NL7604951A - Glas voor het passiveren van halfgeleider- inrichtingen. - Google Patents

Glas voor het passiveren van halfgeleider- inrichtingen.

Info

Publication number
NL7604951A
NL7604951A NL7604951A NL7604951A NL7604951A NL 7604951 A NL7604951 A NL 7604951A NL 7604951 A NL7604951 A NL 7604951A NL 7604951 A NL7604951 A NL 7604951A NL 7604951 A NL7604951 A NL 7604951A
Authority
NL
Netherlands
Prior art keywords
passiving
glass
semiconductor devices
semiconductor
devices
Prior art date
Application number
NL7604951A
Other languages
English (en)
Dutch (nl)
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Priority to NL7604951A priority Critical patent/NL7604951A/xx
Priority to US05/793,881 priority patent/US4156250A/en
Priority to CA277,712A priority patent/CA1075271A/en
Priority to GB19071/77A priority patent/GB1568156A/en
Priority to IT23302/77A priority patent/IT1085541B/it
Priority to AU24963/77A priority patent/AU508674B2/en
Priority to DE2720639A priority patent/DE2720639C2/de
Priority to SE7705357A priority patent/SE428293B/xx
Priority to JP52052153A priority patent/JPS596269B2/ja
Priority to BE177409A priority patent/BE854424A/xx
Priority to FR7714208A priority patent/FR2351065A1/fr
Publication of NL7604951A publication Critical patent/NL7604951A/xx

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6928—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides
    • H10P14/6936—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides the material containing two or more metal elements
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
    • C03C3/102—Glass compositions containing silica with 40% to 90% silica, by weight containing lead
    • C03C3/105—Glass compositions containing silica with 40% to 90% silica, by weight containing lead containing aluminium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6928—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides
    • H10P14/6929—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides the material containing aluminium, e.g. AlSiOx
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/131—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
    • H10W74/43—Encapsulations, e.g. protective coatings characterised by their materials comprising oxides, nitrides or carbides, e.g. ceramics or glasses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6329—Deposition from the gas or vapour phase using physical ablation of a target, e.g. physical vapour deposition or pulsed laser deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6342—Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
    • H10P14/69391—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal the material containing aluminium, e.g. Al2O3

Landscapes

  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Glass Compositions (AREA)
  • Formation Of Insulating Films (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Inorganic Insulating Materials (AREA)
NL7604951A 1976-05-10 1976-05-10 Glas voor het passiveren van halfgeleider- inrichtingen. NL7604951A (nl)

Priority Applications (11)

Application Number Priority Date Filing Date Title
NL7604951A NL7604951A (nl) 1976-05-10 1976-05-10 Glas voor het passiveren van halfgeleider- inrichtingen.
US05/793,881 US4156250A (en) 1976-05-10 1977-05-04 Glass for the passivation of semiconductor devices
CA277,712A CA1075271A (en) 1976-05-10 1977-05-04 Glass for the passivation of semiconductor devices
GB19071/77A GB1568156A (en) 1976-05-10 1977-05-06 Glass compositions
IT23302/77A IT1085541B (it) 1976-05-10 1977-05-06 Vetro per la passivazione di dispositivi semiconduttori
AU24963/77A AU508674B2 (en) 1976-05-10 1977-05-06 Glass forthe Passivation of Semiconductor Devices
DE2720639A DE2720639C2 (de) 1976-05-10 1977-05-07 Glas, verwendbar zur Passivierung von Halbleitervorrichtungen und Verfahren zu seiner Herstellung
SE7705357A SE428293B (sv) 1976-05-10 1977-05-09 Glas, innehallande sio?712, pbo och al?712o?713 samt anvendning av detsamma som en passiviserande glasbeleggning for halvledaranordning
JP52052153A JPS596269B2 (ja) 1976-05-10 1977-05-09 ガラスおよびその製造方法
BE177409A BE854424A (fr) 1976-05-10 1977-05-09 Verre pour la passivation de dispositifs semoconducteurs
FR7714208A FR2351065A1 (fr) 1976-05-10 1977-05-10 Verre pour la passivation de dispositifs semiconducteurs

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7604951A NL7604951A (nl) 1976-05-10 1976-05-10 Glas voor het passiveren van halfgeleider- inrichtingen.

Publications (1)

Publication Number Publication Date
NL7604951A true NL7604951A (nl) 1977-11-14

Family

ID=19826155

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7604951A NL7604951A (nl) 1976-05-10 1976-05-10 Glas voor het passiveren van halfgeleider- inrichtingen.

Country Status (11)

Country Link
US (1) US4156250A (enExample)
JP (1) JPS596269B2 (enExample)
AU (1) AU508674B2 (enExample)
BE (1) BE854424A (enExample)
CA (1) CA1075271A (enExample)
DE (1) DE2720639C2 (enExample)
FR (1) FR2351065A1 (enExample)
GB (1) GB1568156A (enExample)
IT (1) IT1085541B (enExample)
NL (1) NL7604951A (enExample)
SE (1) SE428293B (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2410366A1 (fr) * 1977-11-29 1979-06-22 Radiotechnique Compelec Transistor de type mesa et procede de realisation de ce transistor
US4168960A (en) * 1978-04-18 1979-09-25 Westinghouse Electric Corp. Method of making a glass encapsulated diode
JPS55133569A (en) * 1979-04-06 1980-10-17 Hitachi Ltd Semiconductor device
JPS55160437A (en) * 1979-05-31 1980-12-13 Hitachi Ltd Semiconductor device
US4490737A (en) * 1981-03-16 1984-12-25 Fairchild Camera & Instrument Corp. Smooth glass insulating film over interconnects on an integrated circuit
FR2542148B1 (fr) * 1983-03-01 1986-12-05 Telemecanique Electrique Circuit de commande d'un dispositif a semi-conducteur sensible du type thyristor ou triac, avec impedance d'assistance a l'auto-allumage et son application a la realisation d'un montage commutateur associant un thyristor sensible a un thyristor moins sensible
DE3331298A1 (de) * 1983-08-31 1985-03-14 Brown, Boveri & Cie Ag, 6800 Mannheim Leistungsthyristor auf einem substrat
US4946716A (en) * 1985-05-31 1990-08-07 Tektronix, Inc. Method of thinning a silicon wafer using a reinforcing material
KR970000416B1 (ko) * 1985-05-31 1997-01-09 사이언티픽 이매징 테크놀로지시 이코포레이티드 규소웨이퍼 보강재 및 보강방법
CN1298029C (zh) * 2003-03-26 2007-01-31 中国电子科技集团公司第五十五研究所 射频台式硅二极管电泳沉积玻璃钝化共形膜制备方法
US20230382785A1 (en) * 2020-10-13 2023-11-30 Nippon Electric Glass Co., Ltd. Semiconductor element coating glass and semiconductor element coating material using same

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3241010A (en) * 1962-03-23 1966-03-15 Texas Instruments Inc Semiconductor junction passivation
US3542572A (en) * 1968-06-24 1970-11-24 Corning Glass Works Germania-silica glasses
US3801878A (en) * 1971-03-09 1974-04-02 Innotech Corp Glass switching device using an ion impermeable glass active layer
US4073654A (en) * 1975-12-15 1978-02-14 Corning Glass Works Optical articles prepared from hydrated glasses

Also Published As

Publication number Publication date
DE2720639C2 (de) 1984-01-19
JPS52136211A (en) 1977-11-14
AU508674B2 (en) 1980-03-27
JPS596269B2 (ja) 1984-02-09
DE2720639A1 (de) 1977-12-01
SE7705357L (sv) 1977-11-11
CA1075271A (en) 1980-04-08
US4156250A (en) 1979-05-22
BE854424A (fr) 1977-11-09
FR2351065B1 (enExample) 1980-03-28
IT1085541B (it) 1985-05-28
GB1568156A (en) 1980-05-29
FR2351065A1 (fr) 1977-12-09
AU2496377A (en) 1978-11-09
SE428293B (sv) 1983-06-20

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Legal Events

Date Code Title Description
BV The patent application has lapsed