NL7606482A - Eenkristzl van calcium-gallium-germanium granaat, alsmede substraat vervaardigd van een dergelijk eenkristzl met een epitaxiaal opgegroeide beldo- meinfilm. - Google Patents
Eenkristzl van calcium-gallium-germanium granaat, alsmede substraat vervaardigd van een dergelijk eenkristzl met een epitaxiaal opgegroeide beldo- meinfilm.Info
- Publication number
- NL7606482A NL7606482A NL7606482A NL7606482A NL7606482A NL 7606482 A NL7606482 A NL 7606482A NL 7606482 A NL7606482 A NL 7606482A NL 7606482 A NL7606482 A NL 7606482A NL 7606482 A NL7606482 A NL 7606482A
- Authority
- NL
- Netherlands
- Prior art keywords
- eenkristzl
- meinfilm
- grainate
- beldo
- germanium
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/26—Thin magnetic films, e.g. of one-domain structure characterised by the substrate or intermediate layers
- H01F10/28—Thin magnetic films, e.g. of one-domain structure characterised by the substrate or intermediate layers characterised by the composition of the substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/02—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
- C30B29/28—Complex oxides with formula A3Me5O12 wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co or Al, e.g. garnets
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
- C30B29/32—Titanates; Germanates; Molybdates; Tungstates
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S428/00—Stock material or miscellaneous articles
- Y10S428/90—Magnetic feature
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Thin Magnetic Films (AREA)
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL7606482A NL7606482A (nl) | 1976-06-16 | 1976-06-16 | Eenkristzl van calcium-gallium-germanium granaat, alsmede substraat vervaardigd van een dergelijk eenkristzl met een epitaxiaal opgegroeide beldo- meinfilm. |
GB24520/77A GB1580848A (en) | 1976-06-16 | 1977-06-13 | Calcium-gallium-germanium garnet single crystal |
CH725477A CH630963A5 (de) | 1976-06-16 | 1977-06-13 | Einkristall aus nicht-magnetischem synthetischen granatmaterial, sowie dessen verwendung als substrat zur zuechtung einer blasendomaenenschicht. |
DE2726744A DE2726744C3 (de) | 1976-06-16 | 1977-06-14 | Einkristallines Substrat aus Calcium-Gallium-Granat sowie mit diesem hergestellte magnetische Blasendomänenanordnung |
JP52070045A JPS5919912B2 (ja) | 1976-06-16 | 1977-06-15 | カルシウム−ガリウム−ゲルマニウム系ガ−ネット単結晶,ガ−ネット単結晶基体及び泡磁区装置 |
FR7718346A FR2354809A1 (fr) | 1976-06-16 | 1977-06-15 | Monocristal de grenat de calcium-gallium-germanium, ainsi que substrat forme par un tel monocristal et muni d'une couche a bulles magnetiques formee par voie d'epitaxie |
US05/877,165 US4323618A (en) | 1976-06-16 | 1978-02-13 | Single crystal of calcium-gallium germanium garnet and substrate manufactured from such a single crystal and having an epitaxially grown bubble domain film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL7606482A NL7606482A (nl) | 1976-06-16 | 1976-06-16 | Eenkristzl van calcium-gallium-germanium granaat, alsmede substraat vervaardigd van een dergelijk eenkristzl met een epitaxiaal opgegroeide beldo- meinfilm. |
Publications (1)
Publication Number | Publication Date |
---|---|
NL7606482A true NL7606482A (nl) | 1977-12-20 |
Family
ID=19826374
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL7606482A NL7606482A (nl) | 1976-06-16 | 1976-06-16 | Eenkristzl van calcium-gallium-germanium granaat, alsmede substraat vervaardigd van een dergelijk eenkristzl met een epitaxiaal opgegroeide beldo- meinfilm. |
Country Status (7)
Country | Link |
---|---|
US (1) | US4323618A (de) |
JP (1) | JPS5919912B2 (de) |
CH (1) | CH630963A5 (de) |
DE (1) | DE2726744C3 (de) |
FR (1) | FR2354809A1 (de) |
GB (1) | GB1580848A (de) |
NL (1) | NL7606482A (de) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL7607959A (nl) * | 1976-07-19 | 1978-01-23 | Philips Nv | Magnetisch beldomein materiaal. |
NL7902293A (nl) * | 1979-03-23 | 1980-09-25 | Philips Nv | Magnetische beldomein structuur en magnetische beldomeininrichting. |
US4355072A (en) | 1980-02-12 | 1982-10-19 | U.S. Philips Corporation | Magnetic hexagonal ferrite layer on a nonmagnetic hexagonal mixed crystal substrate |
NL8800155A (nl) * | 1988-01-25 | 1989-08-16 | Philips Nv | Granaat en werkwijzen voor het bereiden van een granaat. |
JPH0354198A (ja) * | 1989-07-20 | 1991-03-08 | Shin Etsu Chem Co Ltd | 酸化物ガーネット単結晶 |
TWI474380B (zh) * | 2003-05-23 | 2015-02-21 | 尼康股份有限公司 | A method of manufacturing an exposure apparatus and an element |
US7779781B2 (en) | 2003-07-31 | 2010-08-24 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
CN115991993B (zh) * | 2022-12-09 | 2024-01-26 | 广东省科学院资源利用与稀土开发研究所 | 一种防伪用钠镥镓锗石榴石基绿光荧光粉及其制备方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3429740A (en) * | 1965-09-24 | 1969-02-25 | North American Rockwell | Growing garnet on non-garnet single crystal |
US3788896A (en) * | 1970-12-28 | 1974-01-29 | North American Rockwell | Method for producing bubble domains in magnetic film-substrate structures |
US3736158A (en) * | 1971-03-19 | 1973-05-29 | G Cullen | Czochralski-grown spinel for use as epitaxial silicon substrate |
US3723599A (en) * | 1971-08-18 | 1973-03-27 | Bell Telephone Labor Inc | Technique for growth of single crystal gallium garnet |
DE2349348C2 (de) * | 1972-10-07 | 1983-02-10 | N.V. Philips' Gloeilampenfabrieken, 5621 Eindhoven | Verfahren zum Züchten einer einkristallinen, wismutdotierten Yttrium- oder Seltenerdmetall-Eisen-Granatschicht |
CA1061902A (en) | 1974-04-15 | 1979-09-04 | Paul J. Besser | Orientation-derived hard bubble suppression |
US3946372A (en) * | 1974-04-15 | 1976-03-23 | Rockwell International Corporation | Characteristic temperature-derived hard bubble suppression |
-
1976
- 1976-06-16 NL NL7606482A patent/NL7606482A/xx not_active Application Discontinuation
-
1977
- 1977-06-13 CH CH725477A patent/CH630963A5/de not_active IP Right Cessation
- 1977-06-13 GB GB24520/77A patent/GB1580848A/en not_active Expired
- 1977-06-14 DE DE2726744A patent/DE2726744C3/de not_active Expired
- 1977-06-15 JP JP52070045A patent/JPS5919912B2/ja not_active Expired
- 1977-06-15 FR FR7718346A patent/FR2354809A1/fr active Granted
-
1978
- 1978-02-13 US US05/877,165 patent/US4323618A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
CH630963A5 (de) | 1982-07-15 |
FR2354809B1 (de) | 1983-12-09 |
US4323618A (en) | 1982-04-06 |
DE2726744A1 (de) | 1977-12-29 |
DE2726744B2 (de) | 1981-04-23 |
GB1580848A (en) | 1980-12-03 |
FR2354809A1 (fr) | 1978-01-13 |
JPS531200A (en) | 1978-01-07 |
JPS5919912B2 (ja) | 1984-05-09 |
DE2726744C3 (de) | 1982-02-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
NL7707919A (nl) | Halfgeleider alsmede werkwijze ter vervaardiging daarvan. | |
NL7706540A (nl) | Vormen van kunststoffen. | |
IT1084379B (it) | Procedimento di piroscissione. | |
NL7702269A (nl) | Werkwijze ter bereiding van preparaten met pesticide-eigenschappen. | |
NL7700016A (nl) | Drager. | |
NL7712210A (nl) | Sleepboot of dergelijke. | |
NL7608901A (nl) | Werkwijze ter vervaardiging van een halfge- leiderinrichting en halfgeleiderinrichting vervaardigd door middel van een dergelijke werkwijze. | |
NL7711717A (nl) | Maaidorser. | |
NL183269C (nl) | Ritssluitingdrager. | |
NO148001C (no) | Fangkileanordning. | |
IT1087874B (it) | Insieme di ugulizzazione autoadattante. | |
NL176813C (nl) | Weergeefstelsel voorzien van lichtemitterende halfgeleiderdioden. | |
AR211177A1 (es) | Carburador. | |
NL7703069A (nl) | Transistorketen met verscheidene bronnen van vaste stroomsterkte. | |
NL7704093A (nl) | Bepaling van methadon. | |
NL7704505A (nl) | Drager. | |
NL7606482A (nl) | Eenkristzl van calcium-gallium-germanium granaat, alsmede substraat vervaardigd van een dergelijk eenkristzl met een epitaxiaal opgegroeide beldo- meinfilm. | |
NL7708613A (nl) | Werkwijze ter bereiding van wrongel. | |
NL7706817A (nl) | Telefonieschakeling op basis van tijd- en ruimte-verdeling, alsmede clntrale met een dergelijke schakeling. | |
NL7711303A (nl) | Transportinrichting of dergelijke. | |
NL7704148A (nl) | Ondergrond voor getuft tapijt en tapijt met een dergelijke ondergrond. | |
PL196355A1 (pl) | Sposob mikrobiologicznego wytwarzania mieszaniny androstadieno-1,4-dionu-3,17 i androsteno-4-dionu-3,17 | |
NL7613944A (nl) | Halfgeleiderelement en samenstel met halfgeleider. | |
NL7606625A (nl) | Koffer, alsmede werkwijze ter vervaardiging ervan. | |
NO156435C (no) | Festeanordning. |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
BV | The patent application has lapsed |