NL7515233A - Diode-laser. - Google Patents

Diode-laser.

Info

Publication number
NL7515233A
NL7515233A NL7515233A NL7515233A NL7515233A NL 7515233 A NL7515233 A NL 7515233A NL 7515233 A NL7515233 A NL 7515233A NL 7515233 A NL7515233 A NL 7515233A NL 7515233 A NL7515233 A NL 7515233A
Authority
NL
Netherlands
Prior art keywords
diode laser
diode
laser
Prior art date
Application number
NL7515233A
Other languages
English (en)
Dutch (nl)
Original Assignee
Xerox Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Xerox Corp filed Critical Xerox Corp
Publication of NL7515233A publication Critical patent/NL7515233A/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/185—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL]
    • H01S5/187—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL] using Bragg reflection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/42—Arrays of surface emitting lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1071—Ring-lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4056—Edge-emitting structures emitting light in more than one direction

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
NL7515233A 1975-03-26 1975-12-31 Diode-laser. NL7515233A (nl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/562,279 US3969686A (en) 1975-03-26 1975-03-26 Beam collimation using multiple coupled elements

Publications (1)

Publication Number Publication Date
NL7515233A true NL7515233A (nl) 1976-09-28

Family

ID=24245591

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7515233A NL7515233A (nl) 1975-03-26 1975-12-31 Diode-laser.

Country Status (7)

Country Link
US (1) US3969686A (de)
JP (1) JPS5856991B2 (de)
CA (1) CA1057839A (de)
DE (1) DE2556850C2 (de)
FR (1) FR2305869A1 (de)
GB (1) GB1521726A (de)
NL (1) NL7515233A (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4293827A (en) * 1979-09-14 1981-10-06 Jersey Nuclear-Avco Isotopes, Inc. Multiwavelength dye laser
NL8104068A (nl) * 1981-09-02 1983-04-05 Philips Nv Halfgeleiderlaser.
US4751707A (en) * 1986-07-03 1988-06-14 Mcdonnell Douglas Corporation Laser diode array exhibiting transverse lasing
GB2203891A (en) * 1987-04-21 1988-10-26 Plessey Co Plc Semiconductor diode laser array
US4799223A (en) * 1987-08-06 1989-01-17 Xerox Corporation Split contact phased array lasers
DE3728568A1 (de) * 1987-08-27 1989-03-16 Telefunken Electronic Gmbh Halbleiterlaseranordnung
DE3802404A1 (de) * 1988-01-28 1989-08-03 Licentia Gmbh Halbleiterlaser
JPH0620154B2 (ja) * 1988-03-05 1994-03-16 鐘淵化学工業株式会社 半導体装置の製法
CA1318722C (en) * 1988-08-09 1993-06-01 Donald Barry Carlin Surface emitting lasers with combined output
US5231642A (en) * 1992-05-08 1993-07-27 Spectra Diode Laboratories, Inc. Semiconductor ring and folded cavity lasers
JP3503386B2 (ja) * 1996-01-26 2004-03-02 セイコーエプソン株式会社 インクジェット式記録ヘッド及びその製造方法
US6858596B2 (en) * 2000-08-05 2005-02-22 Smithkline Beecham Corporation Formulation containing anti-inflammatory androstane derivative
DE102007011124A1 (de) * 2007-01-25 2008-07-31 Osram Opto Semiconductors Gmbh Organischer Halbleiterlaser und Verfahren zu dessen Herstellung

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3248671A (en) * 1962-11-30 1966-04-26 Ibm Lasers utilizing internal reflection techniques
US3760297A (en) * 1972-01-20 1973-09-18 Int Standard Electric Corp Laser to optical fiber coupling
US3868589A (en) * 1972-10-10 1975-02-25 Univ California Thin film devices and lasers

Also Published As

Publication number Publication date
CA1057839A (en) 1979-07-03
DE2556850A1 (de) 1976-10-07
JPS51114888A (en) 1976-10-08
US3969686A (en) 1976-07-13
FR2305869B1 (de) 1983-04-22
JPS5856991B2 (ja) 1983-12-17
FR2305869A1 (fr) 1976-10-22
GB1521726A (en) 1978-08-16
DE2556850C2 (de) 1985-05-23

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Legal Events

Date Code Title Description
BV The patent application has lapsed