daarvan. - Google Patents

Fotogeleidend element en werkwijze voor de ver- vaardiging daarvan.

Info

Publication number
NL7609315A
NL7609315A NL7609315A NL7609315A NL7609315A NL 7609315 A NL7609315 A NL 7609315A NL 7609315 A NL7609315 A NL 7609315A NL 7609315 A NL7609315 A NL 7609315A NL 7609315 A NL7609315 A NL 7609315A
Authority
NL
Netherlands
Prior art keywords
photo
manufacture
guiding element
guiding
Prior art date
Application number
NL7609315A
Other languages
English (en)
Dutch (nl)
Original Assignee
Matsushita Electric Ind Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Ind Co Ltd filed Critical Matsushita Electric Ind Co Ltd
Publication of NL7609315A publication Critical patent/NL7609315A/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/20—Manufacture of screens on or from which an image or pattern is formed, picked up, converted or stored; Applying coatings to the vessel
    • H01J9/233—Manufacture of photoelectric screens or charge-storage screens
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
    • H01J29/10—Screens on or from which an image or pattern is formed, picked up, converted or stored
    • H01J29/36—Photoelectric screens; Charge-storage screens
    • H01J29/39—Charge-storage screens
    • H01J29/45—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/11—Devices sensitive to infrared, visible or ultraviolet radiation characterised by two potential barriers, e.g. bipolar phototransistors

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Light Receiving Elements (AREA)
  • Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
  • Formation Of Various Coating Films On Cathode Ray Tubes And Lamps (AREA)
NL7609315A 1975-08-20 1976-08-20 Fotogeleidend element en werkwijze voor de ver- vaardiging daarvan. NL7609315A (nl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50101400A JPS6047752B2 (ja) 1975-08-20 1975-08-20 擦像管タ−ゲット

Publications (1)

Publication Number Publication Date
NL7609315A true NL7609315A (nl) 1977-02-22

Family

ID=14299673

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7609315A NL7609315A (nl) 1975-08-20 1976-08-20 Fotogeleidend element en werkwijze voor de ver- vaardiging daarvan.

Country Status (6)

Country Link
US (1) US4068253A (fr)
JP (1) JPS6047752B2 (fr)
CA (1) CA1086547A (fr)
DE (1) DE2636992A1 (fr)
FR (1) FR2321766A1 (fr)
NL (1) NL7609315A (fr)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4266334A (en) * 1979-07-25 1981-05-12 Rca Corporation Manufacture of thinned substrate imagers
JPS56147343A (en) * 1980-04-17 1981-11-16 Matsushita Electric Ind Co Ltd Manufacture of target for image pickup tube
SU915683A1 (ru) * 1980-10-23 1985-10-23 Fizicheskoj I Im P N Lebedeva ПРЕОБРАЗОВАТЕЛЬ ОПТИЧЕСКОГО ИЗЛУЧЕНИЯ в электрический сигнал на основе структуры
JPS58184240A (ja) * 1982-04-20 1983-10-27 Matsushita Electric Ind Co Ltd 撮像管タ−ゲツト
US4689650A (en) * 1985-10-03 1987-08-25 The United States Of America As Represented By The Secretary Of The Army Infrared epitaxial detector structure and method of making same
EP0317343B1 (fr) * 1987-11-20 1995-07-05 Canon Kabushiki Kaisha Dispositif photovoltaique à jonction pin avec une couche semi-conductrice de type P ou N comprenant un matériau non monocristallin contenant Zn, Se, Te, H dans une proportion atomique de 1 à 4% et un dopant et une couche semi-conductrice de type I comprenant du Si(H,F) non monocristallin
US7014702B2 (en) * 2000-05-31 2006-03-21 Pirelli Cavi E Sistemi S.P.A. Method and apparatus for preparation of binary and higher order compounds and devices fabricated using same

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5240809B2 (fr) * 1972-04-07 1977-10-14
GB1449956A (en) * 1973-03-30 1976-09-15 Matsushita Electric Ind Co Ltd Photoconductor element
JPS5052927A (fr) * 1973-09-10 1975-05-10
JPS5419127B2 (fr) * 1974-06-21 1979-07-12

Also Published As

Publication number Publication date
CA1086547A (fr) 1980-09-30
FR2321766A1 (fr) 1977-03-18
US4068253A (en) 1978-01-10
FR2321766B1 (fr) 1979-07-20
DE2636992A1 (de) 1977-02-24
JPS5224483A (en) 1977-02-23
JPS6047752B2 (ja) 1985-10-23
AU1654176A (en) 1978-02-09

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Legal Events

Date Code Title Description
BC A request for examination has been filed
A85 Still pending on 85-01-01
BV The patent application has lapsed