NL7507116A - Werkwijze voor het egaliseren van een oppervlak met behulp van een fotoresistief masker en in- richting voorzien van een dergelijk oppervlak. - Google Patents

Werkwijze voor het egaliseren van een oppervlak met behulp van een fotoresistief masker en in- richting voorzien van een dergelijk oppervlak.

Info

Publication number
NL7507116A
NL7507116A NL7507116A NL7507116A NL7507116A NL 7507116 A NL7507116 A NL 7507116A NL 7507116 A NL7507116 A NL 7507116A NL 7507116 A NL7507116 A NL 7507116A NL 7507116 A NL7507116 A NL 7507116A
Authority
NL
Netherlands
Prior art keywords
furnishing
leveling
facilities
procedure
photoresistive mask
Prior art date
Application number
NL7507116A
Other languages
English (en)
Dutch (nl)
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Publication of NL7507116A publication Critical patent/NL7507116A/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • H01L21/31055—Planarisation of the insulating layers involving a dielectric removal step the removal being a chemical etching step, e.g. dry etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • H01L21/31055—Planarisation of the insulating layers involving a dielectric removal step the removal being a chemical etching step, e.g. dry etching
    • H01L21/31056—Planarisation of the insulating layers involving a dielectric removal step the removal being a chemical etching step, e.g. dry etching the removal being a selective chemical etching step, e.g. selective dry etching through a mask
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31058—After-treatment of organic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/32—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
    • H01L21/76229—Concurrent filling of a plurality of trenches having a different trench shape or dimension, e.g. rectangular and V-shaped trenches, wide and narrow trenches, shallow and deep trenches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/051—Etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/105—Masks, metal
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/131—Reactive ion etching rie

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Ceramic Engineering (AREA)
  • Weting (AREA)
  • Element Separation (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • ing And Chemical Polishing (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
NL7507116A 1974-06-17 1975-06-13 Werkwijze voor het egaliseren van een oppervlak met behulp van een fotoresistief masker en in- richting voorzien van een dergelijk oppervlak. NL7507116A (nl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/480,086 US3976524A (en) 1974-06-17 1974-06-17 Planarization of integrated circuit surfaces through selective photoresist masking

Publications (1)

Publication Number Publication Date
NL7507116A true NL7507116A (nl) 1975-12-19

Family

ID=23906628

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7507116A NL7507116A (nl) 1974-06-17 1975-06-13 Werkwijze voor het egaliseren van een oppervlak met behulp van een fotoresistief masker en in- richting voorzien van een dergelijk oppervlak.

Country Status (13)

Country Link
US (1) US3976524A (zh)
JP (1) JPS516677A (zh)
BR (1) BR7503802A (zh)
CA (1) CA1030666A (zh)
CH (1) CH578252A5 (zh)
DK (1) DK138770B (zh)
ES (1) ES438482A1 (zh)
FR (1) FR2275026A1 (zh)
GB (1) GB1452717A (zh)
IT (1) IT1037479B (zh)
NL (1) NL7507116A (zh)
SE (1) SE397436B (zh)
ZA (1) ZA752593B (zh)

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JPS5642377A (en) * 1979-09-14 1981-04-20 Fujitsu Ltd Ultraviolet ray erasable type rewritable read-only memory
US4318751A (en) * 1980-03-13 1982-03-09 International Business Machines Corporation Self-aligned process for providing an improved high performance bipolar transistor
US4307179A (en) * 1980-07-03 1981-12-22 International Business Machines Corporation Planar metal interconnection system and process
US4389281A (en) * 1980-12-16 1983-06-21 International Business Machines Corporation Method of planarizing silicon dioxide in semiconductor devices
AU549226B2 (en) * 1981-09-29 1986-01-23 Dai Nippon Insatsu Kabushiki Kaisha Embossing plastic sheet
US4576900A (en) * 1981-10-09 1986-03-18 Amdahl Corporation Integrated circuit multilevel interconnect system and method
US4396458A (en) * 1981-12-21 1983-08-02 International Business Machines Corporation Method for forming planar metal/insulator structures
US4385975A (en) * 1981-12-30 1983-05-31 International Business Machines Corp. Method of forming wide, deep dielectric filled isolation trenches in the surface of a silicon semiconductor substrate
US4427713A (en) 1983-01-17 1984-01-24 Rca Corporation Planarization technique
US4510173A (en) * 1983-04-25 1985-04-09 Kabushiki Kaisha Toshiba Method for forming flattened film
US4541169A (en) * 1984-10-29 1985-09-17 International Business Machines Corporation Method for making studs for interconnecting metallization layers at different levels in a semiconductor chip
US4662064A (en) * 1985-08-05 1987-05-05 Rca Corporation Method of forming multi-level metallization
US4665007A (en) * 1985-08-19 1987-05-12 International Business Machines Corporation Planarization process for organic filling of deep trenches
US4672023A (en) * 1985-10-21 1987-06-09 Avantek, Inc. Method for planarizing wafers
US4721689A (en) * 1986-08-28 1988-01-26 International Business Machines Corporation Method for simultaneously forming an interconnection level and via studs
JPS6377122A (ja) * 1986-09-19 1988-04-07 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
NL8701717A (nl) * 1987-07-21 1989-02-16 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting met een geplanariseerde opbouw.
US4839311A (en) * 1987-08-14 1989-06-13 National Semiconductor Corporation Etch back detection
JP2820187B2 (ja) * 1992-04-16 1998-11-05 三星電子 株式会社 半導体装置の製造方法
US5635428A (en) * 1994-10-25 1997-06-03 Texas Instruments Incorporated Global planarization using a polyimide block
US5872060A (en) * 1995-11-02 1999-02-16 Texas Instruments Incorporated Semiconductor device manufacturing method
US5780346A (en) 1996-12-31 1998-07-14 Intel Corporation N2 O nitrided-oxide trench sidewalls and method of making isolation structure
US6063702A (en) * 1997-01-27 2000-05-16 Chartered Semiconductor Manufacturing, Ltd. Global planarization method for inter level dielectric layers using IDL blocks
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US5876879A (en) * 1997-05-29 1999-03-02 International Business Machines Corporation Oxide layer patterned by vapor phase etching
US5838055A (en) * 1997-05-29 1998-11-17 International Business Machines Corporation Trench sidewall patterned by vapor phase etching
US6074951A (en) * 1997-05-29 2000-06-13 International Business Machines Corporation Vapor phase etching of oxide masked by resist or masking material
US5924623A (en) * 1997-06-30 1999-07-20 Honeywell Inc. Diffusion patterned C4 bump pads
AT410043B (de) * 1997-09-30 2003-01-27 Sez Ag Verfahren zum planarisieren von halbleitersubstraten
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Also Published As

Publication number Publication date
DK138770B (da) 1978-10-23
FR2275026A1 (fr) 1976-01-09
CA1030666A (en) 1978-05-02
US3976524A (en) 1976-08-24
ZA752593B (en) 1976-11-24
CH578252A5 (zh) 1976-07-30
JPS5342674B2 (zh) 1978-11-14
GB1452717A (en) 1976-10-13
DE2525224B2 (de) 1977-01-27
FR2275026B1 (zh) 1977-07-08
ES438482A1 (es) 1977-02-01
DE2525224A1 (de) 1976-01-02
SE397436B (sv) 1977-10-31
SE7506314L (sv) 1975-12-18
DK270875A (zh) 1975-12-18
BR7503802A (pt) 1976-07-06
DK138770C (zh) 1979-04-02
AU8058775A (en) 1976-11-04
JPS516677A (en) 1976-01-20
IT1037479B (it) 1979-11-10

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