NL7406859A - - Google Patents

Info

Publication number
NL7406859A
NL7406859A NL7406859A NL7406859A NL7406859A NL 7406859 A NL7406859 A NL 7406859A NL 7406859 A NL7406859 A NL 7406859A NL 7406859 A NL7406859 A NL 7406859A NL 7406859 A NL7406859 A NL 7406859A
Authority
NL
Netherlands
Application number
NL7406859A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL7406859A publication Critical patent/NL7406859A/xx

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00Thyristors
NL7406859A 1973-05-29 1974-05-22 NL7406859A (cs)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US36466473A 1973-05-29 1973-05-29

Publications (1)

Publication Number Publication Date
NL7406859A true NL7406859A (cs) 1974-12-03

Family

ID=23435519

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7406859A NL7406859A (cs) 1973-05-29 1974-05-22

Country Status (10)

Country Link
US (1) US4062032A (cs)
JP (1) JPS5033777A (cs)
AU (1) AU6928374A (cs)
BE (1) BE815638A (cs)
BR (1) BR7404284D0 (cs)
DE (1) DE2425364A1 (cs)
FR (1) FR2232086B3 (cs)
IT (1) IT1010445B (cs)
NL (1) NL7406859A (cs)
SE (1) SE7406349L (cs)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4214255A (en) * 1977-02-07 1980-07-22 Rca Corporation Gate turn-off triac with dual low conductivity regions contacting central gate region
JPS5912026B2 (ja) * 1977-10-14 1984-03-19 株式会社日立製作所 サイリスタ
US4750025A (en) * 1981-12-04 1988-06-07 American Telephone And Telegraph Company, At&T Bell Laboratories Depletion stop transistor
JPS6115366A (ja) * 1984-06-30 1986-01-23 Mitsuo Kusano ゲ−トタ−ンオフサイリスタ及びその製造方法
US4757025A (en) * 1985-03-25 1988-07-12 Motorola Inc. Method of making gate turn off switch with anode short and buried base
US4717940A (en) * 1986-03-11 1988-01-05 Kabushiki Kaisha Toshiba MIS controlled gate turn-off thyristor
US4961100A (en) * 1988-06-20 1990-10-02 General Electric Company Bidirectional field effect semiconductor device and circuit
US5306930A (en) * 1992-12-14 1994-04-26 North Carolina State University At Raleigh Emitter switched thyristor with buried dielectric layer

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3146135A (en) * 1959-05-11 1964-08-25 Clevite Corp Four layer semiconductive device
US3337783A (en) * 1964-01-16 1967-08-22 Westinghouse Electric Corp Shorted emitter controlled rectifier with improved turn-off gain
US3370209A (en) * 1964-08-31 1968-02-20 Gen Electric Power bulk breakdown semiconductor devices
US3538401A (en) * 1968-04-11 1970-11-03 Westinghouse Electric Corp Drift field thyristor
US3566206A (en) * 1968-12-20 1971-02-23 Bell Telephone Labor Inc Negative resistance semiconductor device having a pinipin zone structure
US3798079A (en) * 1972-06-05 1974-03-19 Westinghouse Electric Corp Triple diffused high voltage transistor

Also Published As

Publication number Publication date
AU6928374A (en) 1975-11-27
FR2232086B3 (cs) 1977-03-18
JPS5033777A (cs) 1975-04-01
US4062032A (en) 1977-12-06
FR2232086A1 (cs) 1974-12-27
BE815638A (fr) 1974-09-16
BR7404284D0 (pt) 1975-01-07
IT1010445B (it) 1977-01-10
DE2425364A1 (de) 1975-01-02
SE7406349L (cs) 1974-12-02

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